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PTFB183404 Datasheets (8)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFB183404E-V1-R0		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-8	Original	PDF	580.11KB
PTFB183404EV1R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-8	Original	PDF	592.33KB
PTFB183404E-V1-R250		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	592.32KB
PTFB183404EV1R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	596.86KB
PTFB183404F-V2-R0		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37275-6	Original	PDF	580.11KB
PTFB183404FV2R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37275-6	Original	PDF	592.33KB
PTFB183404F-V2-R250		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	580.11KB
PTFB183404FV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	596.86KB

PTFB183404 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	ptfb183404e ptfb183404f 340-watt h-36275-8 +5h-37275-6/2 tl139 tl205 ptfb183404 transistor tl131	PDF
atc200b104kw50 Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt atc200b104kw50 tl170 +8tl235 tl138 tl140 tl239 tl141 tl163 tl172 tl147	PDF
TL172 Abstract: TL170 Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications	Original	ptfb183404e ptfb183404f 340-watt h-37275-6/2 +2tl172 tl170	PDF
PTFB090901EA Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	ptva093002tc 960mhz 758mhz pxac201602fc +62025mhz h-49248h-4 h-37248-4 400mhz 2700mhz ptfb090901ea	PDF
PTFA142401EL Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e pg-dso-20-63 +13pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 h-36260-2 ptfa142401el ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl ptfa080551e	PDF
PTFA041501E Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e 725-7452fl +13pg-dso-20-63 pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 ptfa220121m ptfb241402f ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	bgu7073 bgu7072 infineon power management selection guide 2011 toshiba car audio catalog 2015 +6bap50-03 spice model bb 804 varicap diode mosfet toshiba 2015 rf manual 19th edition rf manual blf188	PDF