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    RJH60 Search Results

    RJH60 Datasheets (60)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RJH6086BDPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 198.4W TO-3P Original PDF 8
    RJH6087BDPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 223.2W TO-3P Original PDF 8
    RJH6088BDPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 268.8W TO-3P Original PDF 8
    RJH60A01RDPD-A0#J2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 5A Original PDF 164.55KB
    RJH60A81RDPD-A0#J2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 5A Original PDF 164.42KB
    RJH60A83RDPD-A0#J2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF 164.87KB
    RJH60A83RDPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF 9
    RJH60A83RDPN-E0#T2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A TO-220AB Original PDF 2.52MB
    RJH60A83RDPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 30W TO-220FL Original PDF 9
    RJH60A85RDPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 113W LDPAK Original PDF 9
    RJH60A85RDPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 39.7W TO-220FL Original PDF 9
    RJH60D0DPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO3P Original PDF 10
    RJH60D0DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO3PFM Original PDF 10
    RJH60D0DPQ-E0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-247 Original PDF 10
    RJH60D1DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF 10
    RJH60D1DPP-E0#T2
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF 121.67KB
    RJH60D1DPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 20.8W TO220FL Original PDF 10
    RJH60D2DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 63W LDPAK Original PDF 10
    RJH60D2DPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 27.2W TO220FL Original PDF 10
    RJH60D3DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 35A LDPAK Original PDF 10
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    RJH60 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation RJH60M2DPE-00#J3

    Trans IGBT Chip N-CH 600V 25A 63W 3-Pin(2+Tab) LDPAK(S)-1 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () RJH60M2DPE-00#J3 146,000 97
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    • 100 $3.89
    • 1000 $3.30
    • 10000 $3.11
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    RJH60M2DPE-00#J3 12,000 97
    • 1 -
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    • 100 $3.89
    • 1000 $3.30
    • 10000 $3.11
    		Buy Now

    Renesas Electronics Corporation RJH60D2DPP-E0#T2

    Trans IGBT Chip N-CH 600V 25A 34W 3-Pin(3+Tab) TO-220FP Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60D2DPP-E0#T2 28,199 132
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    • 1000 $2.55
    • 10000 $2.40
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    Renesas Electronics Corporation RJH60T3DPK-M0#T2

    RJH60T3DPK-M0#T2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60T3DPK-M0#T2 1,550 157
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    • 1000 $2.15
    • 10000 $2.02
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    Renesas Electronics Corporation RJH60D1DPP-E0#T2

    Trans IGBT Chip N-CH 600V 20A 30W 3-Pin(3+Tab) TO-220FP Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60D1DPP-E0#T2 1,537 230
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    • 1000 $1.46
    • 10000 $1.38
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    Renesas Electronics Corporation RJH60D7DPQ-E0#T2

    Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH60D7DPQ-E0#T2 986 33
    • 1 -
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    • 100 $10.89
    • 1000 $9.74
    • 10000 $9.18
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    Find more RJH60 price and stock on Findchips.com

    RJH60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A) PDF

    Contextual Info: Datasheet RJH60M0DPQ-E0 R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time 8 s typ. • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60M0DPQ-E0 R07DS1085EJ0200 PRSS0003ZE-A O-247) PDF

    Contextual Info: Preliminary Datasheet RJH60M6DPQ-E0 600V - 40A - IGBT Application: Inverter R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 Features • Short circuit withstand time 8 s typ. • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60M6DPQ-E0 R07DS1088EJ0100 PRSS0003ZE-A O-247) PDF

    Contextual Info: Preliminary Datasheet RJH60A01RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage


    Original     		RJH60A01RDPD-A0 R07DS1091EJ0100 PRSS0004ZK-A O-252A) PDF

    RJH60F7

    Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0328EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F7DPQ-A0 R07DS0328EJ0100 PRSS0003ZH-A O-247A) RJH60F7 PDF

    RJH60D7DPQ-E0

    Contextual Info: Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7DPQ-E0 R07DS0740EJ0100 PRSS0003ZE-A O-247) RJH60D7DPQ-E0 PDF

    Contextual Info: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A to9044 PDF

    Contextual Info: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPM R07DS0174EJ0200 PRSS0003ZA-A PDF

    Contextual Info: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A curren9044 PDF

    Contextual Info: Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter R07DS0759EJ0100 Rev.1.00 May 25, 2011 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60V1BDPP-M0 R07DS0759EJ0100 PRSS0003AF-A O-220FL) PDF

    Contextual Info: Preliminary Datasheet RJH60D6DPQ-E0 600V - 40A - IGBT Application: Inverter R07DS0739EJ0200 Rev.2.00 Jun 20, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPQ-E0 R07DS0739EJ0200 PRSS0003ZE-A O-247) PDF

    Contextual Info: Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60M1DPP-M0 R07DS0528EJ0300 PRSS0003AF-A O-220FL) PDF

    Contextual Info: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0400 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJH60M1DPE 600V - 8A - IGBT Application: Inverter R07DS0529EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60M1DPE R07DS0529EJ0300 PRSS0004AE-B PDF

    RJH60A83RDPE-00

    Contextual Info: Preliminary Datasheet RJH60A83RDPE 600V - 10A - IGBT Application: Inverter R07DS0806EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage


    Original     		RJH60A83RDPE R07DS0806EJ0200 PRSS0004AE-B RJH60A83RDPE-00 PDF

    Contextual Info: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F0DPQ-A0 R07DS0324EJ0200 PRSS0003ZH-A O-247A) PDF

    Contextual Info: Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching R07DS0327EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F6DPQ-A0 R07DS0327EJ0200 PRSS0003ZH-A O-247A) PDF

    Contextual Info: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPK R07DS0164EJ0400 PRSS0004ZE-A PDF

    RJH60D0

    Abstract: RJH60 PRSS0004ZE-A SC-65
    Contextual Info: Preliminary Datasheet RJH60D0DPK R07DS0155EJ0200 Previous: REJ03G1845-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPK R07DS0155EJ0200 REJ03G1845-0100) PRSS0004ZE-A di9044 RJH60D0 RJH60 PRSS0004ZE-A SC-65 PDF

    rjh60d2

    Abstract: RJH60 rjh60d
    Contextual Info: Preliminary Datasheet RJH60D2DPE R07DS0159EJ0200 Previous: REJ03G1842-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D2DPE R07DS0159EJ0200 REJ03G1842-0100) PRSS0004AE-B t9044 rjh60d2 RJH60 rjh60d PDF

    RJH60F7

    Abstract: RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65
    Contextual Info: Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7ADPK REJ03G1837-0200 PRSS0004ZE-A Tc9044 RJH60F7 RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65 PDF

    RJH60F4

    Abstract: RJH60F4DPK RJH60F PRSS0004ZE-A SC-65
    Contextual Info: Preliminary Datasheet RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1835-0200 Rev.2.00 Jun 17, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F4DPK REJ03G1835-0200 PRSS0004ZE-A RJH60F4 RJH60F4DPK RJH60F PRSS0004ZE-A SC-65 PDF

    Contextual Info: Preliminary Datasheet RJH60D6DPQ-E0 600V - 40A - IGBT Application: Inverter R07DS0739EJ0200 Rev.2.00 Jun 20, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPQ-E0 R07DS0739EJ0200 PRSS0003ZE-A O-247) PDF