|
BCR133
|
|
Infineon Technologies
|
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 10.0 k?; hFE (min): 30.0; Vi (on) (min): 1.0 2mA / 0.3V; |
Original |
PDF
|
144.91KB |
12 |
|
BCR133
|
|
Infineon Technologies
|
R1=10 k ? R2=10 k ? |
Original |
PDF
|
42.5KB |
4 |
|
BCR133
|
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
|
BCR133
|
|
Siemens
|
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
|
36.52KB |
4 |
|
BCR133
|
|
Unknown
|
Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
|
35.1KB |
1 |
|
BCR133
|
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
98.69KB |
1 |
|
BCR 133 B6327
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 |
Original |
PDF
|
868.49KB |
|
|
BCR133B6327
|
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 |
Original |
PDF
|
|
11 |
|
BCR133E6327
|
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 |
Original |
PDF
|
|
11 |
|
BCR133E6327HTSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 |
Original |
PDF
|
868.49KB |
|
|
BCR133E6393
|
|
Infineon Technologies
|
SMALL SIGNAL BIPOLAR TRANSISTOR |
Original |
PDF
|
892.23KB |
|
|
BCR133E6393HTSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN SOT23 |
Original |
PDF
|
868.49KB |
|
|
BCR133E6433
|
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN DGTL AF SOT-23 |
Original |
PDF
|
|
11 |
|
BCR133E6433HTMA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3 |
Original |
PDF
|
868.49KB |
|
|
|
|
BCR133F
|
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
Original |
PDF
|
499.56KB |
10 |
|
BCR 133F B6327
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 |
Original |
PDF
|
868.49KB |
|
|
BCR133FB6327
|
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 |
Original |
PDF
|
|
11 |
|
BCR 133F E6327
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 |
Original |
PDF
|
868.49KB |
|
|
BCR133FE6327
|
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 |
Original |
PDF
|
|
11 |
|
BCR133FE6327
|
|
Infineon Technologies
|
Digital Transistors - R1= 10 kOhm , R2= 10 kOhm |
Original |
PDF
|
209.07KB |
9 |
