RO4350B Search Results

Contextual Info: TQP3M6005 Mid Band Dual LNA 1700-2000 MHz Applications •  Base Station receivers Tower-mounted amplifiers 16-pin 4x4mm leadless SMT package Product Features       Functional Block Diagram 0.36 dB Noise Figure (single channel) 1700-2000 MHz

Rogers RO4350B microstrip

Contextual Info: GX03 Ultra Broadband Capacitor ADVANTAGES APPLICATIONS • Ultra Broadband performance • Ultra Low Insertion Loss • Semi Conductor Data Communications Customers • X7R Characteristics • Receiver Optical Sub-Assemblies • Excellent Return Loss • Transimpedance Amplifier

Contextual Info: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

303 2170 001

Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.

Contextual Info: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal

Contextual Info: Preliminary Specification PE45450 tio • UltraCMOS monolithic drop-in solution    with no external bias components reducing design complexity Adjustable power limiting threshold from +25 dBm to +35 dBm Fast response and recovery time of 1 ns

Contextual Info: Product Specification PE45140 UltraCMOS Power Limiter 20 MHz–2 GHz Product Description The PE45140 is a HaRP technology-enhanced RF power limiter designed for use in tactical and military communications receivers, land mobile radio and other high performance power limiting applications.

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to

C5750X7S2A106MT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz

TB235

Contextual Info: Juune 11, 20144 T TF235 Frequenccy=30-5122 MHz Pout=100W Gain= = 19-21.5 dB Vd ds=28Vdc Id dq=1.2A Efficiency= 48-551% L LR2401 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m June 11, 2014 180.0 22.5 135.0

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed