BC849C Search Results

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

VHF Transistors

Abstract: AVALANCHE TRANSISTOR bss65 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
Contextual Info: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS V CBO V CEO lc Volts Volts mA Type Ptot mW v ;E(sat hFE min./max. at Iq/Vce max at Ic /Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30

Contextual Info: BC849CW Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30

Contextual Info: BC849CL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • BC846A THRU BC849C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Lead Free Finish/RoHS Compliant "P" Suffix designates

2f bc850

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14

VHF Transistors

Abstract: ZTX325 2N2708 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
Contextual Info: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS VCBO VCEO lc Volts Volts mA Type P to t mW v ;E(sat hFE min./max. at Iq/V ce max at Ic/Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS

Contextual Info: BC849C Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30

bkd transistor

Abstract: Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23
Contextual Info: SPRAGUE/SEMICO ND GROUP IME D • 0513050 0QG47TQ 7 ■ T-^-öl SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C BC856A BC8S6B BC857A BC857B

Contextual Info: MCC TM Micro Commercial Components Features • • • • • BC846A THRU BC849C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: MCC TM Micro Commercial Components BC846A THRU BC849C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6

Contextual Info: BC849CR Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: BC849CLT1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m

IC marking jw

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_

Contextual Info: • This Pro Electron Series ^ CES* V V Min By Its Respective TO-236 (49) 30 30 5 15 BC84BB (IK.) TO-236 (49) 30 30 5 BC&48C (1L.) TO-236 (49) 30 30 ■ (V) Min BC848A (1J.) BC849C (2C.) TO-236 (49) 30 BC850B (2F.) TO-236 (49) BC850C (2G.) (V) Min V V BE(SAT)

Contextual Info: MCC TM Micro Commercial Components Features • • • • • BC846A THRU BC849C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

849B

Abstract: 46b transistor BC848C diode 47c transistor marking 1f bc849
Contextual Info: MCC TM Micro Commercial Components BC846A THRU BC849C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power Dissipation: 0.225W Tamb=25ć (Note 1) Collector Current: 0.1A

BC558A

Abstract: 2N44Q3 bc327-16 bc558c BC556A 2N4401 surface mount BC337 sot23 BC556B SOT23 BC338-16 MP8A06
Contextual Info: S M A L L SIGNAL BIPOLAR TRANSISTORS PACKAGE Leaded Surface Mount Device TO-92 (SOT-23) # % hFE Veto (Voli) NPN PNP NPN PNP lc (mA) Low Noise BC549B BC559B BC849B BC859B 100 330 30 BC549C BC559C BC849C BC859C 100 600 2N4124 2N4126 Switchino 25 30 40 max.

RB160M

Contextual Info: 19-6043; Rev 1; 3/12 EVALUATION KIT AVAILABLE MAX17498A/MAX17498B/MAX17498C AC-DC and DC-DC Peak Current-Mode Converters for Flyback/Boost Applications General Description Benefits and Features The MAX17498A/MAX17498B/MAX17498C devices are current-mode fixed-frequency flyback/boost converters

SBC846B

Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
Contextual Info: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable