TL817
Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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PTFB241402F
PTFB241402F
H-37248-4
TL817
TL934
TL804
TL802
TL902
TL941
TL928
tl945
TL84
TL805
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C909
Abstract: tL920 TL823 TL817 PTFB241402F
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in
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Original
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PTFB241402F
PTFB241402F
H-37248-4
C909
tL920
TL823
TL817
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TL817
Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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Original
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PTFB241402F
PTFB241402F
H-37248-4
TL817
TL801
TL804
TL802
c901 transistor
transistor c904
TL944
TL902
transistor c905
tl945
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PDF
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