BAP64-04W
Abstract: DIODE marking S4 06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAP64-04W Silicon PIN diode Product specification Supersedes data of 2000 Jun 06 2001 Jan 29 NXP Semiconductors Product specification Silicon PIN diode BAP64-04W FEATURES PINNING • High voltage, current controlled
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m3d102bap64-04wot323r77/03/pp9+1diode marking s4 06
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marking code V6 DIODE
Abstract: marking code V6 marking code V6 17 surface mount diode V6 marking code diode BAP65-05W diode marking v6 marking code v6 29 DIODE marking code V6 33 surface mount diode Philips TV tuners SMD MARKING CODE V6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP65-05W Silicon PIN diode Product specification 2001 May 07 Philips Semiconductors Product specification Silicon PIN diode BAP65-05W FEATURES PINNING • Two elements in common cathode configuration PIN
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m3d102bap65-05wmam382613512/01/pp8+9marking code v6 diodemarking code v6marking code v6 17 surface mount diodev6 marking code diodediode marking v6marking code v6 29 diodemarking code v6 33 surface mount diodephilips tv tunerssmd marking code v6
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-05W Silicon PIN diode Product specification 2000 Jul 13 Philips Semiconductors Product specification Silicon PIN diode BAP64-05W FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION
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PMF400UN
Contextual Info: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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pmf400unm3d102ot323sc-70 |
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PDTC114EU
Abstract: PDTA114EU PDTA114E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 16 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES
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m3d102pdtc114eumam134ot323+4sca63115002/00/04/pp8pdta114eupdta114e
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transistor 1BT
Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification
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m3d102bc846wbc847wbc848w+12ot323bc856wbc857wtransistor 1bt1ft sot3231ft transistortransistor 1htbc847cw1gttransistor 1kt1bt 651kt marking codenpn 1bt
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PMF370XN
Abstract: SOT323 FET N M 087
Contextual Info: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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pmf370xnm3d102ot323sc-70+2sot323 fet nm 087
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PDTC124EU
Abstract: PDTA124EU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 Apr 16 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES
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m3d102pdtc124eumam134ot323+3sca63115002/00/03/pp8pdta124eu
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS20W NPN medium frequency transistor Product specification 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA
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m3d102bfs20wot323sc-70+3mam062sca63115002/00/01/pp8
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BC849BW
Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W
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m3d102bc849wbc850wot323+8bc859wbc860wsca63115002/00/03/pp8bc849bwbc849cwbc850bwbc850cw
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BFS20W
Abstract: marking N1 sc70
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS20W NPN medium frequency transistor Product data sheet 1999 Apr 21 NXP Semiconductors Product data sheet NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA PIN • Low voltage (max. 20 V).
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m3d102bfs20wot323sc-70+2115002/00/01/pp7marking n1 sc70
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"PNP Transistor"
Abstract: PBSS5140U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Mar 27 2001 Jul 20 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA
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m3d102pbss5140u613514/02/pp9pnp transistor |
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PBSS4140U
Abstract: PBSS5140U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 PBSS5140U PNP BISS transistor Product specification 2001 Mar 27 Philips Semiconductors Product specification PNP BISS transistor PBSS5140U FEATURES PINNING • High current max. 1 A PIN • Low collector-emitter saturation voltage ensures
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m3d102pbss5140uot323pbss4140u+1613514/01/pp8
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PMSTA93
Abstract: BP317 PMSTA42 PMSTA43 PMSTA92
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PMSTA92; PMSTA93 PNP high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Jun 01 Philips Semiconductors Product specification PNP high-voltage transistors PMSTA92; PMSTA93
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m3d102pmsta92pmsta93ot323+3pmsta42pmsta43bp317
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"MARKING CODE A1"
Abstract: BAW56W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode
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m3d102baw56wot323marking code a1 |
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smd schottky diode marking 72
Abstract: smd code marking WV 1PS70SB20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D102 1PS70SB20 Schottky barrier diode Product data sheet 2001 Mar 16 NXP Semiconductors Product data sheet Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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m3d1021ps70sb20ot323sc-70+4mam394613514/01/pp7smd schottky diode marking 72smd code marking wv
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smd diode code A4
Abstract: DIODE smd marking A4 smd diode A4 BAV70W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAV70W High-speed double diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed double diode BAV70W
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m3d102bav70wot323smd diode code a4+2diode smd marking a4smd diode a4
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smd schottky diode marking 72
Abstract: Schottky Diode Marking sc-70 smd diode A1 SMD CODE PACKAGE SOT323 M3D102 PHILIPS DIODE smd marking A1 smd diode E1 smd code marking LP 1PS70SB20 MAM394
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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m3d1021ps70sb20ot323sc-70+8mam394smd schottky diode marking 72schottky diode marking sc-70smd diode a1smd code package sot323philips diode smd marking a1smd diode e1smd code marking lp
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BP317
Abstract: PMATA06 PMSTA05 PMSTA06 PMSTA55 PMSTA56
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PMSTA05; PMSTA06 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 16 1999 Apr 29 Philips Semiconductors Product specification NPN general purpose transistors PMSTA05; PMSTA06
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m3d102pmsta05pmsta06ot323+5pmsta55pmsta56sca63bp317pmata06
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PF 08112
Abstract: BZB784 BZB784-C2V4 BZB784-C2V7 BZB784-C3V0 BZB784-C3V3 BZB784-C3V6 BZB784-C3V9 BZB784-C4V3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BZB784 series Voltage regulator double diodes Product data sheet Supersedes data of 2000 May 24 2001 Feb 27 NXP Semiconductors Product data sheet Voltage regulator double diodes BZB784 series FEATURES
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m3d102bzb784ot323sc-70+10mam407613514/02/pp8pf 08112bzb784-c2v4bzb784-c2v7bzb784-c3v0bzb784-c3v3bzb784-c3v6bzb784-c3v9bzb784-c4v3
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transistor t06
Abstract: PDTC124EU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jun 16 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor
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m3d102pdtc124euot323pdta124eu+4mga893sca60115104/1200/02/pp8transistor t06
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BFS20W NPN medium frequency transistor Product data sheet 1999 Apr 21 NXP Semiconductors Product data sheet NPN medium frequency transistor BFS20W FEATURES PINNING • Low current max. 25 mA PIN • Low voltage (max. 20 V).
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m3d102bfs20wot323sc-70+1115002/00/01/pp7
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1PS70SB82
Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes
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m3d1021ps70sb821ps70sb841ps70sb85+11ps70sb86
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BFS540
Abstract: MRC005
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION
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m3d102bfs540ot323mbc870+2613516/04/pp12mrc005
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