RO4350B Search Results

Contextual Info: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

SEMICONDUCTOR J601

Abstract: Soshin GSC362 J295 A114 A115 AN1977 AN1987 C101 JESD22 MDE6IC9120GNR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage

N/A9M07

Contextual Info: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from

Contextual Info: Preliminary Specification PE45140 UltraCMOS Power Limiter 20 MHz–2 GHz ca tio n Product Description The PE45140 is a HaRP technology-enhanced RF power limiter designed for use in tactical and military communications receivers, land mobile radio and other

ATC100B4R7CT500XT

Abstract: J376
Contextual Info: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

RO4350B

Abstract: RO4350B DATA SHEET linear 2110 GPS 112 MD7IC21100N Rogers RO4350B A114 A115 AN1977 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev. 0, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage

Microwave schottky Diode mixer

Abstract: RESISTOR 0201 footprint dimension SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER zero bias diode ghz detector 0201 footprint Rogers 4350B
Contextual Info: DATA SHEET SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Applications • Sensitive RF and microwave detector circuits • Sampling and mixer circuits • High volume wireless systems • WiFi and mobile devices • Low-noise receivers for high sensitivity ID tags

Contextual Info: TGS2355 0.5-6 GHz High Power GaN Switch Applications • High Power Switching Product Features Functional Block Diagram Frequency Range: 0.5 - 6 GHz Insertion Loss: < 1.3 dB Power Handling: 100 W Isolation: 40 dB typical Control Voltages: 0 V/-40 V from either side of

HFCN-8400

Contextual Info: Ceramic HFCN-8400+ HFCN-8400 High Pass Filter Ÿ  WR  0+] Features Maximum Ratings R& WR R& 2SHUDWLQJ 7HPSHUDWXUH R 6WRUDJH 7HPSHUDWXUH R  & WR  & R : PD[ DW  & 5 3RZHU ,QSXW 3DVVEDQG UDWLQJ GHUDWH OLQHDUO\ WR : DW ƒ& DPELHQW

Rogers RO4350B

Abstract: ro4350b PL-158 FV1206-1 72-5011
Contextual Info: Ceramic High Pass Filter 50Ω HFCN-7150D+ 7900 to 11000 MHz Maximum Ratings Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC Features • • • • • • • • 6W max. at 25oC RF Power Input* Max. DC Voltage at pins 1&3 25 VDC

MRF8P9040N

Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

AN1955

Abstract: MRF8S21200HR6 MRF8S21200HSR6 J197
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 2, 10/2010 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

J350

Abstract: J449 ATC600F101JT250XT ATC600F0R5BT250XT SG732AT MD7IC AN1977 AN1987 ATC600F101 gsc3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage

hitachi rf ldmos

Abstract: MMG15241H crcw120610k0fkea
Contextual Info: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design MMG15241H Driving MD7IC2250N W-CDMA RF Power Amplifier Lineup GaAs E-pHEMT Driving RF LDMOS Amplifier Lineup Characteristics

Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 3, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage

MD7IC2755N

Abstract: atc600s0r5bt250xt ATC600S6R8BT250XT ATC600S0R GSC356 J851
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 1, 7/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on - chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage

ATC800B1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for applications operating at 1300 MHz.

MRFE6VP8600H

Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
Contextual Info: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices