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    PTFA091503EL Search Results

    PTFA091503EL Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFA091503ELV4R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 30V H-33288-6 Original PDF 489KB
    PTFA091503ELV4R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 150W PG-33288-6 Original PDF 489KB

    PTFA091503EL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


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    ptfa091503el150-watth-33288-6 PDF

    TRANSISTOR tl131

    Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
    Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


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    ptfa091503el150-watth-33288-684mhz+10transistor tl131tl235tl231tl137tl117tl130tl134tl232c804tl127 PDF

    PCC104bct-nd

    Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original
    ptfa091503el150-watth-33288-684mhz+1pcc104bct-nd PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


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    ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


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    ptfa041501eptfa041501fptfa070601epg-dso-20-63+13pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2h-36260-2ptfa142401elptfa070601fptfa071701eptfa071701fptfa072401elptfa072401flptfa080551e PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original
    bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6bap50-03 spice modelbb 804 varicap diodemosfet toshiba 2015rf manual 19th editionrf manualblf188 PDF