VTL9A10
Abstract: VTL9A9 Vactec cds cell vactrol vectrol 50C24 Single photocell Vactec VTL9B8 VTL9A1
Contextual Info: Powered n CO p> by o B» Bulletin VTL 9 DIMENSION D RAW IN GS V T L9 Series Bottom V iew Maximum case dissipation 5 400 mW — derate 10 mW/ *C above 35*C — case Maximum cell power 200 mW — derate 4 mW/'C above 25*C — case, Isolation voltage 500V Thermal resistance—
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vtl9a10vtl9a9vactec cds cellvactrol+6vectrol50c24single photocellvactecvtl9b8vtl9a1
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TL817
Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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ptfb241402fh-37248-4tl817tl934+8tl804tl802tl902tl941tl928tl945tl84tl805
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anzac AM 108
Abstract: GPD-404 QBH-104 wj a75 anzac AM-108 103 ma wj 62 switch cross reference UT-0205 UT0507 anzac am-124
Contextual Info: ROSS REFERENCE UST Awantak M O O EL# W lv r u n iA MODH# M Q 6ÉL# msÊmë M O D iL # M O D iL # V3C330 ^GC553 3PD110 3PD120 GPD130 GPD201 GPD202 GPD251 GPD310 GPD320 GPD330 GPD401 GPD402 GPD403 GPD404 GPD405 GPD461 GPD462 GPD463 GPD464 GPM1052 PPA253 PPD2001
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v3c330gc5533pd1103pd120+16gpd130gpd201gpd202gpd251gpd310gpd320anzac am 108gpd-404qbh-104wj a75anzac am-108103 ma wj 62switch cross referenceut-0205ut0507anzac am-124
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TM9148
Abstract: TL9002 AC588 TL908 tl9012 TM7294
Contextual Info: WJ-STELLEX-M/A-COM Amplifier Direct Replacement List WJ-STELLEX M/A-COM AMPLIFONIX MODEL# MODEL# A-l A-3 A-5 A-5-5 A -l A-9 A-ll A-l 1-2 A-12 A-13 A-l 6-2 A-17 A-l 8 A-18-1 A-19 A-19-1 A-23 A-24 A-25 A-25-1 A-26 TM6501 TM6503 TM6505 TM6605 TM6607 TM6609 TM9111
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tm6501tm6503tm6505tm6605+12tm6607tm6609tm9111tm9311tm9112tm9113tm9148tl9002ac588tl908tl9012tm7294
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C909
Abstract: tL920 TL823 TL817 PTFB241402F
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in
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ptfb241402fh-37248-4c909tl920+2tl823tl817
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TL817
Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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ptfb241402fh-37248-4tl817tl801+8tl804tl802c901 transistortransistor c904tl944tl902transistor c905tl945
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