ATC100A Search Results

DM74SL04

Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Contextual Info: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

K 1358 fet transistor

Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

Transistor motorola 513

Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Contextual Info: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed

L-Band 1200-1400 MHz

Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description

Contextual Info: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.

cdma Booster schematic

Abstract: GRM36cog270J50 GRM36cog330j50 AWT1921 AWT1921S11 SSOP-28 ATC100A4R7CW150X
Contextual Info: AWT1921S11 A Integrated High Power Amp 1610 MHz Advanced Product information Rev 4 DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. The device has been specifically designed for fixed satellite access

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

Contextual Info: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

ATC100A101JW

Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
Contextual Info: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology

GRM36cog270J50

Abstract: GRM36X7R331K50
Contextual Info: AWT 1922 Integrated High Power Amp 1900 MHz Advanced Product information Rev 3 DESCRIPTION The AWT1922 is a four stage monolithic amplifier for use in communication systems, which require high gain and output intercept point. This device has been specifically designed for PCS multi carrier and

atc100a

Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509
Contextual Info: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: A t f .MOM m an A M P com pany Radar Pulsed Power Transistor, 20W, lOO^is Pulse, 10% Duty 2.7-3.1 GHz PH2731-20M V2.00 900 £2 bb Features • • • • • • • • 650 C lb 51) NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C on fig u ratio n

6010.5

Abstract: TT50M50A a2024a
Contextual Info: L3E D 5b422D5 0000031 OMT HAP MICROW AVE PULSED POWER TRANSISTOR PH1214-2.0M PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 - 1 . 4 GHz Operation Common Base Configuration Gold Metallization System

2052-5636-02

Contextual Info: m an A M P com pany Radar Pulsed Power Transistor, 20W, 100^is Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-20M Features • NI’ N S ilic o n M ic r o w a v e P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la ss C O p e r a t io n