RJH60F3DPK Search Results
RJH60F3DPK Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RJH60F3DPK-00#T0 | Renesas Electronics | IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P | Original | 8 |
RJH60F3DPK Price and Stock
Renesas Electronics Corporation RJH60F3DPK-00-T0Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RJH60F3DPK-00-T0 | 576 |
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RJH60F3DPK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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RJH60F3DPK-00Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
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rjh60f3dpkr07ds0199ej0200prss0004ze-acurrent9044+1 | |
RJH60F3
Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
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rjh60f3dpkr07ds0199ej0100prss0004ze-arjh60f3+3 | |
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Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
Original |
rjh60f3dpkr07ds0199ej0200prss0004ze-a | |
RJH60F7
Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
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rjh608rjh60f0212/100/in-house/lah/jerjh60f7+7 |