Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFA211801F Search Results

    PTFA211801F Datasheets (5)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFA211801F
    		Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-37260-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 180.0 W; Supply Voltage: 28.0 V; Original PDF 261.75KB 11
    PTFA211801F V4
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 180W H-37260-2 Original PDF 259.5KB
    PTFA211801FV4
    		Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 180W H-37260-2 Original PDF 11
    PTFA211801F V4 R250
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 180W H-37260-2 Original PDF 259.5KB
    PTFA211801FV4R250
    		Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 180W H-37260-2 Original PDF 11

    PTFA211801F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A211801E

    Abstract: 200B103 LM7805 PTFA211801E
    Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E 200B103 LM7805 PDF

    PTFA211801E

    Abstract: a211 BCP56 LM7805 PTFA211801F
    Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PTFA211801E PTFA211801F PTFA211801E PTFA211801F 180-watt, a211 BCP56 LM7805 PDF

    A211801E

    Abstract: PTFA211801E
    Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E PDF

    PTFA211801E

    Abstract: PTFA211801F
    Contextual Info: Product Brief PTFA211801E PTFA211801F WCDMA RF Power FET The PTFA211801E and PTFA211801F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211801E and


    Original     		PTFA211801E PTFA211801F PTFA211801E PTFA211801F B134-H8501-X-0-7600 PDF

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 PDF