BSX47 Search Results

BSX47-10

Abstract: equivalent of transistor bsx47-10
Contextual Info: BSX47-10 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

BSX47

Contextual Info: BSX47 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

Transistor BSX 47-10

Abstract: Transistor BSX 45-10 7CW Transistors S1553 7CW 02 Q60218-X45-V6 BSX 45-10 BSX45 BSX47 Transistor NF 45-10
Contextual Info: IS I E G 2SC D • öSBSfciQS DDQ4ÖQ7 i NPN Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~SIEMENS AKTIENGESELLSCHAF BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

BSX47

Contextual Info: BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series types are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications.

bsx47

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: BSX47 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BSX47-10 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

BSX47-10

Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 120.0 V NO. BSX47-10 Voltage, Collector to Emitter (VCE) 80.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 7.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)

BSX45

Abstract: BSX46 BSX47
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

BSX46

Abstract: BSX45 BSX47
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

bsx46

Abstract: BSX45 bsx45-16 BSX46-10 bsx4616 bsx47 Transistor BSX45 BSX46-16 transistor BSX47-10 transistor BSX47
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • General industrial applications.

Contextual Info: BSX47-10 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

BSX45

Abstract: BSX46 BSX47
Contextual Info: Data Sheet H BSX45, -10, -16 BSX46, -10, -16 BSX47, -10, TM C od i 1i mt tru aV f lll V NPN SILICON TRANSISTORS S e m ic o n d u c to r C orp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors

BSX46-16

Abstract: BSX46 BSX45 BSX45-10 BSX46-10 BSX47 Transistor BSX45 BSX45-16 BSX47-10 bsx4616
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN medium power transistors

Contextual Info: BSX47 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

BSX45

Abstract: BSX46 BSX47
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS BSX45, BSX46 BSX47 TO-39 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

bsy85

Abstract: BSW54 BSW65 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B BSW61
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S >• TYPE NO. OC < -1 o a. H FE V C E S A T f T min Cob C O M PLE­ max max M EN TA R Y (MHz) (pF) TYPE CASE Pd (mW) 'c (A ) V C EO (V ) min 0.8 0.8 0.8 0.8 0.8 1 40 30 30 40 40 80 100 40 100

BC109 MOTOROLA

Abstract: N3053 2N2219 MOTOROLA 2N3019 motorola 2n2484 complementary bc140 bcy59 motorola 2N2222A motorola BC107 2N1711 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

TT 46 N 16 LOF

Abstract: Transistor BSX 45-10 Transistor BSX 47-10 Transistor BSX 28 Q60218-X45-V10 bsx 46-16 BSX45 Q60218-X45-V16 Transistor BSX45 Q60218-X45-V6
Contextual Info: BSX 45, BSX 46, BSX 47 NPN Transistor for AF am plifier and switching applications BSX 45, BSX 46,and BSX 47 are epitaxial NPN silicon Planartransistors in a case 5 C 3 DIN 41873 TO -39 . Their collectors are electrically connected to their cases. The transistors are particularly suitable for AF amplifiers and AF switching applications

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE