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    2N333 Search Results

    2N333 Datasheets (156)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N333
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.54KB 5
    2N333
    Advanced Semiconductor Silicon Transistors Scan PDF 814.49KB 5
    2N333
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N333
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 69.42KB 1
    2N333
    Unknown GE Transistor Specifications Scan PDF 20.16KB 1
    2N333
    Unknown Transistor Replacements Scan PDF 62.12KB 1
    2N333
    Unknown GE Transistor Specifications Scan PDF 42.75KB 1
    2N333
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.63KB 1
    2N333
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 38.69KB 1
    2N333
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 38.69KB 1
    2N333
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 97.88KB 1
    2N333
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 106.46KB 1
    2N333
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.8KB 1
    2N333
    Unknown Vintage Transistor Datasheets Scan PDF 49.16KB 1
    2N333
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.17KB 1
    2N333
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 45.73KB 1
    2N333
    Semico UHF Amplifiers / NPN General Purpose Medium Speed Amplifiers Scan PDF 182.56KB 1
    2N3330
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 135.58KB 1
    2N3330
    Motorola Power Transistor Selection Guide Scan PDF 325.11KB 6
    2N3330
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 42.65KB 1
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    2N333 Price and Stock

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    TDK Corporation B32922N3334M289

    Capacitor: polypropylene; X2; 330nF; 305VAC; 18x14x8mm; THT; ±20%
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    TME B32922N3334M289 5,840
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    Avnet Americas B32922N3334M289 Ammo Pack 5,840
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    TDK Corporation B32922N3334M189

    Capacitor: polypropylene; X2; 330nF; 305VAC; 18x14x8mm; THT; ±20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME B32922N3334M189 6,000
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    Avnet Americas B32922N3334M189 Tape & Reel 6,000
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    TDK Corporation B32922N3334K189

    Capacitor: polypropylene; X2; 330nF; 305VAC; 18x14x8mm; THT; ±10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME B32922N3334K189 6,000
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    Avnet Americas B32922N3334K189 Tape & Reel 6,000
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    TDK Corporation B32922N3334K289

    Capacitor: polypropylene; X2; 330nF; 305VAC; 18x14x8mm; THT; ±10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME B32922N3334K289 5,840
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    Avnet Americas B32922N3334K289 Ammo Pack 5,840
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    Microchip Technology Inc 2N333

    - Bulk (Alt: 2N333)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N333 Bulk 40 Weeks 100
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    Mouser Electronics 2N333
    • 1 $68.54
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    Newark 2N333 Bulk 500
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    Microchip Technology Inc 2N333 40 Weeks
    • 1 $68.54
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    Onlinecomponents.com 2N333
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    Master Electronics 2N333
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    2N333 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3330

    Abstract: 2N3332 2N3331 2n3329
    Contextual Info: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS


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    2n33292n33322k33292n3330+22n333i2n3331 PDF

    2N3329

    Abstract: 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN
    Contextual Info: S Siliconix P erform ance C u rves PC Se e Section 5 2N3330 • Small-Signal Amplifiers ■ Analog M u ltip liers ■ M odulators b e n e f it s Ease of Am plifier Design I q SS & Gfs Closely Specified 2N3331 ♦ABSO LUTE M A X IM U M R A TIN G S 25°C 2N3329


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    2n33292n33302n33312n3332+42n2843analog multipliers2n26082n2608jan PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan
    2n329a2n3322n3332n334+162n3352n3362n3372n3382n3392n3402n35682n35692n7022n24062n25392n24072n35652n36382n14702n2224 PDF

    Contextual Info: 2N3339 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)20


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    2n3339freq400m PDF

    2N3330

    Abstract: 2N2498 2N3332 2N2500 2N3329 2N3331 JANTX 2H332 2N2497 2N3330 JANTX 2K333
    Contextual Info: I INCH-POUND ! MIL-S-19 500/37 8B 21 June 1990 SUPERSEDING-Mil-S-19500/378A 18 Marrh 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES ZHZ497 THROUGH ZHZ50Q, 2N3329 THROUGH 2N3332, JANTX This s p ecifica tio n is approved for use by a ll Depart­


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    mil-s-19500/378bmil-s-19500/378a2n24972n2500+92n33292n3332mil-s-195002n33302n24982n3331 jantx2h3322n3330 jantx2k333 PDF

    UC451

    Contextual Info: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20


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    2n26082n26092n33282n3329+72n33302n33312n3332kk3820kk4342kk4343uc451 PDF

    2N5021

    Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
    Contextual Info: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S


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    2n26082n26092n33282n3329+122n33302n33312n3332kk3820kk43422n25002n50212n52652n52662n52682n54602n5462 PDF

    2N3330

    Abstract: JFET 2N3330
    Contextual Info: M OT O R O L A SC X S T R S /R F 12E D 1 b3b7g5t| OOflbbOb 2N3330 0 1 ' CASE 20-03, STYLE 5 TO-72 TO-206AF MAXIMUM RATINGS Symbol Valus Unit Vdg 20 Vdc Vgsr 20 Vdc Gate Current Ig 10 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25CC Pd 300 1.7


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    2n3330o-206af2n5460jfet 2n3330 PDF

    2N5266

    Contextual Info: ÄTTÄ[L LOW P O W E R FIELD E FFE C T T R A N S IS T O R S ¡[L ÄtMPOJFDIlKi Type Number Case Style (T O - Geometry BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3


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    2n26082n26092n33282n3329+72n33302n33312n3332kk3820kk4342kk43432n5266 PDF

    2n5268

    Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
    Contextual Info: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72


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    2n26082n26092n33282n3329+132n33302n33312n3332kk3820kk4342kk43432n52682n52672n5265kk43602n5021fp22 to922n5266 PDF

    Contextual Info: 2N3335 Transistors Dual P-Channel JFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)40m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition)10 V(GS)off Min. (V).30 I(DSS) Max. (A)1.0m


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    2n3335 PDF

    2N702

    Abstract: 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A
    Contextual Info: J325835_4 A D V A N C E D S E M I C O N D U C T O R 82 D n n n ^ Q SILICON ADVANCED T R A F ^ IST O R S 62 SEMICONDUCTOR P d @ T c =25°C POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A


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    2n329a2n3322n3332n334+162n3352n3362n3372n3382n3392n3402n7022n35652n35692n15062n10692n13892n36452n36442n35662n2405a PDF

    2n333

    Contextual Info: TYPE 2N333 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U LL E T IN NO. DL-S 591036, M AR C H 1959 Beta From 18 to 40 Specifically designed for high gain at high temperatures mcchanical data Welded case with glass-to-metal hermetic seal between case and leads. Ln it weight is approximately


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    2n333 PDF

    2N333

    Contextual Info: 2N333 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N333 Availability Online Store Diodes


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    2n333stv3208lm3909nlm3909 PDF

    Contextual Info: 2N3336 Transistors Dual P-Channel JFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)40m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition)10 V(GS)off Min. (V).30 I(DSS) Max. (A)1.0m


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    2n3336 PDF

    2N333

    Abstract: ScansUX7
    Contextual Info: TYPE 2N333 N-P-N G R O W N -JU N C TIO N SILICON TRANSISTOR B U L L E T I N N O . D L -S 5 9 1 0 3 6 , M A R C H 1960 Bata From 18 to 40 Specifically designed for high gain at high temperatures •Mchanleal data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately


    OCR Scan
    2n333scansux7 PDF

    Contextual Info: 2N3338 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)20


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    2n3338freq400m PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    mrf5812sk163bfg480wnb b6 smd transistor+62sk508smd transistor n36bf998tef6860hl3sk290baw 92 PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    motorola transistor smd marking codeswalkie-talkie transceiver diagrambfm505bf256b spice model+62sk163uaf3000bgo807cfet marking code 365marking code m2 sot23sot56 PDF

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    2n9972sc982tmmmbt100mmbt200+13mmbt3642mpss545bc8172n261 rca2n301g2n2572n1852n222 motoroladiode s2m2n2772n2442n2432n332a PDF

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan
    17a-0105a-01gain-200mrf502+14bfx89bfy902n51792n2857mrf904mrf914high gain pnp rf transistor2n49572n3866 motorola2n2857 motorolamotorola 2n5179motorola european master selection2n4958y parameters of transistors PDF

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    17a-0105a-01gain-200mrf502+15bfx89bfy902n51792n2857mrf904mrf914mrf9652n5109 motorolamotorola 2n5179high gain pnp rf transistorbfy90 motorolamrf5862n6603 transistormrf542rf 2n3866 PDF

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    qml-9500-191n1124a1n37681n3821a+161n4562b1n4565a1n5819-11n58221n67611n6761-1cczl2n6193u3microsemi 1n6761-1transistor 2n40331n1614 diodes1n6642ub2n2222a cdwr1n1742am19500/483transistor 2n3251 PDF