BC859W Search Results
BC859W Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BC859W | Diotec | Surface mount Si-Epitaxial PlanarTransistors | Original | 123.23KB | 2 | ||
| BC859W | Infineon Technologies | NPN Silicon AF Transistors | Original | 235.16KB | 8 | ||
| BC859W | Infineon Technologies | PNP Silicon AF Transistors | Original | 132.25KB | 8 | ||
| BC859W | Kexin | PNP General Purpose Transistor | Original | 47.71KB | 2 | ||
| BC859W | NXP Semiconductors | PNP general purpose transistors | Original | 64.46KB | 7 | ||
| BC859W | Philips Semiconductors | PNP General Purpose Transistor | Original | 50.47KB | 8 | ||
| BC859W | Philips Semiconductors | PNP General Purpose Transistor | Original | 82.19KB | 3 | ||
| BC859W | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||
| BC859W | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||
| BC859W | TY Semiconductor | PNP General Purpose Transistor - SOT-323 | Original | 128.3KB | 2 | ||
| BC859WT/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 46.09KB | 1 |
BC859W Price and Stock
Nexperia BC859W/T3Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC859W/T3 | 9,361 |
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Nexperia BC859W-TSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC859W-T | 8,694 |
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Nexperia BC859WT/RSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC859WT/R | 8,586 |
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Nexperia BC859WSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC859W | 2,902 |
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BC859W Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage |
Original |
bc859wbc860wbc859bwbc860bw+2 | |
str 6707
Abstract: datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707
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Original |
m3d187bc859wbc860wot323+14 | |
1bs sot323
Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
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Original |
bc846wbc850wbc856wbc857w+10 | |
MARKING CODE 21E SOT323
Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
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Original |
bc846wbc850wbc856wbc857w+12 | |
BC846W
Abstract: BC849W BC856AW BC856W BC857AW BC857W BC858W BC859W
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Original |
bc856wbc859wot-323ul94v-0+6 | |
BC8488
Abstract: H12E BC848 equivalent 1bs sot323
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Original |
bc846wbc850wbc856wbc857w+10 | |
BC856BW
Abstract: BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wot-323bc857wbc858w+6 | |
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Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP |
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bc846wbc850wbc856wbc857w+6 | |
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Contextual Info: BC856W . BC859W BC856W . BC859W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-06-27 2 ±0.1 0.3 1±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm] |
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bc856wbc859wot-323ul94v-0+2 | |
1bs sot323
Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
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Original |
bc846wbc850wbc856wbc857w+9 | |
BC856CW
Abstract: BC856BW BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |
BC transistor series
Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
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Original |
bc856wbc857wbc858wbc859w+7 | |
MARKING CODE 21E SOT323
Abstract: sot323 marking code A.C BC8488
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Original |
bc846wbc850wbc856wbc857w+9 | |
transistor marking 4D
Abstract: BC859BW BC859CW BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S
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OCR Scan |
d0544fl4bc859wbc860wot323+8 | |
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BC856CW
Abstract: BC856BW BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wbc860wot-323bc857w+7 | |
BC856CW
Abstract: BC856BW BC860AW BC856AW BC856W BC857W BC858W BC859W BC860BW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |
BC856BW
Abstract: BC860BW BC856AW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PINNING FEATURES |
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m3d187bc859wbc860wot323+3 | |
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Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors FEATURES BC859W; BC860W PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Low noise stages in tape recorders, hi-fi amplifiers and |
OCR Scan |
bc859wbc860wot323bc849w+4 | |
marking code 4DContextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors |
OCR Scan |
bc859wbc860wbc850w115002/00/04/pp8+1 | |
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Contextual Info: BC859W Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.125 h(FE) Max. Current gain.800 |
Original |
bc859wfreq100m | |
4d SMD Transistor
Abstract: 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR
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bc859wbc860wbc859bwbc860bw+12 | |
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Contextual Info: b b S B ' m 0054484 015 * A P X Philips Semiconductors PNP general purpose transistor BC859W; BC860W AUER PHILIPS/DISCRETE FEATURES Product specification b?E PIN CONFIGURATION • S- mini package. • Low noise JEL?_EL 1 c DESCRIPTION PNP transistor in a plastic SOT323 |
OCR Scan |
bc859wbc860wot323mbb018+4 | |
marking 4d npnContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC859W; BC860W |
Original |
m3d187bc859wbc860wot323+5 | |