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NIC Components Corp NSTL123M500V90X241F - Boxed Product (Development Kits) (Alt: NSTL123M500V90X241F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NSTL123M500V90X241F	Box			6	1 $249.94 10 $249.94 100 $230.47 1000 $230.47 10000 $230.47	Buy Now
Lite-On Semiconductor Corporation LTL-1234A - Bag (Alt: LTL-1234A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LTL-1234A	Bag		8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
E-Switch Inc TL1237F160QG Tactile Switches 50mA 12VDC SPST PCB Layout
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TL1237F160QG					1 - 10 - 100 - 1000 - 10000 $0.62	Get Quote
Newark	TL1237F160QG	Bulk			2,200	1 - 10 - 100 - 1000 - 10000 $0.72	Buy Now
GW Instek GTL-123 Test Lead Set, Test Tip Probe; \|Gw Instek GTL-123
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GTL-123	Bulk			1	1 $26.00 10 $26.00 100 $26.00 1000 $26.00 10000 $26.00	Buy Now
TME	GTL-123				1	1 $17.41 10 $17.41 100 $17.41 1000 $17.41 10000 $17.41	Get Quote
Festo QBTL-1/2-3/8-U (564725) FITTING, T, ROTARY, PBT/NKL PL BRASS, AIR, 1/2NPT MALE, FOR 3/8" TUBING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QBTL-1/2-3/8-U (564725)	Bulk			5	1 - 10 $12.51 100 $12.51 1000 $12.51 10000 $12.51	Get Quote

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TL123 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4 tl205 +8tl2322 ro4350 tl233 tl241 587-1818-2-nd c201 017 c202 tl147	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb212507sh 200-watt h-34288g-4/2 transistor tl131 +8tl231 tl127 tl130 tl131 transistor tl120 8c802 tl-130 lm78l05acmnd	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +10h-34288-6 tl249 tl2472 tl244 transistor tl131 tl251 tl239 ptfb182503 tl250 tl242	PDF
Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	ptfa091503el 150-watt h-33288-6	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	ptva035002ev h-36275-4 a035002 50stances +4lm7805ach-nd tl174 tl173 ptva035002ev v1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +2c109 ceramic capacitor tl235	PDF
PTFB212507SH Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb212507sh 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	ptfb082817fh h-34288-4/2 transistor tl131 tl239	PDF
C205 Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	ptfb191501e ptfb191501f 150-watt h-36248-2 +2h-37248-2 c205	PDF
PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	ptfb090901ea ptfb090901fa 90-watt h-37265-2	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 tl272 +9tl184 tl181 tl271 tl308 tl187 transistor tl274 tl293 tl193 tl148	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb090901ea ptfb090901fa 90-watt h-36265-2 +9h-37265-2 ptfb090901 tl127 569w 100b4r7bw500x pcc104bctnd pcc104bct-nd transistor c104 transistor c801	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 tl145 tl245 +3transistor c111 c216 tl152	PDF
fet 4712 Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990	Original	ptfb193404f 340-watt h-37275-6/2 p03-a +9fet 4712 nfm18ps105r0j30 lm780l05acm-nd r804 4712 tl2032 mp 1046 tl1013 0805w220jt	PDF

TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt transistor tl131 +8tl134 tl127 tl234 tl107 tl117 atc100b6r2 tl227 c103 transistor data	PDF
PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb090901ea ptfb090901fa 90-watt h-37265-2	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
PTFB192503EL Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb192503el ptfb192503fl 240-watt h-33288-6 +10h-34288-4/2 atc100a8r2bw150xb c103 transistor tl131 transistor c104 c802 c803 r250 587-1818-2-nd tl231	PDF
PTFB192503EL V1 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier	Original	ptfb192503el ptfb192503fl 240-watt h-33288-6 +2h-34288-4/2 ptfb192503el v1	PDF
TL107 linear Abstract: TRANSISTOR tl131 Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805	Original	ptfb182557sh 250-watt h-34288g-4/2 tl107 linear +1transistor tl131	PDF
PTFB212503FL Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
TRANSISTOR tl131 Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	ptfb211501e ptfb211501f 150-watt h-36248-2 +2h-37248-2 transistor tl131	PDF
Contextual Info: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4	PDF

TL123 Search Results

TL123 Price and Stock

NIC Components Corp NSTL123M500V90X241F

Lite-On Semiconductor Corporation LTL-1234A

E-Switch Inc TL1237F160QG

GW Instek GTL-123

Festo QBTL-1/2-3/8-U (564725)

TL123 Datasheets Context Search

TL205

transistor TL131

tl249

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

PTFB090901EA

TL272

PTFB090901

TL145

fet 4712

TRANSISTOR tl131

PTFB090901EA

TL139

PTFB192503EL

PTFB192503EL V1

TL107 linear

PTFB212503FL

TRANSISTOR tl131