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    PTFB241402F Search Results

    PTFB241402F Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFB241402F-V1-R0
    Wolfspeed IC AMP RF LDMOS H-37248-4-1 Original PDF 523.87KB
    PTFB241402F-V1-R0
    Wolfspeed IC AMP RF LDMOS H-37248-4-1 Original PDF 579.78KB
    PTFB241402FV1R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4-1 Original PDF 456.51KB
    PTFB241402F-V1-R250
    Wolfspeed IC AMP RF LDMOS Original PDF 523.87KB
    PTFB241402F-V1-R250
    Wolfspeed IC AMP RF LDMOS Original PDF 579.78KB
    PTFB241402FV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 460.76KB

    PTFB241402F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


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    ptfb241402fh-37248-4tl817tl934+8tl804tl802tl902tl941tl928tl945tl84tl805 PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original
    ptfb241402fh-37248-4c909tl920+2tl823tl817 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original
    ptfb241402fh-37248-4tl817tl801+8tl804tl802c901 transistortransistor c904tl944tl902transistor c905tl945 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


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    ptfa041501eptfa041501fptfa070601epg-dso-20-63+13pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2h-36260-2ptfa142401elptfa070601fptfa071701eptfa071701fptfa072401elptfa072401flptfa080551e PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original
    ptfa041501eptfa041501fptfa070601e725-7452fl+13pg-dso-20-63pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2ptfa220121mptfb241402fptfa070601fptfa071701eptfa071701fptfa072401elptfa072401fl PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original
    bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6bap50-03 spice modelbb 804 varicap diodemosfet toshiba 2015rf manual 19th editionrf manualblf188 PDF