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PTFA211801E Datasheets (12)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA211801E		Infineon Technologies	2100 MHz to 2200 MHz; Package: PG:H-36260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P_1dB (typ): 180.0 W; Supply Voltage: 28.0 V;	Original	PDF	261.75KB	11
PTFA211801E V4		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H-36260-2	Original	PDF	259.5KB
PTFA211801EV4		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 180W H-36260-2	Original	PDF		11
PTFA211801E V4 R250		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H-36260-2	Original	PDF	259.5KB
PTFA211801EV4R250		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 180W H-36260-2	Original	PDF		11
PTFA211801EV5		Infineon Technologies	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 180W H36260-2	Original	PDF		9
PTFA211801E-V5-R0		Wolfspeed	RF MOSFET LDMOS 28V H-36260-2	Original	PDF	377.62KB	3
PTFA211801E-V5-R250		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H36260-2	Original	PDF	422.3KB
PTFA211801EV5R250		Infineon Technologies	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 180W H36260-2	Original	PDF		9
PTFA211801EV5R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H36260-2	Original	PDF	422.3KB
PTFA211801EV5T350XWSA1		Infineon Technologies	IC RF FET LDMOS H-36260-2	Original	PDF	377.62KB	3
PTFA211801EV5XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 2.14GHZ H36260-2	Original	PDF	422.3KB

PTFA211801E Price and Stock

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Infineon Technologies AG


Infineon Technologies AG PTFA211801E Trans RF MOSFET N-CH 65V 3-Pin Case 30260
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	PTFA211801E		10		1	1 $18.00 10 $16.56 100 $16.56 1000 $16.56 10000 $16.56	Buy Now
Quest Components	PTFA211801E		8			1 $19.50 10 $19.50 100 $19.50 1000 $19.50 10000 $19.50	Buy Now

PTFA211801E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A211801E Abstract: 200B103 LM7805 PTFA211801E Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	ptfa211801e ptfa211801f 180-watt 2140dangerous +3a211801e 200b103 lm7805	PDF
LM7805 Abstract: A211801E BCP56 PTFA211801E R250 H-36260-2 infineon 6260 Contextual Info: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from	Original	ptfa211801e 180-watt h-36260-2 lm7805 +4a211801e bcp56 r250 infineon 6260	PDF
Contextual Info: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from	Original	ptfa211801e 180-watt h-36260-2	PDF
PTFA211801E Abstract: a211 BCP56 LM7805 PTFA211801F Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	ptfa211801e ptfa211801f 180-watt a211 +2bcp56 lm7805	PDF
A211801E Abstract: PTFA211801E Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	ptfa211801e ptfa211801f 180-watt 2140dangerous +1a211801e	PDF
PTFA211801E Abstract: PTFA211801F Contextual Info: Product Brief PTFA211801E PTFA211801F WCDMA RF Power FET The PTFA211801E and PTFA211801F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211801E and	Original	ptfa211801e ptfa211801f b134-h8501-x-0-7600	PDF
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	pg-dso-20 pg-rfp-10 h-34265-8 h-33265-8 +15h-30248-2 h-36248-2 h-33288-2 h-31248-2 h-37248-2 h-34288-2 a1807 ptfa211801e h-32259-2 lt 860 ptfa071701gl ptfa072401fl 1800 ldmos 1805-1880 ptma210452m	PDF
PTFB090901EA Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	ptva093002tc 960mhz 758mhz pxac201602fc +62025mhz h-49248h-4 h-37248-4 400mhz 2700mhz ptfb090901ea	PDF
PTFA142401EL Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e pg-dso-20-63 +13pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 h-36260-2 ptfa142401el ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl ptfa080551e	PDF
PTFA041501E Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e 725-7452fl +13pg-dso-20-63 pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 ptfa220121m ptfb241402f ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	bgu7073 bgu7072 infineon power management selection guide 2011 toshiba car audio catalog 2015 +6bap50-03 spice model bb 804 varicap diode mosfet toshiba 2015 rf manual 19th edition rf manual blf188	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF