BSX45 Search Results

Transistor BSX 47-10

Abstract: Transistor BSX 45-10 7CW Transistors S1553 7CW 02 Q60218-X45-V6 BSX 45-10 BSX45 BSX47 Transistor NF 45-10
Contextual Info: IS I E G 2SC D • öSBSfciQS DDQ4ÖQ7 i NPN Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~SIEMENS AKTIENGESELLSCHAF BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

BSX47

Contextual Info: BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series types are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications.

bsx47

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

BSX45

Abstract: BSX46 BSX47
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

BSX45

Abstract: Z823 BSX46 BSX47 marx generator silicon planar epitaxial transistors
Contextual Info: N AMER PHI LIP S/DISCRETE bTE J> m bbSBTBl □□57cllci Sb7 M IAPX BSX45 to 47 Jl SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes w ith the collector connected to the case. These transistors are intended fo r general industrial applications.

BSX46

Abstract: BSX45 BSX47
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS BSX45 BSX46 BSX47 TO-39 Metal Can Package AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

bsx46

Abstract: BSX45 bsx45-16 BSX46-10 bsx4616 bsx47 Transistor BSX45 BSX46-16 transistor BSX47-10 transistor BSX47
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • General industrial applications.

bsx46

Abstract: bsx45
Contextual Info: 3GE D • 7 ^5 ^ 3 7 ooaiobs 3 ■ /IT SGS-THOMSON ^ 7# . S G BSX45 BSX46 S-THOMSON MEDIUM POWER AMPLIFIERS DESCRIPTION The BSX45 and BSX46 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in medium power general industrial ap­

BSX45

Contextual Info: BSX45 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

G-1872

Abstract: bs 1872 BSX45 BSX46 G1872
Contextual Info: BSX45 BSX 46 SILICON PLANAR NPN MEDIUM POWER AM PLIFIERS The BSX 45 and BSX 46 are silicon planar epitaxial NPN transistors In Jedec T O -39 metal case, Intended fo r use In medium power general industrial applications. ABSOLUTE M A XIM U M RATINGS BSX 45

BSX47

Abstract: 2N3019 MOTOROLA BSX45 BSX45-6 2N3019 BSX46 BSX47-6
Contextual Info: M O T O R O L A SC 12E D g XSTRS/R F b3b?aS4 QOflbSOM 3 | BSX45-6, -10, -16 thru MAXIMUM RATINGS R atin g S ym b ol BSX BSX BSX 4 5 46 47 C ollector-E m itter Voltage VCEO 40 C ollector-E m itter Voltage VCES 8 0 100 120 Em itter-Base Voltage 60 80 U n it

BSX45

Abstract: BSX46 BSX47
Contextual Info: Data Sheet H BSX45, -10, -16 BSX46, -10, -16 BSX47, -10, TM C od i 1i mt tru aV f lll V NPN SILICON TRANSISTORS S e m ic o n d u c to r C orp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors

BSX45-16

Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 80.0 V NO. BSX45-16 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 7.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)

BSX45

Abstract: BSX46 BSX66
Contextual Info: BSX45 BSX 46 SILICON PLANAR NPN MEDIUM POWER AM PLIFIER S The BSX 45 and BSX 46 are silicon planar epitaxial NPN transistors in Je d ecT O -39 metal case, intended fo r use in m edium power general industrial applications. ABSOLUTE M A X IM U M RATINGS Vces

BSX46-16

Abstract: BSX46 BSX45 BSX45-10 BSX46-10 BSX47 Transistor BSX45 BSX45-16 BSX47-10 bsx4616
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN medium power transistors

Transistor BSX 47-10

Abstract: Transistor BSX 46-10 K2175
Contextual Info: SIEG 2SC D • öSBSfciQS DDQ4ÖQ7 ! N P N Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~ S I E M E N S AKTIE NG ESELLSCHA F BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

Contextual Info: N AUER PHILIPS/DISCRETE b'lE ]> □ □27'UT 5b7 • APX bbS3T31 BSX45 to 47 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.

Contextual Info: BSX45 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BSX45 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

BSX45

Abstract: BSX46 BSX47
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS BSX45, BSX46 BSX47 TO-39 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION

bsy85

Abstract: BSW54 BSW65 MA8003 BSY52 BSY86 bsy90 CL168 TO-92B BSW61
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S >• TYPE NO. OC < -1 o a. H FE V C E S A T f T min Cob C O M PLE­ max max M EN TA R Y (MHz) (pF) TYPE CASE Pd (mW) 'c (A ) V C EO (V ) min 0.8 0.8 0.8 0.8 0.8 1 40 30 30 40 40 80 100 40 100

BC109 MOTOROLA

Abstract: N3053 2N2219 MOTOROLA 2N3019 motorola 2n2484 complementary bc140 bcy59 motorola 2N2222A motorola BC107 2N1711 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty