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    nt 407 f transistor Datasheets

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    Part ECAD Model Manufacturer Description Download Buy
    BD9G102G-LB ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade) Visit ROHM Semiconductor
    BD9G341AEFJ ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET Visit ROHM Semiconductor
    BD9G101G ROHM Semiconductor Step-down Switching Regulators with Built-in Power MOSFET Visit ROHM Semiconductor
    BD9E104FJ ROHM Semiconductor 7.0 V to 26.0 V Input, 1 A Integrated MOSFET Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9A600MUV ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9G341AEFJ-LB ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade) Visit ROHM Semiconductor

    nt 407 f transistor Datasheets Context Search

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    1996 - NT 407 F TRANSISTOR

    Abstract: NT 407 F power transistor 2SC5178 2SC5178-T1 2SC5178-T2 transistor NEC D 587 t84 marking
    Text: . DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD , gain PACKAGE DIMENSIONS (Units: mm) |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz +0.2 2 +0.1 0.4 ­0.05 (1.9) 4 , your NEC sales representatives to order samples for evaluation (available in batches of 50). nt , Base Voltage CAUTION; This transistor uses high-frequency technology. Be careful not to allow


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    2000 - 2SC5178

    Abstract: 2SC5178R 2SC5178R-T1 2SC5178R-T2 557 sot143 NT 407 F power transistor
    Text: . DATA SHEET SILICON TRANSISTOR 2SC5178R uc t NPN EPITAXIAL SILICON TRANSISTOR IN 4 , 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). nt ABSOLUTE MAXIMUM RATINGS , +0.2 1.5 ­0.1 0.6 ­0.05 | S21 | 2 = 10.5 dB TYP. @VCE = 1 V, I C = 5 mA, f = 2 GHz 0.4 | S21 | 2 = 11.5 dB TYP. @VCE = 2 V, I C = 7 mA, f = 2 GHz 0.16 ­0.06 · Low current consumption and high gain This transistor uses high-frequency technology. Be careful not to allow excessive


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    1997 - NEC D 586

    Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
    Text: RG = 100 k co nt 1 - 47 µ F + D is 1 mA G = 80 dB -15 V FLAT VCE , . DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 uc t NPN SILICON EPITAXIAL TRANSISTOR 3 , . Collector PARAMETER co Collector Cutoff Current nt ELECTRICAL CHARACTERISTICS (Ta = 25 C , = 5 mA 150 3.5 GHz *1 VCE = 5 V, IC = 5 mA pF VCB = 5 V, IE = 0, f = 1 MHz 9.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz dB VCE = 5 V, IC = 5 mA, f = 1 GHz mV See Test


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    FERRITE TOROID

    Abstract: motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola
    Text: UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large­signal output and , , 1000 MHz 3.5 W BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for Broadband Operation , Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA) GSS 10 ­ ­ dB Load Mismatch (VCE = 19 V, IC = 600 mA, Pout = 3.5 W, f = 1 GHz, Load VSWR = :1, All , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS No Degradation in


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    PDF MRA1000 MRA1000-3 FERRITE TOROID motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola

    1995 - NT 407 F TRANSISTOR

    Abstract: NT 407 F power transistor Motorola Power Transistor Data Book MJE9780 MOTOROLA TRANSISTOR MOTOROLA TRANSISTOR 279 MOTOROLA POWER TRANSISTOR motorola bipolar transistor Motorola Bipolar Power Transistor Data 221A-06
    Text: , N.T ., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor Device Data *MJE9780/D , * Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is , applications requiring a 150 volt PNP transistor . Features: PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 , best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data , , f = 1.0 MHz) fT MHz * Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%. 2


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    PDF MJE9780/D MJE9780 MJE9780 220AB mAdc/10 MJE9780/D* NT 407 F TRANSISTOR NT 407 F power transistor Motorola Power Transistor Data Book MOTOROLA TRANSISTOR MOTOROLA TRANSISTOR 279 MOTOROLA POWER TRANSISTOR motorola bipolar transistor Motorola Bipolar Power Transistor Data 221A-06

    motorola 572 transistor

    Abstract: 5Bp power BALLAST MOTOROLA TP3022B transistor 431 ab
    Text: Power Transistor TP3022B The TP3022B is designed for common­emitter operation in the 900 MHz , power output/driver transistor with state­of­the­ art ruggedness and reliability. · Specified 26 Volts , NPN SILICON UHF POWER TRANSISTOR · Class AB Operation MAXIMUM RATINGS Rating Symbol , 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) GPE 8.5 - - dB Collector Efficiency (VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) c 45 - - % Characteristic OFF


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    PDF TP3022B/D TP3022B TP3022B TP3022B/D* motorola 572 transistor 5Bp power BALLAST MOTOROLA transistor 431 ab

    NT 407 F transistor

    Abstract: NT 407 F power transistor SLN-407
    Text: H Siali ford Microdevices SLN- 407 DC-2.5 GHz 50 Ohm LNA MMIC Amplifier Product Description Stanford M icrodevices' SLN- 407 is a high performance GaAs Heterojunction Bipolar Transistor (HBT) MMIC , C - 1 .0 G H z T h i r d O r d e r I n t e r c e p t Poi nt : Device Voltage f = 1 .0-2.5 G H z Id = , ultra-linear performance to 2.5 GHz, ideal for dual or tri-band applications. The SLN - 407 needs only 2 , t i o n s Z Ù= 50 O h m s , Id = 7 m A f = D C - 1 .0 G H z f = 1 .0-2.5 G H z f = DC-2.5 GHz f = D


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    PDF SLN-407 SLN-407 NT 407 F transistor NT 407 F power transistor

    1999 - Not Available

    Abstract: No abstract text available
    Text: dB, TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR LIFETIME BUY CASE 145D­02, STYLE 1 , LAST SHIP 18/03/00 UHF Power Transistor ELECTRICAL CHARACTERISTICS - continued Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz , mW, f = 1.0 GHz, IC = 2.4 A) Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 2.4 A, f = 1.0 GHz) (No degradation) Output


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    PDF MRA1000 14L/D MRA1000-14L MRA1000-14L/D* 14L/D

    1999 - MOTOROLA 813 transistor

    Abstract: No abstract text available
    Text: BROADBAND UHF POWER TRANSISTOR LIFETIME BUY THERMAL CHARACTERISTICS Max 4.0 Unit °C/W ELECTRICAL , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) - - 22 pF FUNCTIONAL TESTS Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 1.2 A, f = 1.0 GHz) (No degradation) Output Power, 1.0 dB Compression Point (VCE = 19 V, f = 1.0 GHz, IC =


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    PDF MRA1000 MRA1000-7L/D* MOTOROLA 813 transistor

    BALLAST MOTOROLA

    Abstract: MRA1000-14L 380SOE
    Text: UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large­signal output and , , TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for Broadband , Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, Pin = 1.0 mW, f = 1.0 GHz, IC = 2.4 A) GSS 8.0 - - dB Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz


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    PDF MRA1000 14L/D MRA1000-14L MRA1000-14L/D* BALLAST MOTOROLA MRA1000-14L 380SOE

    BALLAST MOTOROLA

    Abstract: MRA1000-7L 145D-02
    Text: UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large­signal output and , 9.0 dB, TO 1000 MHz 7.0 WATTS BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for , = 1.0 A, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase


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    PDF MRA1000 MRA1000-7L MRA1000-7L/D* BALLAST MOTOROLA MRA1000-7L 145D-02

    diode 1N4148 SMD PACKAGE DIMENSION

    Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
    Text: Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , - dB Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles


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    PDF MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148

    1995 - motorola rf Power Transistor

    Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
    Text: Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles at Frequency


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    PDF MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 BD135 5Bp smd transistor data SMD DIODE gp 317

    TP5015

    Abstract: NT 407 F TRANSISTOR
    Text: Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large­signal common emitter amplifier , LINEAR POWER TRANSISTOR NPN SILICON · High Gain - 11 dB Min, Class AB · Gold Metallization for , , Pout = 15 W, f = 470 MHz, IQ = 50 mA) GPE 11 - - dB Collector Efficiency (VCE = 24 V, Pout = 15 W, f = 470 MHz, IQ = 50 mA) c 50 60 - % Characteristic OFF , = 100 mA, VCE = 10 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0


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    PDF TP5015/D TP5015 TP5015/D* TP5015 NT 407 F TRANSISTOR

    5Bp smd

    Abstract: smd transistor 8g 1N4148 ATC100A BD135 CS-12 MRF6406 CASE-319 bd135 equivalent Transistor t 2 smd motorola
    Text: F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 £29 2.79 , Silicon RF Power Transistor The MRF6406 is designed for 1.88 GHz Personal Communications Network (PCN) base station applications. For ease of design, this transistor has an internally matched input. â , Migration • Silicon Nitride Passivated MAXIMUM RATINGS MRF6406 12 W, 1.88 GHz RF POWER TRANSISTOR NPN , (Vqb = 26 Vdc, lE = 0, f = 1 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (Vqe = 26


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    PDF MRF6406/D MRF6406 MRF6406 2PHX33607Q-0 MRF6406/D 5Bp smd smd transistor 8g 1N4148 ATC100A BD135 CS-12 CASE-319 bd135 equivalent Transistor t 2 smd motorola

    1995 - NT 407 F TRANSISTOR

    Abstract: NT 407 F power transistor motorola bipolar transistor MJE8503A Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf
    Text: Transistor Device Data 3 MJE8503A PACKAGE DIMENSIONS ­T­ B SEATING PLANE C F T S , Ting Kok Road, Tai Po, N.T ., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor , * Advance Information SWITCHMODETM Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS The MJE8503A transistor is designed for , . 1995 Motorola Bipolar Power Transistor Device Data 1 MJE8503A ELECTRICAL CHARACTERISTICS (TC =


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    PDF MJE8503A/D MJE8503A* MJE8503A MJE8503A/D* NT 407 F TRANSISTOR NT 407 F power transistor motorola bipolar transistor Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf

    NT 407 F TRANSISTOR TO 220

    Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
    Text: VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT , Power MOSFET Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vd Vd f = 1.0 MHz) Transfer , 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J


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    PDF MGP20N14CL/D MGP20N14CL NT 407 F TRANSISTOR TO 220 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL
    Text: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U


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    PDF MGP20N14CL/D MGP20N14CL NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL

    1996 - NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
    Text: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , to change without notice. © Motorola TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance , %. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL PACKAGE DIMENSIONS ­T­ B , . DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F


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    PDF MGP20N14CL/D MGP20N14CL MGP20N14CL/D* NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279
    Text: IGBT VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , . REV 2 © Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J


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    PDF MGP20N14CL/D MGP20N14CL NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279

    354500-1

    Abstract: 1385460 261G2 680673-3 applicator 1385460 1327FP 114765P1 4327 AMP PBT GF15 3 pin 1327G6FP
    Text: ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 , City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 6460 - 12 - www.andersonpower.com , Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 9036 CHINA: IDEAL Anderson , .116, Dadun 20th St., Situn District, Taichung City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 , ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635


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    PDF PP15/45 PP15/45 354500-1 1385460 261G2 680673-3 applicator 1385460 1327FP 114765P1 4327 AMP PBT GF15 3 pin 1327G6FP

    1997 - NT 407 F TRANSISTOR

    Abstract: 2SC2150 2SC2585 2SC2367 NE AND micro-X NEC NE "micro x" 2SC1223 2SC3604 2SC2148 2SC2149
    Text: a Green m D is f u 12 5 d in ue nt co is D uc t Pr , . DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS (in mm) 3.8 MIN. E FEATURES 3.8 MIN. : NF = 1.6 dB TYP. @ f = 2.0 GHz C · High power gain : GA = 12 dB TYP. @ f = 2.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 , +150 °C nt 200 2.1 mW Tstg Storage Temperature 580 Tj Junction


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    TP3008

    Abstract: No abstract text available
    Text: Power Transistor TP3008 The TP3008 is designed for 960 MHz cellular radio base stations in both , TRANSISTOR NPN SILICON • Class AB Operation • Circuit board photomaster available upon request by , CHARACTERISTICS Output Capacitance (VCE = 24 V, IE = 0, f = 1 MHz ) (continued) REV 6 ©MOTOROLA RF , TESTS (VCC = 24 V, f = 960 MHz) Common–Emitter Amplifier Gain (Pout = 4 W, ICQ = 50 mA) No Degradation in Output Power f = 900 MHz 980 Zin 980 ZOL* Zo = 50 Ω f = 900 MHz Output


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    PDF TP3008/D TP3008 TP3008 TP3008/D*

    SK-2050

    Abstract: 261G2 680673-3 applicator 1385460 1385460 261G1 4327 AMP PBT GF15 3 pin Crimping micro applicator ad212
    Text: ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 , City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 6460 - 12 - www.andersonpower.com , ., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T ., Hong Kong T:+(852) 2636 0836 F :+(852) 2635 , City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310 6460 -2- www.andersonpower.com , .116, Dadun 20th St., Situn District, Taichung City 407 , Taiwan (R.O.C.) T: +(886) 4 2310 6451 F :+(886) 4 2310


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    PDF PP15/45 PP15/45 SK-2050 261G2 680673-3 applicator 1385460 1385460 261G1 4327 AMP PBT GF15 3 pin Crimping micro applicator ad212

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T
    Text: .COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 , MJE803T NPN FIGURE 2 - SWITCHING TIMES TEST CIRCUIT (,. if < 10 nt 'UTY CYCtE • 1.0* For NPN ini , ) There are two limitation on the power handling ability of a transistor :average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be


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    PDF MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR npn transistor nt 407 f 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 NPN/NT 407 F TRANSISTOR
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