1996 - NT 407 F TRANSISTOR
Abstract: NT 407 F power transistor 2SC5178 2SC5178-T1 2SC5178-T2 transistor NEC D 587 t84 marking
Text: . DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD , gain PACKAGE DIMENSIONS (Units: mm) |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz +0.2 2 +0.1 0.4 0.05 (1.9) 4 , your NEC sales representatives to order samples for evaluation (available in batches of 50). nt , Base Voltage CAUTION; This transistor uses high-frequency technology. Be careful not to allow
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2000 - 2SC5178
Abstract: 2SC5178R 2SC5178R-T1 2SC5178R-T2 557 sot143 NT 407 F power transistor
Text: . DATA SHEET SILICON TRANSISTOR 2SC5178R uc t NPN EPITAXIAL SILICON TRANSISTOR IN 4 , 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). nt ABSOLUTE MAXIMUM RATINGS , +0.2 1.5 0.1 0.6 0.05 | S21 | 2 = 10.5 dB TYP. @VCE = 1 V, I C = 5 mA, f = 2 GHz 0.4 | S21 | 2 = 11.5 dB TYP. @VCE = 2 V, I C = 7 mA, f = 2 GHz 0.16 0.06 · Low current consumption and high gain This transistor uses high-frequency technology. Be careful not to allow excessive
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1997 - NEC D 586
Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
Text: RG = 100 k co nt 1 - 47 µ F + D is 1 mA G = 80 dB -15 V FLAT VCE , . DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 uc t NPN SILICON EPITAXIAL TRANSISTOR 3 , . Collector PARAMETER co Collector Cutoff Current nt ELECTRICAL CHARACTERISTICS (Ta = 25 C , = 5 mA 150 3.5 GHz *1 VCE = 5 V, IC = 5 mA pF VCB = 5 V, IE = 0, f = 1 MHz 9.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz dB VCE = 5 V, IC = 5 mA, f = 1 GHz mV See Test
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FERRITE TOROID
Abstract: motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola
Text: UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, largesignal output and , , 1000 MHz 3.5 W BROADBAND UHF POWER TRANSISTOR · BuiltIn Matching Network for Broadband Operation , CommonEmitter Amplifier SmallSignal Gain (VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA) GSS 10 dB Load Mismatch (VCE = 19 V, IC = 600 mA, Pout = 3.5 W, f = 1 GHz, Load VSWR = :1, All , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS No Degradation in
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MRA1000
MRA1000-3
FERRITE TOROID
motorola 2n2222
2N2222
TIP41
TIP41 amplifier
10 35L C5
2N2222 motorola
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1995 - NT 407 F TRANSISTOR
Abstract: NT 407 F power transistor Motorola Power Transistor Data Book MJE9780 MOTOROLA TRANSISTOR MOTOROLA TRANSISTOR 279 MOTOROLA POWER TRANSISTOR motorola bipolar transistor Motorola Bipolar Power Transistor Data 221A-06
Text: , N.T ., Hong Kong. 85226629298 4 Motorola Bipolar Power Transistor Device Data *MJE9780/D , * Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is , applications requiring a 150 volt PNP transistor . Features: PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 , best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data , , f = 1.0 MHz) fT MHz * Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%. 2
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MJE9780/D
MJE9780
MJE9780
220AB
mAdc/10
MJE9780/D*
NT 407 F TRANSISTOR
NT 407 F power transistor
Motorola Power Transistor Data Book
MOTOROLA TRANSISTOR
MOTOROLA TRANSISTOR 279
MOTOROLA POWER TRANSISTOR
motorola bipolar transistor
Motorola Bipolar Power Transistor Data
221A-06
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motorola 572 transistor
Abstract: 5Bp power BALLAST MOTOROLA TP3022B transistor 431 ab
Text: Power Transistor TP3022B The TP3022B is designed for commonemitter operation in the 900 MHz , power output/driver transistor with stateofthe art ruggedness and reliability. · Specified 26 Volts , NPN SILICON UHF POWER TRANSISTOR · Class AB Operation MAXIMUM RATINGS Rating Symbol , 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) GPE 8.5 - - dB Collector Efficiency (VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) c 45 - - % Characteristic OFF
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TP3022B/D
TP3022B
TP3022B
TP3022B/D*
motorola 572 transistor
5Bp power
BALLAST MOTOROLA
transistor 431 ab
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NT 407 F transistor
Abstract: NT 407 F power transistor SLN-407
Text: H Siali ford Microdevices SLN- 407 DC-2.5 GHz 50 Ohm LNA MMIC Amplifier Product Description Stanford M icrodevices' SLN- 407 is a high performance GaAs Heterojunction Bipolar Transistor (HBT) MMIC , C - 1 .0 G H z T h i r d O r d e r I n t e r c e p t Poi nt : Device Voltage f = 1 .0-2.5 G H z Id = , ultra-linear performance to 2.5 GHz, ideal for dual or tri-band applications. The SLN - 407 needs only 2 , t i o n s Z Ù= 50 O h m s , Id = 7 m A f = D C - 1 .0 G H z f = 1 .0-2.5 G H z f = DC-2.5 GHz f = D
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SLN-407
SLN-407
NT 407 F transistor
NT 407 F power transistor
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1999 - Not Available
Abstract: No abstract text available
Text: dB, TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR LIFETIME BUY CASE 145D02, STYLE 1 , LAST SHIP 18/03/00 UHF Power Transistor ELECTRICAL CHARACTERISTICS - continued Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz , mW, f = 1.0 GHz, IC = 2.4 A) Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 2.4 A, f = 1.0 GHz) (No degradation) Output
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MRA1000
14L/D
MRA1000-14L
MRA1000-14L/D*
14L/D
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1999 - MOTOROLA 813 transistor
Abstract: No abstract text available
Text: BROADBAND UHF POWER TRANSISTOR LIFETIME BUY THERMAL CHARACTERISTICS Max 4.0 Unit °C/W ELECTRICAL , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) - - 22 pF FUNCTIONAL TESTS CommonEmitter Amplifier SmallSignal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 1.2 A, f = 1.0 GHz) (No degradation) Output Power, 1.0 dB Compression Point (VCE = 19 V, f = 1.0 GHz, IC =
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MRA1000
MRA1000-7L/D*
MOTOROLA 813 transistor
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BALLAST MOTOROLA
Abstract: MRA1000-14L 380SOE
Text: UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, largesignal output and , , TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR · BuiltIn Matching Network for Broadband , CommonEmitter Amplifier SmallSignal Gain (VCE = 19 V, Pin = 1.0 mW, f = 1.0 GHz, IC = 2.4 A) GSS 8.0 - - dB Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz
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MRA1000
14L/D
MRA1000-14L
MRA1000-14L/D*
BALLAST MOTOROLA
MRA1000-14L
380SOE
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BALLAST MOTOROLA
Abstract: MRA1000-7L 145D-02
Text: UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, largesignal output and , 9.0 dB, TO 1000 MHz 7.0 WATTS BROADBAND UHF POWER TRANSISTOR · BuiltIn Matching Network for , = 1.0 A, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS CommonEmitter Amplifier SmallSignal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase
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MRA1000
MRA1000-7L
MRA1000-7L/D*
BALLAST MOTOROLA
MRA1000-7L
145D-02
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diode 1N4148 SMD PACKAGE DIMENSION
Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
Text: Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , - dB Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles
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MRF6402/D
MRF6402
MRF6402
diode 1N4148 SMD PACKAGE DIMENSION
motorola 1N4148
SMD DIODE gp 317
Transistor t 2 smd motorola
100 pf, ATC Chip Capacitor 100A
3 w RF POWER TRANSISTOR NPN
BALLAST MOTOROLA
bd135 n
transistor 431 ab
1N4148
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1995 - motorola rf Power Transistor
Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
Text: Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles at Frequency
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MRF6402/D
MRF6402
MRF6402
MRF6402/D*
motorola rf Power Transistor
motorola 1N4148
1N4148
BD135
5Bp smd transistor data
SMD DIODE gp 317
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TP5015
Abstract: NT 407 F TRANSISTOR
Text: Linear Power Transistor TP5015 . . . designed for 24 Volt UHF largesignal common emitter amplifier , LINEAR POWER TRANSISTOR NPN SILICON · High Gain - 11 dB Min, Class AB · Gold Metallization for , , Pout = 15 W, f = 470 MHz, IQ = 50 mA) GPE 11 - - dB Collector Efficiency (VCE = 24 V, Pout = 15 W, f = 470 MHz, IQ = 50 mA) c 50 60 - % Characteristic OFF , = 100 mA, VCE = 10 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0
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TP5015/D
TP5015
TP5015/D*
TP5015
NT 407 F TRANSISTOR
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5Bp smd
Abstract: smd transistor 8g 1N4148 ATC100A BD135 CS-12 MRF6406 CASE-319 bd135 equivalent Transistor t 2 smd motorola
Text: F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 £29 2.79 , Silicon RF Power Transistor The MRF6406 is designed for 1.88 GHz Personal Communications Network (PCN) base station applications. For ease of design, this transistor has an internally matched input. â , Migration ⢠Silicon Nitride Passivated MAXIMUM RATINGS MRF6406 12 W, 1.88 GHz RF POWER TRANSISTOR NPN , (Vqb = 26 Vdc, lE = 0, f = 1 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (Vqe = 26
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MRF6406/D
MRF6406
MRF6406
2PHX33607Q-0
MRF6406/D
5Bp smd
smd transistor 8g
1N4148
ATC100A
BD135
CS-12
CASE-319
bd135 equivalent
Transistor t 2 smd motorola
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1995 - NT 407 F TRANSISTOR
Abstract: NT 407 F power transistor motorola bipolar transistor MJE8503A Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf
Text: Transistor Device Data 3 MJE8503A PACKAGE DIMENSIONS T B SEATING PLANE C F T S , Ting Kok Road, Tai Po, N.T ., Hong Kong. 85226629298 4 Motorola Bipolar Power Transistor , * Advance Information SWITCHMODETM Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS The MJE8503A transistor is designed for , . 1995 Motorola Bipolar Power Transistor Device Data 1 MJE8503A ELECTRICAL CHARACTERISTICS (TC =
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MJE8503A/D
MJE8503A*
MJE8503A
MJE8503A/D*
NT 407 F TRANSISTOR
NT 407 F power transistor
motorola bipolar transistor
Motorola Bipolar Power Transistor Data
bipolar transistor td tr ts tf
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NT 407 F TRANSISTOR TO 220
Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
Text: VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT , Power MOSFET Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vd Vd f = 1.0 MHz) Transfer , 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
108 motorola transistor
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
motorola mosfet
632 transistor motorola
221A-09
MOTOROLA TRANSISTOR
MGP20N14CL
motorola transistor ignition
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL
Text: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
NT 407 F MOSFET TRANSISTOR
NT 407 F power transistor
MGP20N14CL
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1996 - NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Text: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , to change without notice. © Motorola TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance , %. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL PACKAGE DIMENSIONS T B , . DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F
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MGP20N14CL/D
MGP20N14CL
MGP20N14CL/D*
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
NT 407 F power transistor
mosfet 407
MGP20N14CL
MOTOROLA TRANSISTOR TO-220
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279
Text: IGBT VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , . REV 2 © Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J
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MGP20N14CL/D
MGP20N14CL
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
motorola mosfet
108 motorola transistor
motorola sps transistor
motorola transistor ignition
MGP20N14CL
mosfet transistor
NT 407 F transistor
MOTOROLA TRANSISTOR 279
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354500-1
Abstract: 1385460 261G2 680673-3 applicator 1385460 1327FP 114765P1 4327 AMP PBT GF15 3 pin 1327G6FP
Text: ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 , City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 6460 - 12 - www.andersonpower.com , Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 9036 CHINA: IDEAL Anderson , .116, Dadun 20th St., Situn District, Taichung City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 , ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635
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PP15/45
PP15/45
354500-1
1385460
261G2
680673-3
applicator 1385460
1327FP
114765P1
4327
AMP PBT GF15 3 pin
1327G6FP
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1997 - NT 407 F TRANSISTOR
Abstract: 2SC2150 2SC2585 2SC2367 NE AND micro-X NEC NE "micro x" 2SC1223 2SC3604 2SC2148 2SC2149
Text: a Green m D is f u 12 5 d in ue nt co is D uc t Pr , . DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS (in mm) 3.8 MIN. E FEATURES 3.8 MIN. : NF = 1.6 dB TYP. @ f = 2.0 GHz C · High power gain : GA = 12 dB TYP. @ f = 2.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 , +150 °C nt 200 2.1 mW Tstg Storage Temperature 580 Tj Junction
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TP3008
Abstract: No abstract text available
Text: Power Transistor TP3008 The TP3008 is designed for 960 MHz cellular radio base stations in both , TRANSISTOR NPN SILICON ⢠Class AB Operation ⢠Circuit board photomaster available upon request by , CHARACTERISTICS Output Capacitance (VCE = 24 V, IE = 0, f = 1 MHz ) (continued) REV 6 ©MOTOROLA RF , TESTS (VCC = 24 V, f = 960 MHz) CommonâEmitter Amplifier Gain (Pout = 4 W, ICQ = 50 mA) No Degradation in Output Power f = 900 MHz 980 Zin 980 ZOL* Zo = 50 ⦠f = 900 MHz Output
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TP3008
TP3008
TP3008/D*
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SK-2050
Abstract: 261G2 680673-3 applicator 1385460 1385460 261G1 4327 AMP PBT GF15 3 pin Crimping micro applicator ad212
Text: ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 , City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 6460 - 12 - www.andersonpower.com , ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 , City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 6460 -2- www.andersonpower.com , .116, Dadun 20th St., Situn District, Taichung City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310
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PP15/45
PP15/45
SK-2050
261G2
680673-3
applicator 1385460
1385460
261G1
4327
AMP PBT GF15 3 pin
Crimping micro applicator
ad212
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T
Text: .COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 , MJE803T NPN FIGURE 2 - SWITCHING TIMES TEST CIRCUIT (,. if < 10 nt 'UTY CYCtE ⢠1.0* For NPN ini , ) There are two limitation on the power handling ability of a transistor :average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be
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MJE700T
MJE701T
MJE800T
MJE801T
MJE702T
MJE703T
MJE802T
MJE803T
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
npn transistor nt 407 f
80 amp 30v npn darlington
10 amp npn darlington power transistors
MJE701
NPN/NT 407 F TRANSISTOR
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