BCR1 Search Results

Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see

BCR12LM

Contextual Info: Preliminary Datasheet BCR12LM-12LD R07DS0983EJ0100 Rev.1.00 Dec 20, 2012 600V - 12A - Triac Medium Power Use Features •        IT RMS : 12 A VDRM : 600 V IFGTI, IRGTI, IRGT: 50 mA Viso: 1800V Insulated Type Planar Passivation Type

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR112W

Abstract: VSO05561
Contextual Info: BCR112W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR16CM

Abstract: GT 7104 bcr16* mitsubishi mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR16CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 10.5 M A X 4.5 1.3 -i-i c s ir COI TYPE NAMEVOLTAGECLASS \^ 3 .6 ± 0 .2 0.8 2.5 (D @ @ ® I • IT (RMS) . 16A

marking WPs

Abstract: BCR192T SC75
Contextual Info: BCR192T PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75

BCR10CM

Abstract: BCR10CM-12 BCR10CM-8L BCR10CM8L circuit BCR10CM BCR10CM-12L BCR10CM-8 T-46 T-47 T-48
Contextual Info: BCR10CM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Triac 10 Amperes/400-600 Volts OUTLINE DRAWING C A E L D ➃ H лG F Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an

BCR141T

Abstract: SC75
Contextual Info: BCR141T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75

Triac code T4

Abstract: bcr1am BCR1AM-12 BCR1AM8 BCR1AM-8
Contextual Info: BCR1AM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Lead-Mount Triac 1 Ampere/400-600 Volts OUTLINE DRAWING B B Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an

BCR198W

Abstract: VSO05561 MARKING WRS
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR183

Contextual Info: BCR183 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR16PM-14L

Abstract: BCR16PM-14LG PRSS0003AA-A BCR16PM14
Contextual Info: BCR16PM-14LG Triac Medium Power Use REJ03G1675-0100 Rev.1.00 Jun 04, 2008 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

BCR146W

Abstract: VSO05561
Contextual Info: BCR146W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR158

Abstract: BCR158F BCR158L3 BCR158T SEMB10
Contextual Info: BCR158./SEMB10 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR148T

Abstract: SC75
Contextual Info: BCR148T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR148T WEs Pin Configuration 1=B 2=E Package 3=C SC75

wns marking

Abstract: BCR185W VSO05561
Contextual Info: BCR185W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR133

Contextual Info: BCR133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR10CS

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING 4 Dimensions in mm 10.5 MAX ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 1.5 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX BCR10CS

BCR133

Abstract: BCR133F BCR133L3 SEMH11
Contextual Info: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching