BCR112 Search Results
BCR112 Datasheets (34)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BCR112 | Infineon Technologies | TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 | Original | 209.2KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112 | Infineon Technologies | R1=4.7 k ? R2=4.7 k ? | Original | 42.85KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112 | Infineon Technologies | Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 4.7 kOhm; R2: 4.7 k?; hFE (min): 20.0; Vi (on) (min): 1.0 2mA / 0.3V; | Original | 118.35KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112 | Infineon Technologies | NPN Silicon Digital Transistor | Original | 42.51KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 98.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 35.1KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112E6327 | Infineon Technologies | TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R | Original | 209.2KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112E6327 | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN DGTL AF SOT-23 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112E6327HTSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3 | Original | 837.09KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112F | Infineon Technologies | NPN Silicon Digital Transistor | Original | 209.19KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112FE6327 | Infineon Technologies | TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R | Original | 209.2KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112FE6327 | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR 112F E6327 | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 | Original | 837.09KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112L3 | Infineon Technologies | NPN Silicon Digital Transistor | Original | 209.19KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112L3E6327 | Infineon Technologies | TRANS DIGITAL BJT NPN 50V 100MA 3TSLP-3-4 T/R | Original | 209.2KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112L3E6327 | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR 112L3 E6327 | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSLP-3 | Original | 208.97KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112T | Infineon Technologies | NPN Silicon Digital Transistor | Original | 209.19KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR112TE6327 | Infineon Technologies | Digital Transistors - R1=4.7 kOhm, R2=4.7 kOhm | Original | 209.19KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR112 Price and Stock
Infineon Technologies AG BCR112WH6327XTSA1Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCR112WH6327XTSA1 | 186,000 | 6,757 |
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Buy Now | ||||||
| BCR112WH6327XTSA1 | 48,338 | 6,757 |
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Buy Now | |||||||
| BCR112WH6327XTSA1 | 36,000 | 6,757 |
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| BCR112WH6327XTSA1 | 17,600 | 6,757 |
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BCR112WH6327XTSA1 | 287,938 | 1 |
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BCR112WH6327XTSA1 | 30,000 | 12,000 |
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BCR112WH6327XTSA1 | 6,736 |
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Get Quote | |||||||
Infineon Technologies AG BCR112E6327HTSA1Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: BCR112E6327HTSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCR112E6327HTSA1 | Tape & Reel | 30 Weeks | 39,000 |
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BCR112E6327HTSA1 | Tape & Reel | 264,587 | 100 |
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| BCR112E6327HTSA1 | Cut Tape | 264,587 | 5 |
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| BCR112E6327HTSA1 | Tape & Reel | 39,000 |
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BCR112E6327HTSA1 | 6,907 |
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| BCR112E6327HTSA1 | 6,907 |
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BCR112E6327HTSA1 | 1,687 | 1 |
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BCR112E6327HTSA1 | 3,000 | 31 Weeks | 3,000 |
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BCR112E6327HTSA1 | 12,731 |
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Get Quote | |||||||
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BCR112E6327HTSA1 | 76,690 |
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Buy Now | |||||||
Infineon Technologies AG BCR112WH6327Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCR112WH6327 | 8,966 |
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Get Quote | |||||||
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BCR112WH6327 | 6,000 |
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Get Quote | |||||||
Infineon Technologies AG BCR112W-E6327PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-323 (Also Known As: BCR112W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCR112W-E6327 | 4,800 |
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Buy Now | |||||||
| BCR112W-E6327 | 4,800 |
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Buy Now | ||||||||
Infineon Technologies AG BCR112-E6327100 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BCR112-E6327 | 2,506 |
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Buy Now | |||||||
| BCR112-E6327 | 2,506 |
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BCR112 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BCR112W
Abstract: VSO05561
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Original |
bcr112wvso05561eha07184ot323+1 | |
BCR112W
Abstract: VSO05561 WFs transistor
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Original |
bcr112wvso05561eha07184ot323+2 | |
WFs transistor
Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
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Original |
bcr112bcr112/f/l3bcr112t/wbcr112u+8 | |
WFs transistor
Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
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Original |
bcr112bcr112/f/l3bcr112t/wbcr112u+10 | |
BCR553
Abstract: BCR108W sot323 BCR133 SOT-23 cimax
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OCR Scan |
10ma/5vbcr108bcr108wbcr112+10 | |
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Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see |
Original |
bcr112bcr112ubcr112/f/l3bcr112t/w+3 | |
BCR112Contextual Info: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23 |
Original |
bcr112vps05161eha07184jul-16-2001 | |
BCR112Contextual Info: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23 |
Original |
bcr112vps05161eha07184nov-29-2001 | |
BCR108W
Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
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Original |
bcr112bcr112ubcr112/fbcr112w+8 | |
WFs transistor
Abstract: WFs SOT23
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Original |
bcr112bcr112/f/l3bcr112t/wbcr112u+7 | |
WFs transistorContextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 |
Original |
bcr112bcr112weha07184ot323+3 | |
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Contextual Info: &*< :// 5HFHLYH 'RZQFRQYHUWHU ,& IRU *+] • Fully Integrated Two-Stage Preamplifier, Mixer, LO-Buffer, IF Amplifier and two Switched Attenuators • Very high Input-IP3 of typical +5 dBm at max. gain and +28 dBm at min. gain • • • • • Very low LO-Power demand of typ. -5 to 0 dBm |
Original |
qs9000iso9001 | |
smd marking gc
Abstract: smd marking code vd T1006 Q62702-G98 CGY 8 pin rxic
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Original |
mw-16q62702-g98eht08785gpw05969+5 | |
74XX32
Abstract: transistor B c167 p61 smd transistor SAC-C167 C1167 transistor c167 smd transistor P63 SABC16X 74HC32 BCR112
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Original |
c16x-family74xx32transistor b c167p61 smd transistor+7 | |
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
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Original |
od-80od123/323ot-23ot346+16 | |
w 3425 nf
Abstract: smd code book BCR112 3425 nf smd marking code vd Q62702-G82 SMD MARKING CODE L6 smd marking AB 6 PIN smd marking code book MW-16
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Original |
mw-16q62702-g82bcr112eht08776+8 | |
74LX1G125
Abstract: BCR112 F525L SD10 STW8009 SD524
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Original |
74lx1g125bcr112f525lsd10+2 | |
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
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Original |
02cz1002cz1102cz1202cz13+15 | |
BFP620F
Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
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Original |
sc-75b114-h7900-x-x-7600bfp620ftsfp-4+8 | |
MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
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Original |
bas32bas45bav105ll4148+15 | |
MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
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Original |
bzv49bzv55500mwbas32+16 | |
SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
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Original |
bzv49bzv55500mwbas32+16 | |
transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
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Original |
ot323bc818wmun5131t1bc846a+12 | |
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Contextual Info: CGY360 W L L R e ceive D o w n c o n v e rte r 1C fo r 3 .5G H z • Fully Integrated Two-Stage Preamplifier, Mixer, LO-Buffer, IF Amplifier and two Switched Attenuators • Very high lnput-IP3 of typical +5 dBm at max. gain and +28 dBm at min. gain • Very low LO-Power demand of typ. -5 to 0 dBm |
OCR Scan |
cgy360mw-16s9000is09001 | |