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PTFB Datasheets (141)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFB	Thermometrics	PLATINUM SENSOR FOR TEMPERATURE MEASUREMENT	Original	PDF	63.7KB	2
PTFB072707FH-V1-R0	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288G-4	Original	PDF	536.15KB
PTFB072707FHV1R0XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288G-4	Original	PDF	434.61KB
PTFB072707FH-V1-R250	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	536.15KB
PTFB072707FHV1R250XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	439.02KB
PTFB082817FHV1R250XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288	Original	PDF	444.68KB
PTFB082817FHV1S250XTMA1	Infineon Technologies	IC FET RF LDMOS H-34288	Original	PDF	377.62KB	3
PTFB082817FHV1XWSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288	Original	PDF	444.68KB
PTFB090901EA-V2-R0	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36265-2	Original	PDF	543.54KB
PTFB090901EAV2R0XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36265-2	Original	PDF	515.86KB
PTFB090901EA-V2-R250	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	543.54KB
PTFB090901EAV2R250XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	511.05KB
PTFB090901FA-V2-R0	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2	Original	PDF	543.54KB
PTFB090901FAV2R0XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2	Original	PDF	515.86KB

PTFB090901FA-V2-R250	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	543.54KB
PTFB090901FAV2R250XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	511.05KB
PTFB091507FH-V1-R0	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288-4	Original	PDF	489.89KB
PTFB091507FHV1R0XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288-4	Original	PDF	494.86KB
PTFB091507FH-V1-R250	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	489.89KB
PTFB091507FHV1R250XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	499.22KB

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PTFB Price and Stock

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Eaton Corporation PTFB-2500-JCD Open Fuse Block 1 Pole 2500V 5A - Bulk (Alt: PTFB-2500-JCD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTFB-2500-JCD	Bulk		67 Weeks	24	1 - 10 - 100 $125.41 1000 $124.12 10000 $124.12	Buy Now
Mouser Electronics	PTFB-2500-JCD					1 $198.09 10 $198.09 100 $198.09 1000 $198.09 10000 $198.09	Get Quote
Super Micro Computer Inc CSE-PTFB-812 - Bulk (Alt: CSE-PTFB-812)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CSE-PTFB-812	Bulk		24 Weeks	1	1 $16.94 10 $14.96 100 $14.69 1000 $14.69 10000 $14.69	Buy Now
Infineon Technologies AG PTFB213208SVV2R250XTMA1 - Tape and Reel (Alt: PTFB213208SVV2R250XTMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTFB213208SVV2R250XTMA1	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Super Micro Computer Inc CSE-PTFB-812B - Bulk (Alt: CSE-PTFB-812B)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CSE-PTFB-812B	Bulk		24 Weeks	1	1 $16.94 10 $14.96 100 $14.69 1000 $14.69 10000 $14.69	Buy Now
Super Micro Computer Inc CSE-PTFB-813 - Bulk (Alt: CSE-PTFB-813)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CSE-PTFB-813	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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PTFB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb212507sh 200-watt h-34288g-4/2 transistor tl131 +8tl231 tl127 tl130 tl131 transistor tl120 8c802 tl-130 lm78l05acmnd	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +10h-34288-6 tl249 tl2472 tl244 transistor tl131 tl251 tl239 ptfb182503 tl250 tl242	PDF
LM780L05ACM-ND Abstract: PTFB193408SVV1R250XTMA1 Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input	Original	ptfb193408sv 340-watt h-34275g-6/2 lm780l05acm-nd +1ptfb193408svv1r250xtma1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +2c109 ceramic capacitor tl235	PDF
PTFB212507SH Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb212507sh 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	ptfb082817fh h-34288-4/2 transistor tl131 tl239	PDF
C205 Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	ptfb191501e ptfb191501f 150-watt h-36248-2 +2h-37248-2 c205	PDF
PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	ptfb090901ea ptfb090901fa 90-watt h-37265-2	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb090901ea ptfb090901fa 90-watt h-36265-2 +9h-37265-2 ptfb090901 tl127 569w 100b4r7bw500x pcc104bctnd pcc104bct-nd transistor c104 transistor c801	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 tl145 tl245 +3transistor c111 c216 tl152	PDF
fet 4712 Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990	Original	ptfb193404f 340-watt h-37275-6/2 p03-a +9fet 4712 nfm18ps105r0j30 lm780l05acm-nd r804 4712 tl2032 mp 1046 tl1013 0805w220jt	PDF
Contextual Info: FLASH MEMORY CARD MB98C81013 1MBV81123(2MBV81233<4MBV81333(8MB -10 1M/2M/4M/8M-BYTE 5 V-ONLY FLASH MINIATURE CARD The Fujitsu Flash Miniature cards conform to “Miniature Card Specification”,ptfbfcflishecf: by MCIF; Miniature Card Implementers Forum. .	OCR Scan	mb98c81013 1mbv81123 4mbv81333 f9703	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	ptfb182503el ptfb182503fl 240-watt transistor tl131 +8ptfb192503 tl134 tl105b tl231 ptfb192503el v1 c103 transistor ro4350 tl117	PDF
TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt transistor tl131 +8tl134 tl127 tl234 tl107 tl117 atc100b6r2 tl227 c103 transistor data	PDF

PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb090901ea ptfb090901fa 90-watt h-37265-2	PDF
TL817 Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in	Original	ptfb241402f h-37248-4 tl817 tl934 +8tl804 tl802 tl902 tl941 tl928 tl945 tl84 tl805	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
PTFB192503EL Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb192503el ptfb192503fl 240-watt h-33288-6 +10h-34288-4/2 atc100a8r2bw150xb c103 transistor tl131 transistor c104 c802 c803 r250 587-1818-2-nd tl231	PDF
PTFB192503EL V1 Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier	Original	ptfb192503el ptfb192503fl 240-watt h-33288-6 +2h-34288-4/2 ptfb192503el v1	PDF
TL107 linear Abstract: TRANSISTOR tl131 Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805	Original	ptfb182557sh 250-watt h-34288g-4/2 tl107 linear +1transistor tl131	PDF
PTFB212503FL Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
TRANSISTOR tl131 Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	ptfb211501e ptfb211501f 150-watt h-36248-2 +2h-37248-2 transistor tl131	PDF
Contextual Info: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
PTFB211501E Abstract: PTFB211501F R250 H-36248-2 Contextual Info: Preliminary PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETS designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include	Original	ptfb211501e ptfb211501f 150-watt h-37248-2 +2r250 h-36248-2	PDF

PTFB Search Results

PTFB Datasheets (141)

PTFB Price and Stock

Eaton Corporation PTFB-2500-JCD

Super Micro Computer Inc CSE-PTFB-812

Infineon Technologies AG PTFB213208SVV2R250XTMA1

Super Micro Computer Inc CSE-PTFB-812B

Super Micro Computer Inc CSE-PTFB-813

PTFB Datasheets Context Search

transistor TL131

tl249

LM780L05ACM-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

PTFB090901EA

PTFB090901

TL145

fet 4712

TRANSISTOR tl131

TRANSISTOR tl131

PTFB090901EA

TL817

TL139

PTFB192503EL

PTFB192503EL V1

TL107 linear

PTFB212503FL

TRANSISTOR tl131

PTFB211501E