Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BCR108F Search Results

    BCR108F Datasheets (6)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BCR108F
    Infineon Technologies Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V Original PDF 503.94KB 11
    BCR108F
    Infineon Technologies NPN Silicon Digital Transistor Original PDF 500.06KB 10
    BCR108FE6327
    Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original PDF 11
    BCR108FE6327
    Infineon Technologies Digital Transistors - R1= 2,2 kOhm , R2= 47 kOhm Original PDF 209.55KB 9
    BCR108FE6327
    Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original PDF 500.07KB 10
    BCR 108F E6327
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 Original PDF 868.39KB

    BCR108F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Contextual Info: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original
    bcr108/semh10bcr108/f/l3bcr108t/w+6bcr108ssemh10eha07184eha07174bcr108fbcr108l3 PDF

    BCR108

    Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
    Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original
    bcr108bcr108sbcr108/fbcr108t/w+6eha07184eha07174bcr108fbcr108wbcw66bcr1 PDF

    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Contextual Info: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


    Original
    sc-75b114-h7900-x-x-7600bfp620ftsfp-4+8bfr34* transistorbc848bfba892-07fbat62-07fbas40-04finfineon technologies transistor 4 ghzbar63-07fbav70f PDF

    marking WHS sot23

    Abstract: transistor marking code whs
    Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


    Original
    bcr108bcr108sbcr108/f/l3bcr108t/w+6eha07184eha07174bcr108fbcr108l3marking whs sot23transistor marking code whs PDF

    Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original
    bcr108bcr108sbcr108/fbcr108t/w+3eha07184eha07174bcr108f PDF

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Contextual Info: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original
    bcr108/semh10bcr108/f/l3bcr108t/w+6bcr108ssemh10eha07184eha07174bcr108fbcr108l3 PDF

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
    Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original
    bcr108bcr108sbcr108/f/l3bcr108t/w+6eha07184eha07174bcr108fbcr108l3bcr108tbcr108w PDF

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
    Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original
    bcr108bcr108/f/l3bcr108t/wbcr108s+7eha07174eha07184bcr108fbcr108l3bcr108tbcr108wbcr1 PDF