H22E4020IR
Abstract: infrared led receiver infrared receiver led FDE4020IR infrared circuit infrared transistor 850 nm LED high power infrared led TR11
Contextual Info: The Optoelectronic Manufacturing Corporation UK Ltd Candela House, Cardrew Industrial Estate, Redruth, Cornwall, TR11 5ER Tel: 01209 215424 Fax: 01209 215197 H22E4020IR Infrared 850nm Emitter Electrically isolated plastic cap package. High Radiant Output for Fibre Optic Applications.
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h22e4020ir850nmfde4020ir100ma+7infrared led receiverinfrared receiver ledinfrared circuitinfrared transistor850 nm ledhigh power infrared ledtr11
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MARKING CODE CCB
Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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bc846s/bc846u/bc847sbc846s+3bc846ueha07178marking code ccb
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1LS transistor
Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
Contextual Info: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C
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q62702-c2155q62702-c2156q62702-c2157ot-143+41ls transistor61 transistormarking 1kstransistor marking t2
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Katalog tesla tranzistor
Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA
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kfy18kfy34kfy46ksy63+11ksy82katalog tesla tranzistorkf520kf173tesla katalogkf630dkf521ku611kd502kf517akf517
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transistor vergleichsliste
Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G
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transistor vergleichslistetransistor vergleichsliste ddrtelefunken transistorenvalvo+6bsw69vergleichsliste ddrvergleichslistetransistor bc-148rft transistorentransistoren ddr
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BCW60
Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration
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bcw60bcx70bcw61bcx71+6bcw60abcw60bbcw60cbcw60dbcw60ffbcw60fn
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BC846
Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
Contextual Info: BC856.BC860 PNP Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type
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bc856bc860bc846bc847+6bc848bc849bc850bc856abc856bbc857a
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C1567
Abstract: Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 PNP Type Marking Ordering Code
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q62702-c1517q62702-c1497q62702-c1476q62702-c1477+9q62702-c1529q62702-c1567q62702-c1539q62702-c1481q62702-c1552q62702-c1571c1567c1517marking ags sot-23
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BC847PN SOT363
Abstract: VPS05604 BC847PN Marking 1ps sot
Contextual Info: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation
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bc847pnvps05604ot-363eha07193+7eha07177ot363ehp00365ehp00364ehp00368bc847pn sot363marking 1ps sot
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3904
Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
Contextual Info: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings
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q68000-a8396ot-893904transistor 3904+5tr 39043904 npn3904 transistortransistor 3904 npn datasheet3904 transistor npn
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2222a
Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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q68000-a6481q68000-a6473ot-232222a+5npn 22222222 npnbr 2222 npn2222 a2222
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bcy580
Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
Contextual Info: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation
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bcy59lb2ai10mabcy580bcy590+3transistor h21eschemabcy 59
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BCX70
Abstract: hFE Group BCX70G BCX70H BCX70J BCX70K BCX71 ferranti mark xa SOT-23 BCX70J SOT-23 AJ K BCX70
Contextual Info: k FERRANTI semiconductors BCX70 i N P N Silicon Planar Sm all Signal Transistor DESCRIPTION These devices are intended fo r use in low level am plifica tion, lo w level switching and lo w noise applications. Com plementary to th e BCX71 series. Encapsulated in the popular SOT-23 package these devices
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BC107B
Abstract: BC107 characteristic BC107B, MOTOROLA
Contextual Info: MOTOROLA Order this document by BC107B/D SEMICONDUCTOR TECHNICAL DATA Transistors BC107B NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 45 Vdc Collecto r-B ase Voltage v CBO 50 Vdc Em itter-Base Voltage Rating
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CH3906TGP
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3906TGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT-416
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CH3906VGP
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3906VGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563
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CH3904VGP
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3904VGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563
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H12E
Abstract: BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e
Contextual Info: BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 3 2 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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bcv61eha00012ot143bcv61b+6bcv61ch12etransistor marking t2bcv61abfp181h11e
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marking code MS SOT323
Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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bc856-bc860bc846-bc850+9bc856abc856bbc856bwot323marking code ms sot323bc850bc857abc857bbc860
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ic power 22E
Abstract: 3904U power 22E IC 1N916
Contextual Info: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)
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3904u100ma3906uvpw09197+8eha07178sc-74ehp00763ehp00764oct-14-1999ic power 22epower 22e ic1n916
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transistor Bc 580
Abstract: marking 1cs 847S transistor bc 100
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration
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ot-363q62702-2372jan-20-1997transistor bc 580+3marking 1cs847stransistor bc 100
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bc 104 npn transistor
Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
Contextual Info: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
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847pnq62702-c2374ot-363jan-20-1997+6bc 104 npn transistornpntransistor4e sot-363transistor bc 901ps marking codetransistor bc 650 c
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1bs sot323
Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP
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bc846wbc850wbc856wbc857w+10bc858wbc859wbc860wvso05561bc846awot3231bs sot323bc8488bc849cwbc846bw
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BC847
Abstract: BC857AT BC857BT BC857T SC75 VPS05996
Contextual Info: BC857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC847.T 2 1 Type Marking Pin Configuration BC857AT 3Es 1=B 2=E 3=C SC75 BC857BT 3Fs 1=B
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bc857tbc847bc857atbc857bt+6vps05996ehp00381ehp00380nov-29-2001ehp00382sc75
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