EHA07196 Search Results

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

BFS483

Abstract: G1410 VPS05604
Contextual Info: BFS483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2

Contextual Info: BFS482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

transistor marking RHs

Abstract: marking rhs
Contextual Info: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see

transistor marking RHs

Abstract: BCR108S BFS483 bcr1 marking RHs
Contextual Info: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see

BCR108S

Abstract: BFS481 E6327 VPS05604
Contextual Info: BFS481 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA
f T = 8 GHz F = 1.4 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4

BFS481

Abstract: infineon marking RFs BCR108S
Contextual Info: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see

Contextual Info: BFS481 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package

BFS483

Contextual Info: BFS483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2

g1412

Contextual Info: BFS481 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA
f T = 8 GHz F = 1.4 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4

BCR108S

Abstract: BFS481 D08060 marking K1 sot363
Contextual Info: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package * Short term description

transistor marking RHs

Abstract: marking rhs BCR108S BFS483 transistor zs
Contextual Info: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package * Short term description

Marking code RHs

Contextual Info: BFS483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2

BFS480

Abstract: VPS05604
Contextual Info: BFS 480 NPN Silicon RF Transistor 4
For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
f T = 7 GHz F = 1.5 dB at 900 MHz 2 3 1
Two (galvanic) internal isolated VPS05604

VPS05604

Contextual Info: BFS 482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

VPS05604

Contextual Info: BFS 483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4

BFS481

Abstract: VPS05604
Contextual Info: BFS481 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA
f T = 8 GHz F = 1.4 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4

BFS482

Abstract: VPS05604
Contextual Info: BFS482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

BFS480

Abstract: VPS05604
Contextual Info: BFS480 NPN Silicon RF Transistor 4
For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
f T = 7 GHz 2 F = 1.5 dB at 900 MHz 1
Two (galvanic) internal isolated Transistors in one package

MARKING 1G TRANSISTOR

Abstract: BCR108S BFS481
Contextual Info: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see

BFS480

Contextual Info: BFS480 NPN Silicon RF Transistor 4
For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
f T = 7 GHz 2 F = 1.5 dB at 900 MHz 1
Two (galvanic) internal isolated Transistors in one package