BC849 Search Results

BC848CMTF

Abstract: BC848AMTF BC847CMTF BC850 sot-23 body marking A 4 BC847AMTF BC846 BC849 BC856 BC860
Contextual Info: BC846- BC850 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

Cross Reference sot23

Abstract: FAIRCHILD SOT-23 MARK 30
Contextual Info: BC846/847/848/849/850 BC846/847/848/849/850 Switching and Amplifier Applications 3 • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

Transistors

Abstract: BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC859 BC860
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA

BC850 SOT23

Abstract: 2FP TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors

Contextual Info: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

BC846

Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

BC846AW

Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
Contextual Info: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage

BC10 npn transistor

Abstract: BC849C-2C BC850B/C C8050 transistor bc 556 BC847A BC848C BC850B BC848A bc848 NPN transistor
Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2

Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

8AA MARK SOT23

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC849, BC850 • Complement to BC8S6 . BC860 ABSOLUTE MAXIMUM RATINGS Ta= 25°C

Contextual Info: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323

BC849BW

Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W

VHF Transistors

Abstract: AVALANCHE TRANSISTOR bss65 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
Contextual Info: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS V CBO V CEO lc Volts Volts mA Type Ptot mW v ;E(sat hFE min./max. at Iq/Vce max at Ic /Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30

CMA102

Abstract: marking 2gp BC849 BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors
Contextual Info: • ^53*131 00244b2 4SI HIAPX BC849 BC850 b7E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage V g E = C o lle c to r-e m itte r voltage (open base)

849B

Abstract: BC846 QQ2507 BC849 BC850 BC856 BC860 BC847 SOT23 b 514 transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC849, BC850 • Com plem ent to BC856 . BC860 SOT-23 Characteristic Symbol

849B

Abstract: BC846 BC849 BC850 BC856 BC860 850B transistor bc846 848a on semiconductor to marking code 720
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC849, BC850 • Complement to BC856 . BC860 ABSOLUTE MAXIMUM RATINGS TA=25°°C

BC846W

Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

SOT-23

Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Contextual Info: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

BC849

Abstract: BC859
Contextual Info: BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package

BC846AW

Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B
Contextual Info: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1 ±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]

Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES 1999. 11. 30 Revision No : 2 1/1

Contextual Info: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN

ITT Intermetall

Abstract: BC849 marking 1A
Contextual Info: BC846 . BC849 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. It Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC846