TL130 Search Results

TL130 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TL1300H	Lite-On Technology	Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device	Original	PDF	46.24KB	4
TL1300L	Lite-On Technology	Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device	Original	PDF	46.09KB	4
TL1300M	Lite-On Technology	Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device	Original	PDF	47.44KB	4
TL1305800000G	Amphenol Anytek	Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 13POS TOP ENTRY 5MM PCB	Original	PDF	98.67KB
TL 130A	B&K Precision	Test Leads - Kits, Assortments, Test and Measurement, GENERAL PURPOSE DMM KIT	Original	PDF		1

TL130 Price and Stock

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STMicroelectronics STL130N8F7 MOSFET N-CH 80V 130A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STL130N8F7	Digi-Reel	10,361		1	1 $2.31 10 $1.93 100 $1.58 1000 $1.36 10000 $1.36	Buy Now
	STL130N8F7	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.11	Buy Now
Avnet Americas	STL130N8F7	Reel		26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.20	Buy Now
Mouser Electronics	STL130N8F7		7,260			1 $2.48 10 $1.88 100 $1.52 1000 $1.30 10000 $1.11	Buy Now
Newark	STL130N8F7	Cut Tape			1	1 $2.84 10 $2.47 100 $2.13 1000 $1.96 10000 $1.96	Buy Now
STMicroelectronics	STL130N8F7		7,260		1	1 $2.43 10 $1.84 100 $1.49 1000 $1.32 10000 $1.32	Buy Now

TME	STL130N8F7				1	1 $2.26 10 $1.98 100 $1.58 1000 $1.55 10000 $1.55	Get Quote
ComSIT USA	STL130N8F7		1,085			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STL130N8F7			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	STL130N8F7		210			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STL130N8F7			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
On-Shore Technology Inc EDSTL130-02 TERM BLOCK HDR 2POS 5MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EDSTL130-02	Bulk	8,321		1	1 $0.65 10 $0.65 100 $0.47 1000 $0.40 10000 $0.34	Buy Now
STMicroelectronics STL130N6F7 MOSFET N-CH 60V 130A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STL130N6F7	Cut Tape	7,530		1	1 $1.59 10 $1.28 100 $1.10 1000 $1.02 10000 $1.02	Buy Now
	STL130N6F7	Digi-Reel	7,530		1	1 $1.59 10 $1.28 100 $1.10 1000 $1.02 10000 $1.02	Buy Now
	STL130N6F7	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.83	Buy Now
Avnet Americas	STL130N6F7	Reel		26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.90	Buy Now
Mouser Electronics	STL130N6F7		21,041			1 $1.80 10 $1.30 100 $1.10 1000 $0.96 10000 $0.83	Buy Now
Newark	STL130N6F7	Cut Tape	1,398		1	1 $2.12 10 $1.78 100 $1.58 1000 $1.47 10000 $1.47	Buy Now
STMicroelectronics	STL130N6F7		21,051		1	1 $1.76 10 $1.27 100 $1.08 1000 $0.97 10000 $0.97	Buy Now

Bristol Electronics	STL130N6F7		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	STL130N6F7		6,000		1	1 - 10 - 100 $1.09 1000 $0.90 10000 $0.81	Buy Now
Avnet Silica	STL130N6F7		3,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	STL130N6F7	Cut Tape	2,999	0 Weeks, 1 Days	1	1 $0.92 10 $0.91 100 $0.86 1000 $0.77 10000 $0.67	Buy Now
Chip Stock	STL130N6F7		215,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STL130N6F7			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STL130N6F7		150,000			1 - 10 - 100 - 1000 $0.26 10000 $0.23	Buy Now
Wuhan P&S	STL130N6F7		60		1	1 $0.81 10 $0.81 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
On-Shore Technology Inc EDSTL130-04 TERM BLOCK HDR 4POS 5MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EDSTL130-04	Bulk	4,321		1	1 $0.98 10 $0.98 100 $0.71 1000 $0.60 10000 $0.51	Buy Now
On-Shore Technology Inc EDSTL130-5 TERM BLOCK HDR 5POS 5MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EDSTL130-5	Bulk	3,826		1	1 $1.14 10 $1.14 100 $0.82 1000 $0.70 10000 $0.59	Buy Now

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TL130 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
xm0830 Abstract: C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ Contextual Info: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01C GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz	Original	XM0830SK-TL1301 DS0830SK-01C 35dBm 12pin xm0830 C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ	PDF
Contextual Info: PRELIMINARY DATA SHEET XM0825SF-TL1301 Ver. 9.00 GaAs IC High Power SP3T Switch for 0.8-2.5GHz  Applications AMPS, CDMA, GPS and other RF applications.  Features • Positive Voltage Control.+2.8V typ. • Low Insertion Loss.0.35dB @ 900MHz / 0.38dB @ 1900MHz	Original	XM0825SF-TL1301 900MHz 1900MHz	PDF
XM0830SK-TL1301 Abstract: MURATA GRM155 Contextual Info: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01B GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz	Original	XM0830SK-TL1301 DS0830SK-01B 35dBm 12pin XM0830SK-TL1301 MURATA GRM155	PDF
MURATA GRM155 Abstract: murata packing information Contextual Info: PRELIMINARY DATA SHEET XM0825SF-TL1301 Ver. 9.00 GaAs IC High Power SP3T Switch for 0.8-2.5GHz  Applications AMPS, CDMA, GPS and other RF applications.  Features • Positive Voltage Control .+2.8V typ. • Low Insertion Loss .0.35dB @ 900MHz / 0.38dB @ 1900MHz	Original	XM0825SF-TL1301 900MHz 1900MHz -108dBm MURATA GRM155 murata packing information	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND	PDF
100uV Abstract: digit2000 TIP 29B Contextual Info: 2870 2860A Specifications models 2860A 2870 The “Survivor” name says it all! • Heavy Duty 1500 VDC rating ■ Ruggedized construction ■ Includes rubber boot ■ Withstands 5-foot drop ■ Extra large, high contrast LCD display ■ Gasket sealed against dirt and contaminants	Original	12/sec. TL-130A PR-28A LC-29B 100uV digit2000 TIP 29B	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PTFA091503EL PTFA091503EL 150-watt, H-33288-6	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235	PDF
PTFB212507SH Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239	PDF
C205 Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205	PDF

TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152	PDF
TL1300H Abstract: GR-1089-CORE TL0640H TL0720H TL0900H TL1100H TL3500H TL1500H Contextual Info: LITE-ON SEMICONDUCTOR TL0640H thru TL3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP DO-201AD FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400	Original	TL0640H TL3500H DO-201AD 10/1000us 8/20us 03-Dec-2001, KDWE01 TL1300H GR-1089-CORE TL0720H TL0900H TL1100H TL3500H TL1500H	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117	PDF
TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145	PDF
PTFB192503EL Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231	PDF
PTFB192503EL V1 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier	Original	PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1	PDF
TL107 linear Abstract: TRANSISTOR tl131 Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805	Original	PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131	PDF
PTFB212503FL Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-4/2	PDF
TRANSISTOR tl131 Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131	PDF

TL130 Search Results

TL130 Datasheets (5)

TL130 Price and Stock

STMicroelectronics STL130N8F7

On-Shore Technology Inc EDSTL130-02

STMicroelectronics STL130N6F7

On-Shore Technology Inc EDSTL130-04

On-Shore Technology Inc EDSTL130-5

TL130 Datasheets Context Search

xm0830

XM0830SK-TL1301

MURATA GRM155

TL205

transistor TL131

100uV

tl249

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

TL145

TL1300H

TRANSISTOR tl131

TRANSISTOR tl131

TL139

PTFB192503EL

PTFB192503EL V1

TL107 linear

PTFB212503FL

TRANSISTOR tl131