BCR108S Search Results

BCR108

Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see

marking WHs

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package

BCR108S

Abstract: VPS05604
Contextual Info: BCR108S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604

marking WHS sot23

Abstract: transistor marking code whs
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see

BCR108S

Abstract: VPS05604
Contextual Info: BCR108S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package

BCR108

Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see

Sot-363 whs

Abstract: marking code WHs
Contextual Info: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs

bav99

Abstract: BAV-99S-E6327 bav99 infineon
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W

sot23 s1a marking

Abstract: marking code S1A sot23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

BAS16

Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U

bat62-03w

Abstract: BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT62 " BAT62-02W BAT62-03W BAT62-07W ! ,  " BAT62-09S $ ! ,    , ,  , 1   " # , BAT62-02L

NPN marking MCs

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ marking 4B2 BCR108S BFS17S
Contextual Info: BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at 4 5 6 collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see 1 2 3 package information below • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BCR133

Abstract: infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking
Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

BCR135

Abstract: BCR108W BCR135F BCR135S BCR135W BCW66
Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

BAS170W

Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

BCR15PN

Abstract: infineon marking W1s BCR108S E6327 VPS05604 marking code w1s
Contextual Info: BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see

Contextual Info: BG5412K Dual N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners 4 5 6 • Two AGC amplifiers in one single package, with on-chip internal switch 1 2 3 • Only one switching line to control both FETs • Integrated gate protection diodes

Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see