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    MRFG35010ANT1 Search Results

    MRFG35010ANT1 Datasheets (2)

    Freescale Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRFG35010ANT1
    		Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANSISTOR RF FET 3.5GHZ PLD-1.5 Original PDF 25
    MRFG35010ANT1
    		Freescale Semiconductor Gallium Arsenide PHEMT Original PDF 251.37KB 12
    SF Impression Pixel

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    NXP Semiconductors

    NXP Semiconductors MRFG35010ANT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    MRFG35010ANT1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RO4350B

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B PDF

    atc 17-33

    Abstract: MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35010AN MRFG35010ANT1 atc 17-33 MRFG35010ANT1 5V piezo 9mm X 12mm IRL 724 N A113 A114 A115 AN1955 C101 JESD22 PDF

    Contextual Info: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		MMG3014N MRFG35010AN PDF

    A113

    Abstract: MRFG35010ANT1 MRFG35010NT1 100A100JP150X
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		MRFG35010N MRFG35010NT1 A113 MRFG35010ANT1 MRFG35010NT1 100A100JP150X PDF