MBC87 Search Results

PMF400UN

Contextual Info: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package

PMF370XN

Abstract: SOT323 FET N M 087
Contextual Info: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

Philips FA 261

Contextual Info: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •

Contextual Info: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES BAS70W series PINNING • Low forward voltage BAS70 PIN • High breakdown voltage • Guard ring protected • Very small S M D package • Low capacitance. W -04W -05W

stb 1277 TRANSISTOR equivalent

Abstract: MSC 1691 transistor 1201 1203 1205 B3c1 RF NPN POWER TRANSISTOR C 10-12 GHZ BFS505 FC 0137 transistor Bf 966 msc 1697 transistor bf 979
Contextual Info: Philips Sem iconductors b L S B IB l N A tlE R 0 0 B 5 2 clL i T tiT IH A P X P H IL IP S /D IS C R E T E Product specification b?E D NPN 9 GHz wideband transistor BFS505 PIN CONFIGURATION PINNING FEATURES PIN DESCRIPTION • Low current consumption • High power gain

smd diode marking a6

Abstract: BAS16W smd diode code a6 marking code a6 smd diode marking code a6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAS16W High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 12 Philips Semiconductors Product specification High-speed diode BAS16W

"MARKING CODE A1"

Abstract: BAW56W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode

SMD diode 6.8y

Abstract: smd code marking 18Y 51y diode BZV49 SOT89 smd marking 13 marking code 47y 43Y smd code BZV49-C12 BZV49-C75 BZV49-C2V7
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES

smd diode code A4

Abstract: DIODE smd marking A4 smd diode A4 BAV70W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAV70W High-speed double diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed double diode BAV70W

MRC002

Abstract: MRC005 MRC008 BFS540 MRC003 philips bfs540
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS540 PINNING • High power gain

MRC026

Abstract: MRC025 MRC027 BFS520 mrc024 MRC021
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS520 • High transition frequency It is intended for wideband applications such as satellite TV

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic

1PS302

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D187 1PS302 High-speed double diode Product specification Supersedes data of 1996 Sep 03 File under Discrete Semiconductors, SC01 1996 Oct 04 Philips Semiconductors Product specification High-speed double diode

1PS70SB82

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes

BFS540

Abstract: MRC005
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION

MB88121B

Abstract: MB88121 mbc107 mbc107 transistor ND-19 SPP0110 032-G TIBC 0714H ccfl driver schematic fujitsu
Contextual Info: FUJITSU SEMICONDUCTOR ASSP MANUAL AM15-11201-1E FlexRay ASSP MB88121B User’s Manual FlexRay ASSP MB88121B User’s Manual FUJITSU LIMITED PREFACE • Purpose of this document Thank you for reading about this Fujitsu semiconductor device. The MB88121B is a controller that performs FlexRay communications in accordance with the FlexRay

mbc15

Abstract: TIBC MB91F465 ccf um SCCB FR70 MB91460 MB91F465XA MB91V460 QFP100
Contextual Info: FUJITSU SEMICONDUCTOR MB91F465XA preliminary datasheet MB91460 series European MCU Design Centre EMDC Fujitsu Microelectronics Europe GmbH Pittlerstrasse 47 63225 Langen, Germany Version 0.11, File: mb91f465xa_shortspec.doc European MCU Design Centre MB91F465XA preliminary datasheet ver. 0.11

Contextual Info: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package

BAS16W

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BAS16W High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS16W

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION • High power gain

Contextual Info: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323.