R07DS0199EJ0200 Search Results
R07DS0199EJ0200 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RJH60F3DPK-00Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
Original |
rjh60f3dpkr07ds0199ej0200prss0004ze-acurrent9044+1 | |
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Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
Original |
rjh60f3dpkr07ds0199ej0200prss0004ze-a |