BC846S Search Results

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

marking 4ft sot363

Abstract: marking TR1 4FT SOT363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Product specification Supersedes data of 1999 May 28 1999 Sep 01 Philips Semiconductors Product specification NPN general purpose double transistor BC846S

BC848S

Abstract: BC847S BC846S BC856S BC858S
Contextual Info: BC846S . BC848S NPN General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-04-09 Dimensions / Maße in mm 2±0.1 5 2 2.1 Type Code 1 Plastic case Kunststoffgehäuse

BC846S

Contextual Info: BC846S Plastic-Encapsulate Multi-Chip NPN+NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-363 Two transistors in one package Reduces number of components and board space

marking 4ft sot363

Abstract: marking 4ft 4FT SOT363 4ft package sot-363
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC846S Features x x x Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package For Switching and AF Amplifier Applications

marking 4ft sot363

Abstract: BC846S 4FT SOT363 marking TR1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC846S NPN general purpose double transistor Product data sheet Supersedes data of 1999 May 28 1999 Sep 01 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S FEATURES

BC849S

Abstract: BC846S BC847S BC848S BC856S
Contextual Info: BC846S . BC849S BC846S . BC849S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage NPN NPN Version 2006-09-05 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 1 2 2.1 Type Code 1.25±0.1

Transistors Diodes smd e2

Abstract: smd marking 1d BC846S KC846S 5B-23
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors Array KC846S BC846S SOT-363 1.3 Unit: mm +0.1 -0.1 +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 0.65 0.36 For AF input stage and driver applications +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 Low collector-emitter saturation voltage.

marking 4ft sot363

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Preliminary specification 1999 May 28 Philips Semiconductors Preliminary specification NPN general purpose double transistor BC846S FEATURES • Two transistors in one package with SC-88 dimensions

Contextual Info: BC846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5

BC847S

Abstract: BC846S BC848S BC856S
Contextual Info: BC846S . BC849S BC846S . BC849S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage NPN NPN Version 2006-09-05 2±0.1 2 x 0.65 5 Type Code 1 2 1.25±0.1 4 2.1±0.1 6 0.9±0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC846S Multi-Chip TRANSISTOR NPN+NPN SOT-363 FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors

Contextual Info: MCC TM Micro Commercial Components BC846S BC846BS
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x x x x • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: SMD Type Product specification KC846S BC846S SOT-363 1.3 Unit: mm +0.1 -0.1 +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 0.65 0.36 For AF input stage and driver applications +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 Low collector-emitter saturation voltage.

Contextual Info: tgr P BC846S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L m TECHNICAL DATA NPN EPITAXIAL SEICON TRANSISTOR GENERAL PURPOSE TRANSISTOR *Co llll lenient to BC856S ABSOLUTE MAXIMUM RATINGS at I an*=25°C Symbol Rating Characteristic Collector-Base Voltage

1Ds SOT363

Abstract: marking 1DS sot363
Contextual Info: BC846S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

h11e

Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

BC846S SOT-363

Abstract: marking 4ft sot363
Contextual Info: MCC TM Micro Commercial Components BC846S BC846BS
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x x x x Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

marking 4ft sot363

Abstract: bc846bs BC846S marking 4ft
Contextual Info: MCC TM Micro Commercial Components BC846S BC846BS
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x x Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package

BC846U/S

Abstract: BC846U
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

Contextual Info: BC846S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

1DS sot363

Abstract: marking 1DS sot363
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

marking 1DS sot363

Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

1Ds SOT363

Abstract: BC846S VPS05604
Contextual Info: BC846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604