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BCR108 Datasheets (78)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BCR108	Infineon Technologies	Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V	Original	PDF	503.94KB	11
BCR108	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23	Original	PDF	500.07KB	10
BCR108	Infineon Technologies	R1=2.2 k ? R2=47k ?	Original	PDF	42.54KB	4
BCR108	Infineon Technologies	Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R₁ (typ): 2.2 kOhm; R₂: 47.0 k?; h_FE (min): 70.0; V_{i (on)} (min): 0.5 2mA / 0.3V;	Original	PDF	211.28KB	12
BCR108	Siemens	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit	Original	PDF	36.74KB	4
BCR108	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF	465.63KB	37
BCR108	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	98.69KB	1
BCR108	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	35.1KB	1
BCR108B6327	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF		11
BCR108B6327	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R	Original	PDF	500.06KB	10
BCR 108 B6327	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF	868.39KB
BCR108E6327	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF		11
BCR108E6327	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R	Original	PDF	500.07KB	10
BCR108E6327	Infineon Technologies	Digital Transistors - R1=2.2 kOhm, R2=47kOhm	Original	PDF	209.55KB	9

BCR108E6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3	Original	PDF	868.39KB
BCR108E6359	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R	Original	PDF	500.06KB	10
BCR108E6433	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF		11
BCR 108E6433	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R	Original	PDF	93.51KB	4
BCR108E6433	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R	Original	PDF	500.06KB	10
BCR108E6433HTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF	868.39KB

BCR108 Price and Stock

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Infineon Technologies AG BCR108WH6433XTMA1 Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	BCR108WH6433XTMA1		98,000		6,834	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
	BCR108WH6433XTMA1		40,000		6,834	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Avnet Americas	BCR108WH6433XTMA1	Tape & Reel			40,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	BCR108WH6433XTMA1		138,000		1	1 - 10 - 100 $0.05 1000 $0.04 10000 $0.04	Buy Now
EBV Elektronik	BCR108WH6433XTMA1			53 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BCR108WH6327XTSA1 Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	BCR108WH6327XTSA1		36,000		6,173	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
	BCR108WH6327XTSA1		9,000		6,173	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Avnet Americas	BCR108WH6327XTSA1	Tape & Reel		26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
Mouser Electronics	BCR108WH6327XTSA1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	BCR108WH6327XTSA1		50,492		1	1 - 10 - 100 $0.06 1000 $0.05 10000 $0.04	Buy Now
TME	BCR108WH6327XTSA1				3,000	1 - 10 - 100 - 1000 - 10000 $0.05	Get Quote

EBV Elektronik	BCR108WH6327XTSA1			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BCR108E6433HTMA1 Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: BCR108E6433HTMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BCR108E6433HTMA1	Tape & Reel		30 Weeks	40,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	BCR108E6433HTMA1				10,000	1 - 10 - 100 - 1000 - 10000 $0.05	Get Quote
EBV Elektronik	BCR108E6433HTMA1			31 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies BCR1080AFMAHWS BCR 108 1% 250PPM AL H WS - Waffle Pack (Alt: BCR1080AFMAHWS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BCR1080AFMAHWS	Waffle Pack		14 Weeks	250	1 - 10 - 100 - 1000 $6.18 10000 $5.86	Buy Now
Newark	BCR1080AFMAHWS	Bulk			100	1 - 10 - 100 $9.01 1000 $6.27 10000 $6.01	Buy Now
Infineon Technologies AG BCR108E6327HTSA1 Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: BCR108E6327HTSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BCR108E6327HTSA1	Tape & Reel		30 Weeks	39,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	BCR108E6327HTSA1		340			1 $0.44 10 $0.33 100 $0.28 1000 $0.13 10000 $0.09	Buy Now
Newark ()	BCR108E6327HTSA1	Cut Tape	28,000		1	1 $0.42 10 $0.42 100 $0.41 1000 $0.38 10000 $0.37	Buy Now
	BCR108E6327HTSA1	Tape & Reel	28,000		100	1 - 10 - 100 $0.41 1000 $0.38 10000 $0.37	Buy Now
	BCR108E6327HTSA1	Tape & Reel			39,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	BCR108E6327HTSA1			31 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	BCR108E6327HTSA1		145,110			1 - 10 - 100 - 1000 $0.17 10000 $0.14	Buy Now

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BCR108 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BCR108W Abstract: VSO05561 Contextual Info: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	bcr108w vso05561 eha07184 ot323 +1nov-29-2001	PDF
BCR108W Abstract: VSO05561 Contextual Info: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	bcr108w vso05561 eha07184 ot323 +1jul-16-2001	PDF
BCR108 Abstract: BCR108F BCR108L3 BCR108S SEMH10 Contextual Info: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	bcr108 /semh10 bcr108/f/l3 bcr108t/w +6bcr108s semh10 eha07184 eha07174 bcr108f bcr108l3	PDF
BCR108 Abstract: BCR108F BCR108S BCR108W BCW66 bcr1 Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	bcr108 bcr108s bcr108/f bcr108t/w +6eha07184 eha07174 bcr108f bcr108w bcw66 bcr1	PDF
marking WHs Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package	Original	bcr108 bcr108s bcr108w eha07184 +2eha07174 marking whs	PDF
BCR108S Abstract: VPS05604 Contextual Info: BCR108S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604	Original	bcr108s vps05604 eha07174 ot363 +1nov-29-2001	PDF
marking WHS sot23 Abstract: transistor marking code whs Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3	Original	bcr108 bcr108s bcr108/f/l3 bcr108t/w +6eha07184 eha07174 bcr108f bcr108l3 marking whs sot23 transistor marking code whs	PDF
BCR108 Abstract: EHA07184 Contextual Info: BCR108 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23	Original	bcr108 vps05161 eha07184 nov-29-2001	PDF
BCR108T Abstract: SC75 Contextual Info: BCR108T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75	Original	bcr108t vps05996 eha07184 jul-16-2001 +1sc75	PDF
BCR553 Abstract: BCR108W sot323 BCR133 SOT-23 cimax Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W	OCR Scan	10ma/5v bcr108 bcr108w bcr112 +10bcr116 bcr119 bcr133 bcr133w bcr135 bcr135w bcr553 bcr108w sot323 sot-23 cimax	PDF
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	bcr108 bcr108s bcr108/f bcr108t/w +3eha07184 eha07174 bcr108f	PDF
BCR108S Abstract: VPS05604 Contextual Info: BCR108S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604	Original	bcr108s vps05604 eha07174 ot363 +1jul-12-2001	PDF
BCR108 Abstract: BCR108F BCR108L3 BCR108S SEMH10 Contextual Info: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	bcr108 /semh10 bcr108/f/l3 bcr108t/w +6bcr108s semh10 eha07184 eha07174 bcr108f bcr108l3	PDF
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package	Original	bcr108 bcr108s bcr108w eha07184 +1eha07174	PDF

BCR108T Abstract: SC75 Contextual Info: BCR108T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75	Original	bcr108t vps05996 eha07184 nov-29-2001 +1sc75	PDF
BCR108 Contextual Info: BCR108 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23	Original	bcr108 vps05161 eha07184 jul-16-2001	PDF
BCR108 Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1 Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	bcr108 bcr108/f/l3 bcr108t/w bcr108s +7eha07174 eha07184 bcr108f bcr108l3 bcr108t bcr108w bcr1	PDF
Sot-363 whs Abstract: marking code WHs Contextual Info: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs	OCR Scan	bcr108s vps05604 q62702-c2414 ot-363 +2sot-363 whs marking code whs	PDF
bav99 Abstract: BAV-99S-E6327 bav99 infineon Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W	Original	bav99 bav99s bav99w bav99u +2bav-99s-e6327 bav99 infineon	PDF
sot23 s1a marking Abstract: marking code S1A sot23 Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906	Original	smbt3904 mmbt3904 smbt3904s smbt3906 +5mmbt3906 smbt3904/mmbt3904 ot363 sot23 s1a marking marking code s1a sot23	PDF
Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see	Original	bcr141 bcr141s bcr141w eha07184 +1eha07174	PDF
MARKING CODE CCB Abstract: BC847S Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see	Original	bc846s/bc846u/bc847s bc846s +3bc846u eha07178 marking code ccb	PDF
BAS16 Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U	Original	bas16 bas16w bas16-02l bas16-02v +6bas16-02w bas16-03w bas16s bas16u bas1602w bas16-07l4	PDF
marking code INFINEON Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W Contextual Info: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W	Original	bby53 bby53-02l bby53-02v bby53-02w +6bby53-03w bby53-03lrh bby53-05w marking code infineon m 21 marking code diode bar63-02v	PDF

BCR108 Search Results

BCR108 Datasheets (78)

BCR108 Price and Stock

Infineon Technologies AG BCR108WH6433XTMA1

Infineon Technologies AG BCR108WH6327XTSA1

Infineon Technologies AG BCR108E6433HTMA1

Vishay Intertechnologies BCR1080AFMAHWS

Infineon Technologies AG BCR108E6327HTSA1

BCR108 Datasheets Context Search

BCR108W

BCR108W

BCR108

BCR108

marking WHs

BCR108S

marking WHS sot23

BCR108

BCR108T

BCR553

BCR108S

BCR108

BCR108T

BCR108

BCR108

Sot-363 whs

bav99

sot23 s1a marking

MARKING CODE CCB

BAS16

marking code INFINEON