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    Honeywell Sensing and Control 2TL1-31

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    Mouser Electronics 2TL1-31 83
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    Master Electronics 2TL1-31 100
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    Honeywell Sensing and Control 2TL1-31K

    Toggle Switches DPT 3 POS .5to20A at .5to28Vdc
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    Master Electronics 2TL1-31K 60
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    Honeywell Sensing and Control 1TL1-31

    Toggle Switches Toggle SW 1POLE 3POS SCRW TERM STD LVR
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    TME 1TL1-31 10
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    Master Electronics 1TL1-31 39
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    Honeywell Sensing and Control 4TL1-31

    Toggle Switches SEALED OI TL Toggles
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    Mouser Electronics 4TL1-31
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    Newark 4TL1-31 Bulk 50
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    Master Electronics 4TL1-31 91
    • 1 $140.69
    • 10 $112.43
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    Eaton Corporation USTL131C207CH

    Power Meters & Energy Meters MtrSkt,20A,Ringless,13-Jaw,OH/UG
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    Mouser Electronics USTL131C207CH
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    TL131 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DE104iML

    Abstract: prepreg 7628 AT05 7628M PCB f antenna balun 2.4ghz cc2500 tl131 CC24xx CC2500 GRM1555C1HR50BZ01 prepreg 7628 LWQ15AN1N5B00
    Contextual Info: CC2590 www.ti.com . SWRS080 – SEPTEMBER 2008 2.4-GHz RF Front End, 14-dBm output power


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    cc2590swrs08014-dbmcc24xx+11cc2500cc2510cc2511de104imlprepreg 7628 at057628mpcb f antenna balun 2.4ghz cc2500tl131grm1555c1hr50bz01prepreg 7628lwq15an1n5b00 PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


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    ptfc260202fc10-watth-37248-4tl205+8tl2322ro4350tl233tl241587-1818-2-ndc201017 c202tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watth-34288g-4/2transistor tl131+8tl231tl127tl130tl131transistor tl1208c802tl-130lm78l05acmnd PDF

    prepreg 7628 AT05

    Abstract: prepreg 7628 CC2500
    Contextual Info: CC2590 www.ti.com . SWRS080 – SEPTEMBER 2008 2.4-GHz RF Front End, 14-dBm output power


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    cc2590swrs08014-dbmcc24xx+5cc2500cc2510cc2511prepreg 7628 at05prepreg 7628 PDF

    TL131

    Abstract: SWRS070A CC2500 CC2510 balun matching circuit C161 CC2510 CC2511 CC2591 CC2591EM QFN-16
    Contextual Info: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


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    cc2591swrs070a22-dbmcc24xx+9cc2500cc2510cc2511100-natl131cc2510 balun matching circuitc161cc2591emqfn-16 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    ptfb182503elptfb182503fl240-watth-33288-6+10h-34288-6tl249tl2472tl244transistor tl131tl251tl239ptfb182503tl250tl242 PDF

    CC2500

    Contextual Info: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


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    cc2591swrs070a22-dbmcc24xx+6cc2500cc2510cc2511100-na100-ma20-dbm PDF

    DN007

    Abstract: AN032 CC2430 CC2591EM RFID on CC2430 TL131 CC2431 CC2480 CC2591 CFR47
    Contextual Info: Application Note AN063 Using CC2591 Front End with CC2430 By Charlotte Seem and Torjus Kallerud Keywords • • • • • 1 • • • • 2.4 GHz IEEE 802.15.4 systems ZigBee systems Range Extender External PA External LNA CC2430 CC2431 CC2480 CC2591


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    an063cc2591cc2430cc2431+7cc2480dn007an032cc2591emrfid on cc2430tl131cfr47 PDF

    Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


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    ptfa091503el150-watth-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


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    ptva035002evh-36275-4a03500250stances+4lm7805ach-ndtl174tl173ptva035002ev v1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb213208fvptfb213208sv320-watth-34275g-6/2+2c109 ceramic capacitortl235 PDF

    PTFB212507SH

    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


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    ptfb082817fhh-34288-4/2transistor tl131tl239 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    ptma080304m20-leadpg-dso-20-63tl272+9tl184tl181tl271tl308tl187 transistortl274tl293tl193tl148 PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


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    ptfb182503elptfb182503fl240-watttransistor tl131+8ptfb192503tl134tl105btl231ptfb192503el v1c103 transistorro4350tl117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


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    ptfb212503elptfb212503fl240-watttransistor tl131+8tl134tl127tl234tl107tl117atc100b6r2tl227c103 transistor data PDF

    TL131

    Abstract: RF MODULE CC2500 CIRCUIT DIAGRAM GRM1555C1H1R0BZ01 CC2510 balun matching circuit transistor c111 interfacing zigbee cc2500 with microcontroller cc2500 microcontroller interfacing C101 Transistor CC2500 RF pcb antenna CC2591
    Contextual Info: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


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    cc2591swrs070a22-dbmcc24xx+13cc2500cc2510cc2511100-natl131rf module cc2500 circuit diagramgrm1555c1h1r0bz01cc2510 balun matching circuittransistor c111interfacing zigbee cc2500 with microcontrollercc2500 microcontroller interfacingc101 transistorcc2500 rf pcb antenna PDF

    CC2510 balun matching circuit

    Abstract: CC2591EM CC2500
    Contextual Info: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


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    cc2591swrs070a22-dbmcc24xx+8cc2500cc2510cc2511100-na100-ma20-dbmcc2510 balun matching circuitcc2591em PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


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    ptfb183404f340-watth-37275-6/2tl139+9ptfb183404ptfb183404eftl148transistor tl131tl162tl170tl172c105 transistortl145 PDF

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    ptfb192503elptfb192503fl240-watth-33288-6+10h-34288-4/2atc100a8r2bw150xbc103 transistortl131transistor c104c802c803r250587-1818-2-ndtl231 PDF

    PTFB192503EL V1

    Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


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    ptfb192503elptfb192503fl240-watth-33288-6+2h-34288-4/2ptfb192503el v1 PDF

    TL107 linear

    Abstract: TRANSISTOR tl131
    Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


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    ptfb182557sh250-watth-34288g-4/2tl107 linear+1transistor tl131 PDF

    PTFB212503FL

    Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


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    ptfb212503elptfb212503fl240-watth-33288-6+1h-34288-4/2 PDF

    TRANSISTOR tl131

    Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


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    ptfb211501eptfb211501f150-watth-36248-2+2h-37248-2transistor tl131 PDF