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    RJH60 Datasheets (60)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RJH6086BDPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 198.4W TO-3P Original PDF 8
    RJH6087BDPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 223.2W TO-3P Original PDF 8
    RJH6088BDPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 268.8W TO-3P Original PDF 8
    RJH60A01RDPD-A0#J2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 5A Original PDF 164.55KB
    RJH60A81RDPD-A0#J2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 5A Original PDF 164.42KB
    RJH60A83RDPD-A0#J2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF 164.87KB
    RJH60A83RDPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF 9
    RJH60A83RDPN-E0#T2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A TO-220AB Original PDF 2.52MB
    RJH60A83RDPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 30W TO-220FL Original PDF 9
    RJH60A85RDPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 113W LDPAK Original PDF 9
    RJH60A85RDPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 39.7W TO-220FL Original PDF 9
    RJH60D0DPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO3P Original PDF 10
    RJH60D0DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO3PFM Original PDF 10
    RJH60D0DPQ-E0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-247 Original PDF 10
    RJH60D1DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF 10
    RJH60D1DPP-E0#T2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF 121.67KB
    RJH60D1DPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 20.8W TO220FL Original PDF 10
    RJH60D2DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 63W LDPAK Original PDF 10
    RJH60D2DPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 27.2W TO220FL Original PDF 10
    RJH60D3DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 35A LDPAK Original PDF 10
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    RJH60 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation RJH60M2DPE-00#J3

    Trans IGBT Chip N-CH 600V 25A 63W 3-Pin(2+Tab) LDPAK(S)-1 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () RJH60M2DPE-00#J3 146,000 97
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    • 100 $3.89
    • 1000 $3.30
    • 10000 $3.11
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    RJH60M2DPE-00#J3 12,000 97
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    • 100 $3.89
    • 1000 $3.30
    • 10000 $3.11
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    Rochester Electronics RJH60M2DPE-00#J3 158,000 1
    • 1 -
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    • 100 $2.95
    • 1000 $2.64
    • 10000 $2.49
    		Buy Now

    Renesas Electronics Corporation RJH60D2DPP-E0#T2

    Trans IGBT Chip N-CH 600V 25A 34W 3-Pin(3+Tab) TO-220FP Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60D2DPP-E0#T2 28,199 132
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    • 1000 $2.55
    • 10000 $2.40
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    Rochester Electronics RJH60D2DPP-E0#T2 28,199 1
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    • 100 $2.28
    • 1000 $2.04
    • 10000 $1.92
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    Renesas Electronics Corporation RJH60T3DPK-M0#T2

    RJH60T3DPK-M0#T2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60T3DPK-M0#T2 1,550 157
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    • 1000 $2.15
    • 10000 $2.02
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    Rochester Electronics RJH60T3DPK-M0#T2 1,550 1
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    • 100 $1.92
    • 1000 $1.72
    • 10000 $1.62
    		Buy Now

    Renesas Electronics Corporation RJH60D1DPP-E0#T2

    Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60D1DPP-E0#T2 1,287 230
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    • 1000 $1.46
    • 10000 $1.38
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    Rochester Electronics RJH60D1DPP-E0#T2 1,287 1
    • 1 -
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    • 100 $1.31
    • 1000 $1.17
    • 10000 $1.10
    		Buy Now

    Renesas Electronics Corporation RJH60D7DPQ-E0#T2

    Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60D7DPQ-E0#T2 986 33
    • 1 -
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    • 100 $10.89
    • 1000 $9.74
    • 10000 $9.18
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    Rochester Electronics RJH60D7DPQ-E0#T2 986 1
    • 1 -
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    • 100 $8.71
    • 1000 $7.79
    • 10000 $7.34
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    Find more RJH60 price and stock on Findchips.com

    RJH60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH60T04

    Contextual Info: Preliminary Datasheet RJH60T04DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0985EJ0100 Rev.1.00 Dec 05, 2012 Features • Optimized for current resonance application  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60t04dpq-a0r07ds0985ej0100prss0003zh-ao-247a+1rjh60t04 PDF

    Contextual Info: Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0390EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


    Original     		rjh6088bdpkr07ds0390ej0100prss0004ze-a PDF

    rjh60d2

    Contextual Info: Preliminary Datasheet RJH60D2DPP-M0 600V - 12A - IGBT Application: Inverter R07DS0160EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d2dpp-m0r07ds0160ej0400prss0003af-ao-220fl+1rjh60d2 PDF

    RJH60V2BDPE-00

    Contextual Info: Preliminary Datasheet RJH60V2BDPE 600V - 12A - IGBT Application: Inverter R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60v2bdper07ds0744ej0100prss0004ae-brjh60v2bdpe-00 PDF

    Contextual Info: Preliminary Datasheet RJH60V3BDPP-M0 600V - 17A - IGBT Application: Inverter R07DS0761EJ0100 Rev.1.00 May 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60v3bdpp-m0r07ds0761ej0100prss0003af-ao-220fl PDF

    RJH60T4

    Abstract: RJH60
    Contextual Info: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		rjh60t4dpq-a0r07ds0460ej0100prss0003zh-ao-247a+2rjh60t4rjh60 PDF

    RJH60F3DPK-00

    Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		rjh60f3dpkr07ds0199ej0200prss0004ze-acurrent9044+1rjh60f3dpk-00 PDF

    Contextual Info: Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d5bdpq-e0r07ds0794ej0200prss0003ze-ao-247 PDF

    Contextual Info: Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0738EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d5dpq-e0r07ds0738ej0100prss0003ze-ao-247 PDF

    Contextual Info: Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d7dpkr07ds0165ej0400prss0004ze-a PDF

    rjh60f5

    Contextual Info: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		rjh60f5dpkr07ds0055ej0300prss0004ze-acurren9044+1rjh60f5 PDF

    Contextual Info: Preliminary Datasheet RJH60A81RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1092EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage


    Original     		rjh60a81rdpd-a0r07ds1092ej0100prss0004zk-ao-252a PDF

    rjh60f5

    Abstract: RJH60F5DPK REJ03G1836-0100 RJH60F
    Contextual Info: Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P


    Original     		rjh60f5dpkrej03g1836-0100prss0004ze-arjh60f5+1rjh60f PDF

    RJH60D1

    Abstract: RJH60D1DPP-M0 PRSS0003AF-A RJH60
    Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0200 Previous: REJ03G1839-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d1dpp-m0r07ds0158ej0200rej03g1839-0100prss0003af-a+4o-220flrevers9044rjh60d1rjh60 PDF

    RJH60

    Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
    Contextual Info: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d0dpmr07ds0156ej0100prss0003za-aem9044+3rjh60rjh60d0rjh60d0dpm-00 PDF

    RJH60F3

    Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
    Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		rjh60f3dpkr07ds0199ej0100prss0004ze-arjh60f3+3sc-65rjh60frjh60f3dpk-00 PDF

    RJH60

    Abstract: PRSS0003ZA-A rjh60d
    Contextual Info: Preliminary Datasheet RJH60D6DPM Silicon N Channel IGBT Application: Inverter R07DS0175EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d6dpmr07ds0175ej0200prss0003za-aem9044+2rjh60rjh60d PDF

    RJH60M1DPE

    Contextual Info: Preliminary Datasheet RJH60M1DPE 600V - 8A - IGBT Application: Inverter R07DS0529EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60m1dper07ds0529ej0300prss0004ae-b PDF

    Contextual Info: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage


    Original     		rjh60a85rdper07ds0809ej0200prss0004ae-b PDF

    RJH60D6DPK

    Contextual Info: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d6dpkr07ds0164ej0400prss0004ze-a PDF

    RJH60D1DPE

    Contextual Info: Preliminary Datasheet RJH60D1DPE 600V - 10A - IGBT Application: Inverter R07DS0157EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d1dper07ds0157ej0400prss0004ae-b PDF

    Contextual Info: Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application: Inverter R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d6dpmr07ds0175ej0300prss0003za-a PDF

    Contextual Info: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


    Original     		rjh6087bdpkr07ds0389ej0100prss0004ze-a PDF

    Contextual Info: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		rjh60d5dpmr07ds0174ej0200prss0003za-a PDF