BSX46 Search Results

BSX46

Contextual Info: BSX46 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

Transistor BSX 47-10

Abstract: Transistor BSX 45-10 7CW Transistors S1553 7CW 02 Q60218-X45-V6 BSX 45-10 BSX45 BSX47 Transistor NF 45-10
Contextual Info: IS I E G 2SC D • öSBSfciQS DDQ4ÖQ7 i NPN Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~SIEMENS AKTIENGESELLSCHAF BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

Contextual Info: BSX46 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

BSX47

Contextual Info: BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series types are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications.

bsx47

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

BSX45

Abstract: BSX46 BSX47
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: BSX46 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

BSX46

Abstract: BSX45 BSX47
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

bsx46

Abstract: BSX45 bsx45-16 BSX46-10 bsx4616 bsx47 Transistor BSX45 BSX46-16 transistor BSX47-10 transistor BSX47
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • General industrial applications.

bsx46

Abstract: bsx45
Contextual Info: 3GE D • 7 ^5 ^ 3 7 ooaiobs 3 ■ /IT SGS-THOMSON ^ 7# . S G BSX45 BSX46 S-THOMSON MEDIUM POWER AMPLIFIERS DESCRIPTION The BSX45 and BSX46 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in medium power general industrial ap­

2U 37 diode

Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22

BSX45

Abstract: BSX46 BSX47
Contextual Info: Data Sheet H BSX45, -10, -16 BSX46, -10, -16 BSX47, -10, TM C od i 1i mt tru aV f lll V NPN SILICON TRANSISTORS S e m ic o n d u c to r C orp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors

BSX46-16

Abstract: BSX46 BSX45 BSX45-10 BSX46-10 BSX47 Transistor BSX45 BSX45-16 BSX47-10 bsx4616
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN medium power transistors

Transistor BSX 47-10

Abstract: Transistor BSX 46-10 K2175
Contextual Info: SIEG 2SC D • öSBSfciQS DDQ4ÖQ7 ! N P N Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~ S I E M E N S AKTIE NG ESELLSCHA F BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

bsy85

Abstract: BSW54 BSW65 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B BSW61
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S >• TYPE NO. OC < -1 o a. H FE V C E S A T f T min Cob C O M PLE­ max max M EN TA R Y (MHz) (pF) TYPE CASE Pd (mW) 'c (A ) V C EO (V ) min 0.8 0.8 0.8 0.8 0.8 1 40 30 30 40 40 80 100 40 100

BC109 MOTOROLA

Abstract: N3053 2N2219 MOTOROLA 2N3019 motorola 2n2484 complementary bc140 bcy59 motorola 2N2222A motorola BC107 2N1711 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

TT 46 N 16 LOF

Abstract: Transistor BSX 45-10 Transistor BSX 47-10 Transistor BSX 28 Q60218-X45-V10 bsx 46-16 BSX45 Q60218-X45-V16 Transistor BSX45 Q60218-X45-V6
Contextual Info: BSX 45, BSX 46, BSX 47 NPN Transistor for AF am plifier and switching applications BSX 45, BSX 46,and BSX 47 are epitaxial NPN silicon Planartransistors in a case 5 C 3 DIN 41873 TO -39 . Their collectors are electrically connected to their cases. The transistors are particularly suitable for AF amplifiers and AF switching applications

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17