TL817
Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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ptfb241402fh-37248-4tl817tl934+8tl804tl802tl902tl941tl928tl945tl84tl805
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TL872
Abstract: TB825 TL 873 TL-872 TL-861 TL812 TB845 tl837 TL-825 tl840
Contextual Info: BROADBAND SERIES TI^8/TB-8-A SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz i GENERAL SPECIFICATIONS: Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Environment: Connectors: 0.02 to 18.0 GHz. 50 OHMS.
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tl872tb825tl 873tl-872+6tl-861tl812tb845tl837tl-825tl840
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FZK101
Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974
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grou19cn127-128-638zn220-320cn131-132-642+16zn221-321cn133-134-644zn248-348cn135-136-646zn222-322cn121-122-682fzk101fzk105upd101snf10sn76131taa700fzh111fzj101mfc8010mfc8001
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DL074D
Abstract: SN8400N D100D E412D sn8404n D204D E355D D410D DS8205D D147D
Contextual Info: RFT D100D E100D D103D E103D D104D E104D D108D E108D D110D E110D D120D E120D D121D E121D D122D D123D D126D E126D D130D E130D D140D E140D D146D E146D D147D E147D D150D E150D D151D E151D D153D E153D D154D E154D D160D E160D D172D E172D D174D E174D D175D E175D
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d100de100dd103de103d+15d104de104dd108de108dd110de110ddl074dsn8400ne412dsn8404nd204de355dd410dds8205dd147d
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C909
Abstract: tL920 TL823 TL817 PTFB241402F
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in
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ptfb241402fh-37248-4c909tl920+2tl823tl817
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TL817
Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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ptfb241402fh-37248-4tl817tl801+8tl804tl802c901 transistortransistor c904tl944tl902transistor c905tl945
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