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    TL823 Search Results

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    TL823 Price and Stock

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    Honeywell Sensing and Control 2TL82-3

    SWITCH TOGGLE DPDT 15A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2TL82-3 Bulk 50
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    • 100 $91.19
    • 1000 $91.19
    • 10000 $91.19
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    Mouser Electronics 2TL82-3
    • 1 -
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    • 100 $109.87
    • 1000 $109.87
    • 10000 $109.87
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    Newark 2TL82-3 Bulk 3 2
    • 1 $137.98
    • 10 $137.98
    • 100 $137.98
    • 1000 $137.98
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    TME 2TL82-3 3 1
    • 1 $149.60
    • 10 $149.60
    • 100 $149.60
    • 1000 $149.60
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    FDH Electronics 2TL82-3
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    Master Electronics 2TL82-3
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    • 10 $257.25
    • 100 $94.95
    • 1000 $94.95
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    Honeywell Sensing and Control 1TL82-3

    TOGGLES & ROCKERS
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    RS 1TL82-3 Bulk 20
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    • 100 $59.02
    • 1000 $56.06
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    Realtek Semiconductor RTL8231-GR

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    Chip Stock RTL8231-GR 9,000
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    Win Source Electronics RTL8231-GR 7,500
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    • 100 $0.62
    • 1000 $0.48
    • 10000 $0.48
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    Honeywell Sensing and Control / MICRO SWITCH 2TL82-3

    Toggle Switches SEALED OI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager 2TL82-3 1
    • 1 $117.34
    • 10 $107.82
    • 100 $102.29
    • 1000 $102.29
    • 10000 $102.29
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    Honeywell Sensing and Control / MICRO SWITCH 1TL82-3

    Toggle Switches SEALED OI
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    TL823 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL82166

    Abstract: GMW3100 TL965 TL82366 4856F AEC-Q100 ATA6823 JESD78 QFN32 T100
    Contextual Info: Features • PWM and Direction-controlled Driving of Four Externally-powered NMOS Transistors • A Programmable Dead Time Is Included to Avoid Peak Currents Within the H-bridge • Integrated Charge Pump to Provide Gate Voltages for High-side Drivers and to Supply


    Original     		4856F TL82166 GMW3100 TL965 TL82366 AEC-Q100 ATA6823 JESD78 QFN32 T100 PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    TL82166

    Abstract: TL965 GMW3100 AEC-Q100 ATA6823 JESD78 QFN32 T100 TL821 TL82366
    Contextual Info: Features • PWM and Direction-controlled Driving of Four Externally-powered NMOS Transistors • A Programmable Dead Time Is Included to Avoid Peak Currents Within the H-bridge • Integrated Charge Pump to Provide Gate Voltages for High-side Drivers and to Supply


    Original     		4856E TL82166 TL965 GMW3100 AEC-Q100 ATA6823 JESD78 QFN32 T100 TL821 TL82366 PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF