SMBT3906 Search Results

sot23 s1a marking

Abstract: marking code S1A sot23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

marking code s2a SOT23

Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

SMBT3906U

Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3904U (NPN)

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

ic power 22E

Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3904U (NPN)

SMBT3906S

Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
Contextual Info: SMBT3906S PNP Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT3904S (NPN)

sot23 s1a marking

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

H12E

Abstract: h11e ic power 22E
Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3906U (PNP)

ic power 22E

Abstract: H12E h11e EHP00761 10K275 marking S1A
Contextual Info: SMBT3904S NPN Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT3906S (PNP)

Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

transistor marking S2A

Abstract: SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3906U (PNP)

Contextual Info: SMBT3906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)330m Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.

power 22E

Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

Contextual Info: MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

SMBT3906DW1T1G

Abstract: MBT3906DW1T1G
Contextual Info: MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in

transistor marking s1a

Contextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package

Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3906U (PNP)

H12E

Abstract: SMBT3906U
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA 5 4 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 3 2
Complementary type: SMBT3904U (NPN)

1N916

Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
Contextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package

power 22E

Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

BT 815 transistor

Abstract: BT 816 transistor
Contextual Info: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code