BCR10CS Search Results

fan motor triac control

Abstract: BCR10CS-12LA PRSS0004AB-A
Contextual Info: BCR10CS-12LA Triac Medium Power Use REJ03G0339-0300 Rev.3.00 Nov 30, 2007 Features • IT RMS : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A

BCR10CS

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING 4 Dimensions in mm 10.5 MAX ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 1.5 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX BCR10CS

BCR10CS-12LB

Contextual Info: Preliminary Datasheet BCR10CS-12LB R07DS0224EJ0400 Previous: REJ03G0469-0300 Rev.4.00 Dec 14, 2010 Triac Medium Power Use Features • IT (RMS) : 10 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6  The product guaranteed maximum junction

BCR10CS-12LB

Contextual Info: BCR10CS-12LB Triac Medium Power Use The product guaranteed maximum junction temperature of 150°C REJ03G0469-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6

triac zd 103

Abstract: BCR10CS BCR10CS-12L BCR10CS-12LA BCR10CS-12LB BCR10CS-12LB-T11
Contextual Info: BCR10CS-12L Triac Medium Power Use REJ03G0339-0100 Rev.1.00 Aug.20.2004 Features • IT RMS : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGTⅢ : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline TO-220S 4 1 2, 4 3 2 1. 2. 3. 4.

BCR10CS

Abstract: BCR10CS-12L BCR10CS-12LA
Contextual Info: BCR10CS-12L Triac Medium Power Use REJ03G0339-0200 Rev.2.00 Nov.12.2004 Features • IT RMS : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline TO-220S 4 1 2, 4 3 2 1. 2. 3. 4. T1 Terminal

BCR10CS-12L

Abstract: BCR10CS-12LB BCR10CS-12LB-T11
Contextual Info: BCR10CS-12L Triac Medium Power Use The product guaranteed maximum junction temperature of 150°C REJ03G0469-0200 Rev.2.00 Nov.12.2004 Features • Non-Insulated Type • Planar Passivation Type • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note6

BCR10CS

Abstract: RFGA mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR10CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) . 10A • V d r m . 400V/600V

BCR10CS

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10CS OUTLINE DRAWING 4 Dimensions in mm ∗ 1.3 VOLTAGE CLASS

BCR10CS-12LB

Abstract: free fan dimmer circuit BCR10CS BCR10CS-12LB-T11 PRSS0004AB-A
Contextual Info: Preliminary Datasheet BCR10CS-12LB R07DS0224EJ0400 Previous: REJ03G0469-0300 Rev.4.00 Dec 14, 2010 Triac Medium Power Use Features • IT (RMS) : 10 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6  The product guaranteed maximum junction

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BCR10CS

Abstract: washing machine electric circuit drawing mitsubishi triac
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BCR10CS-12LB

Abstract: BCR10CS-12LB-T11 PRSS0004AB-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

zo405mf

Abstract: triac ZO405MF BTA16-600b application motor control SCR tyn612 BTB16-600bw application motor control BTa16-600bw application motor control BTA16-600B heating control diagram 220v dimmer light bt139 bta41-600b application BTA40-700B
Contextual Info: Thyristors and AC switches from SCRs and TRIACS to innovative devices USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF STMicroelectronics. As used herein:

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.