PH23 Search Results

Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors

ph2369

Contextual Info: PH2369 TO-92 Transistor NPN TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features — Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage

PH2369

Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2369; PH2369A FEATURES PINNING • Low current max 200 mA PIN • Low voltage (max. 15 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector • High-speed switching. DESCRIPTION

transistor power 5w

Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
Contextual Info: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

PH2369

Abstract: SC-43A PH2369 Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2369 NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor PH2369 FEATURES PINNING • Low current max. 200 mA

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

PH2369

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors PH2369 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. BASE Value Units VCBO Collector-Base Voltage

b 595 transistor

Abstract: 73c50 PH2323-1 el841 transistor Common Base configuration 2S425 EL84 transistor b 595
Contextual Info: 3 .- an AMP comDanv CW Power Transistor, 2.3 GHz 1W PH2323-1 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

transistor power rating 5w

Contextual Info: A fa C pM m an A M P com pany C>N Power Transistor, 5W 2.3 GHz PH2323-5 V2.00 Features • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n C lass C O peratio n In terd igitated G e o m e try D iffu sed Em itter B allastin g R esistors

Contextual Info: ßrtkCOM w a n A M P com pany C\N Power Transistor, 14W 2.3 GHz PH2323-14 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ransistor C o m m o n Base C on figuration Class C O p era tio n Interdigitated G eo m etry G o ld M etalization System

ph2369

Abstract: ph2369a
Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2369; PH2369A PINNING FEATURES • Low current max. 200 mA DESCRIPTION PIN • Low voltage (max. 15 V). 1 APPLICATIONS emitter 2 base 3 collector • High-speed switching. DESCRIPTION

C0033

Abstract: 2052-5636-02 ATC100A PH2323-14 6010.5 T50M50 VCC28
Contextual Info: ArfKO‘A W an A M P company CW Power Transistor, 14W 2.3 GHz PH2323-14 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Gold Metalization System Hermetic Metal/Ceramic Package

Contextual Info: Afaœm m an A M P com pany C\N Power Transistor, 3.5W 2.3 GHz PH2323-3 Features • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • C la s s C O p e r a tio n • ln te r d ig ita te d G e o m e tr y

NPN microwave power transistor 865

Abstract: omni spectra sma ATC100A PH2323-1 Noryl 1075
Contextual Info: PH2323-1 CW Power Transistor 1W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • NPN silicon microwave power transistor Common base configuration Class C operation Interdigitated geometry Diffused emitter ballasting resistors

transistor 911

Contextual Info: m an A M P com pany CW Bipolar Power Transistor, 4W 2.3 GHz PH2323-4 Features • NPN Silicon M icrow ave Pow er Transistor • C om m on Base C on figu ration • C lass C O p eratio n • • • • Interdigitated G eo m etry D iffused Em itter B allasting Resistors

PH2323-14

Contextual Info: PH2323-14 CW Power Transistor 14W, 2.3 GHz M/A-COM Products Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Common base configuration Class C operation Interdigitated geometry Gold metallization system Hermetic metauceramic package

Contextual Info: DISCRETE SEMICONDUCTORS PH2369 NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PH2369 FEATURES PINNING • Low curren t max. 200 mA

PH2323-3

Abstract: NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor
Contextual Info: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package

transistor c s z 44 v

Contextual Info: 4JÄ C O M w an A M P com pany CW Power Transistor, 1W 2.3 GHz PH2323-1 V2.00 Features • • • • • • • NPN S ilicon M icrow ave P o w er Transistor C o m m o n Base C on figuration C lass C O p eratio n Interdigitated G eo m etry D iffused Em itter B allasting Resistors

OMNI SPECTRA

Abstract: Rogers 6010.5 ATC100A PH2323-3 882 transistor
Contextual Info: PH2323-3 CW Power Transistor 3.5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN Silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors

882 transistor

Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
Contextual Info: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors

PH2369

Abstract: SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 PH2369 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 27 2004 Oct 11 NXP Semiconductors Product data sheet NPN switching transistor PH2369 FEATURES PINNING • Low current max. 200 mA

APX-100

Abstract: l4 tam PH2369 Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bbSB'm 0020031 fllB PH2369 I SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended fo r high-speed switching applications. QUICK REFERENCE D A T A Collector-base voltage open emitter

SH13

Abstract: SH133 svr-12 right angle 10 pin pcb header connector 3.81mm svr12 41A 731 STLZ950 AKZ300 AK351 SF185
Contextual Info: Altech is pleased to announce a new, more extensive printed circuit board terminal block line. This line offers the standard single and double level fixed and pluggable terminal blocks in metric and US pin spacings. However, this product line goes beyond our