RJH60 Search Results

RJH60T04

Contextual Info: Preliminary Datasheet RJH60T04DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0985EJ0100 Rev.1.00 Dec 05, 2012 Features • Optimized for current resonance application  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0390EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage

rjh60d2

Contextual Info: Preliminary Datasheet RJH60D2DPP-M0 600V - 12A - IGBT Application: Inverter R07DS0160EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

RJH60V2BDPE-00

Contextual Info: Preliminary Datasheet RJH60V2BDPE 600V - 12A - IGBT Application: Inverter R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60V3BDPP-M0 600V - 17A - IGBT Application: Inverter R07DS0761EJ0100 Rev.1.00 May 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

RJH60T4

Abstract: RJH60
Contextual Info: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60F3DPK-00

Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0738EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

rjh60f5

Contextual Info: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Contextual Info: Preliminary Datasheet RJH60A81RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1092EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage

rjh60f5

Abstract: RJH60F5DPK REJ03G1836-0100 RJH60F
Contextual Info: Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P

RJH60D1

Abstract: RJH60D1DPP-M0 PRSS0003AF-A RJH60
Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0200 Previous: REJ03G1839-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60

Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
Contextual Info: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

RJH60F3

Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package

RJH60

Abstract: PRSS0003ZA-A rjh60d
Contextual Info: Preliminary Datasheet RJH60D6DPM Silicon N Channel IGBT Application: Inverter R07DS0175EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)

RJH60M1DPE

Contextual Info: Preliminary Datasheet RJH60M1DPE 600V - 8A - IGBT Application: Inverter R07DS0529EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

RJH60D6DPK

Contextual Info: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)

RJH60D1DPE

Contextual Info: Preliminary Datasheet RJH60D1DPE 600V - 10A - IGBT Application: Inverter R07DS0157EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application: Inverter R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage

Contextual Info: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)