BC109 Search Results

150M

Abstract: BC109CSM
Contextual Info: BC109CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BC107 pin configuration

Abstract: BC109 characteristic CDIL BC107 BC109 pin configuration DATASHEET Transistor BC107 Transistor BC107 BC109 BC107A BC107 transistor BC109
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION

BC107

Abstract: bc109 BC107-BC108-BC109 BC108 bc109 equivalent BC107 equivalent BC108-BC109 BC107 equivalent transistors BC107 DATASHEET bc108 equivalent
Contextual Info: BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television

ic 8123

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BC109CSM • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

bc109c

Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
Contextual Info: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: •er | « BC109 SEMICONDUCTOR FORWARD EflEBNAUONAL ELECTRONICS LID. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T a i r i F ^ r Symbol R ating C h m c te ristk 30 Collector-Base Voltage Vcbo Collector-Emitter Voltage

Contextual Info: BC109PK Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: BC109C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BC107-BC108-BC109

Abstract: BC108-BC109 BC107 Tr bc107 bc109 gain bc109 bc108 TO-92
Contextual Info: SGS-THOMSON IMDœisillLICTIËiiMÛS BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BC109CSM • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: BC109CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BC107 characteristic

Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage

Contextual Info: BC109A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC109B Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n2222 h 331 transistors

Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300

bc1782

Contextual Info: BC177 to 179 7 V _ A.F. SILICON PLANAR EPITAXIAL TRANSISTORS Genera! purpose P-N-P transistors in TO -18 m etal package w ith the co lle cto r connected to the case. C om plem entary types fo r the BC107, BC108 and BC109. Q U IC K R E F E R E N C E D A T A

bc109

Abstract: bc549 BC549 sot23 BC109 sot23 2N5087 2N5088 BCF32 BC109 TO-92 BC849 BC559
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS LOW-NOISE TRANSISTORS OVERVIEW Small-signal transistors NPN leaded surface-mount TO -18 TO-92 SOT23 BC109 BC549/550 BC849/850 SOT323 PMST5088/89 BCY57

150M

Abstract: BC109DCSM
Contextual Info: BC109DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BC109

Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.

Contextual Info: BC107, A, B, C thru BC109, A, B, C MAXIMUM RATINGS Rating Symbol BC BC BC 107 108 109 Unit C o lle c to r-E m itte r V o lta g e VCEO 45 25 25 Vdc C o lle c to r-B a s e V o lta g e VCBO 50 30 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 5 5 CASE 22-03, STYLE 1

bc108b

Abstract: bc109c bc107 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC109 BC107B
Contextual Info: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM • Dual Silicon Planar NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available