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    VPS05604 Search Results

    VPS05604 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BAV99S

    Abstract: VPS05604
    Contextual Info: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s


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    BAV99S VPS05604 EHA07287 OT363 Jun-29-2001 EHB00078 EHB00075 BAV99S VPS05604 PDF

    BAW56S

    Abstract: 6A1 diode VPS05604
    Contextual Info: BAW56S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Common anode  Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration


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    BAW56S VPS05604 EHA07288 OT363 Jul-05-2001 EHB00093 EHB00090 BAW56S 6A1 diode VPS05604 PDF

    BCR191S

    Abstract: VPS05604
    Contextual Info: BCR191S PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=22k, R2=22k) 2 3 1 VPS05604


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    BCR191S VPS05604 EHA07173 OT363 Jul-12-2001 BCR191S VPS05604 PDF

    1Ds SOT363

    Abstract: BC846S VPS05604
    Contextual Info: BC846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


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    BC846S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Jul-02-2001 EHP00365 1Ds SOT363 BC846S VPS05604 PDF

    VPS05604

    Abstract: bfs 11
    Contextual Info: BFS 17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363


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    VPS05604 EHA07196 OT-363 Oct-25-1999 VPS05604 bfs 11 PDF

    6A1 diode

    Abstract: 7006S VPS05604
    Contextual Info: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking


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    70-06S VPS05604 EHA07288 OT-363 EHB00042 EHB00043 EHB00044 EHB00045 Oct-07-1999 6A1 diode 7006S VPS05604 PDF

    VPS05604

    Abstract: A7s marking diode
    Contextual Info: BAV 99S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Connected in series  Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration


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    VPS05604 EHA07287 OT-363 Oct-08-1999 EHB00078 EHB00075 VPS05604 A7s marking diode PDF

    sot-36

    Abstract: VPS05604
    Contextual Info: BCR 39PN NPN/PNP Silicon Digital Transistor Array Preliminary data 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1 = 22k) 2 1 VPS05604


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    VPS05604 OT-363 EHA07193 EHA07290 OT-363 Oct-19-1999 sot-36 VPS05604 PDF

    Marking 3ds sot

    Abstract: VPS05604 TRANSISTOR BC 650 c
    Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


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    VPS05604 EHA07175 OT-363 EHP00381 EHP00380 Nov-08-1999 EHP00382 EHP00379 Marking 3ds sot VPS05604 TRANSISTOR BC 650 c PDF

    bcr135s

    Abstract: VPS05604 marking B1 sot363
    Contextual Info: BCR135S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604


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    BCR135S VPS05604 EHA07174 OT363 Nov-29-2001 bcr135s VPS05604 marking B1 sot363 PDF

    BCR39PN

    Abstract: VPS05604
    Contextual Info: BCR39PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1 = 22k) 2 3 1 VPS05604 Tape loading orientation


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    BCR39PN VPS05604 OT-363 EHA07193 EHA07290 OT363 Nov-29-2001 BCR39PN VPS05604 PDF

    BFS482

    Abstract: VPS05604
    Contextual Info: BFS482 NPN Silicon RF Transistor 4  For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA  f T = 8 GHz F = 1.2 dB at 900 MHz  Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5


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    BFS482 VPS05604 EHA07196 OT363 Jun-27-2001 BFS482 VPS05604 PDF

    transistor digital 47k 22k PNP NPN

    Abstract: BCR48PN VPS05604
    Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k


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    BCR48PN OT-363 VPS05604 EHA07193 EHA07176 Nov-29-2001 transistor digital 47k 22k PNP NPN BCR48PN VPS05604 PDF

    BC857S

    Abstract: VPS05604
    Contextual Info: BC857S PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


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    BC857S VPS05604 EHA07175 OT363 Peak30V EHP00381 EHP00380 Nov-29-2001 BC857S VPS05604 PDF

    BC846S

    Abstract: bc 104 npn transistor VPS05604 1Ds SOT363
    Contextual Info: BC846S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


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    BC846S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Nov-29-2001 EHP00365 BC846S bc 104 npn transistor VPS05604 1Ds SOT363 PDF

    BAW56S

    Abstract: Q62702-A1253 VPS05604
    Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Common anode 6 • Internal galvanic isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363


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    VPS05604 OT-363 Q62702-A1253 Sep-07-1998 EHB00093 EHB00090 BAW56S Q62702-A1253 VPS05604 PDF

    H12E

    Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type


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    SMBT3904PN VPS05604 EHA07177 OT363 EHP00763 EHP00764 Nov-30-2001 EHP00757 H12E PDF

    marking 1ps

    Contextual Info: BC847PN NPN/PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


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    BC847PN VPS05604 EHA07193 OT-363 EHA07177 OT363 250cal marking 1ps PDF

    marking WPs

    Contextual Info: BCR22PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=22k, R2=22k) 2 1 VPS05604 Tape loading orientation


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    BCR22PN EHA07193 VPS05604 OT-363 EHA07176 OT363 marking WPs PDF

    Marking 2G2

    Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain


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    BG3123. BG3123 VPS05604 BG3123R EHA07461 BG3123 BG3123R* OT363 Marking 2G2 PDF

    Marking WUS sot

    Abstract: MARKING CODE wus SOT363
    Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original
    BCR35PN VPS05604 EHA07193 OT-363 EHA07176 OT363 Marking WUS sot MARKING CODE wus SOT363 PDF

    Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package


    Original
    SMBT3904PN EHA07193 VPS05604 OT-363 EHA07177 OT363 PDF

    MARKING 1cs

    Contextual Info: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


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    BC847S VPS05604 EHA07178 OT363 MARKING 1cs PDF

    MA2220

    Contextual Info: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance


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    BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363 MA2220 PDF