Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFB Search Results

    PTFB Datasheets (141)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFB
    Thermometrics PLATINUM SENSOR FOR TEMPERATURE MEASUREMENT Original PDF 63.7KB 2
    PTFB072707FH-V1-R0
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288G-4 Original PDF 536.15KB
    PTFB072707FHV1R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288G-4 Original PDF 434.61KB
    PTFB072707FH-V1-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 536.15KB
    PTFB072707FHV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 439.02KB
    PTFB082817FHV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288 Original PDF 444.68KB
    PTFB082817FHV1S250XTMA1
    Infineon Technologies IC FET RF LDMOS H-34288 Original PDF 377.62KB 3
    PTFB082817FHV1XWSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288 Original PDF 444.68KB
    PTFB090901EA-V2-R0
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36265-2 Original PDF 543.54KB
    PTFB090901EAV2R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36265-2 Original PDF 515.86KB
    PTFB090901EA-V2-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 543.54KB
    PTFB090901EAV2R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 511.05KB
    PTFB090901FA-V2-R0
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2 Original PDF 543.54KB
    PTFB090901FAV2R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2 Original PDF 515.86KB
    PTFB090901FA-V2-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 543.54KB
    PTFB090901FAV2R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 511.05KB
    PTFB091507FH-V1-R0
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288-4 Original PDF 489.89KB
    PTFB091507FHV1R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-34288-4 Original PDF 494.86KB
    PTFB091507FH-V1-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 489.89KB
    PTFB091507FHV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 499.22KB
    ...
    SF Impression Pixel

    PTFB Price and Stock

    McGill Microwave Systems Ltd

    McGill Microwave Systems Ltd RG223-TMRP-TFBH(QTY:1M)

    COAX CBL RP-TNC TO TNC 3.3'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG223-TMRP-TFBH(QTY:1M) 1
    • 1 $41.65
    • 10 $39.75
    • 100 $37.86
    • 1000 $37.86
    • 10000 $37.86
    Buy Now

    McGill Microwave Systems Ltd RG303-TMRP-TFBH(QTY:15M)

    COAX CBL RP-TNC TO TNC 49.2'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG303-TMRP-TFBH(QTY:15M) 1
    • 1 $112.51
    • 10 $103.27
    • 100 $94.42
    • 1000 $94.42
    • 10000 $94.42
    Buy Now

    McGill Microwave Systems Ltd RG303-TMRP-TFBH(QTY:60M)

    COAX CBL RP-TNC TO TNC 196.9'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG303-TMRP-TFBH(QTY:60M) 1
    • 1 $544.47
    • 10 $499.73
    • 100 $456.90
    • 1000 $456.90
    • 10000 $456.90
    Buy Now

    McGill Microwave Systems Ltd RG400-SFRP-TFBH(QTY:15M)

    COAX CBL RP-SMA TO TNC 49.2'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-SFRP-TFBH(QTY:15M) 1
    • 1 $212.30
    • 10 $194.85
    • 100 $178.15
    • 1000 $178.15
    • 10000 $178.15
    Buy Now

    McGill Microwave Systems Ltd RG400-SFRP-TFBH(QTY:60M)

    COAX CBL RP-SMA TO TNC 196.9'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-SFRP-TFBH(QTY:60M) 1
    • 1 $711.44
    • 10 $652.98
    • 100 $597.01
    • 1000 $597.01
    • 10000 $597.01
    Buy Now

    PTFB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original
    PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    LM780L05ACM-ND

    Abstract: PTFB193408SVV1R250XTMA1
    Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input


    Original
    PTFB193408SV PTFB193408SV 340-watt H-34275G-6/2 LM780L05ACM-ND PTFB193408SVV1R250XTMA1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original
    PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    PTFB212507SH

    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original
    PTFB212507SH PTFB212507SH 200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original
    PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    C205

    Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original
    PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205 PDF

    PTFB090901EA

    Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original
    PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2 PDF

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original
    PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    fet 4712

    Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
    Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990


    Original
    PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT PDF

    Contextual Info: FLASH MEMORY CARD MB98C81013 1MBV81123(2MBV81233<4MBV81333(8MB -10 1M/2M/4M/8M-BYTE 5 V-ONLY FLASH MINIATURE CARD The Fujitsu Flash Miniature cards conform to “Miniature Card Specification”,ptfbfcflishecf: by MCIF; Miniature Card Implementers Forum. .


    OCR Scan
    MB98C81013 1MBV81123 4MBV81333 F9703 PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original
    PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original
    PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA PDF

    PTFB090901EA

    Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2 PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original
    PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original
    PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 PDF

    PTFB192503EL V1

    Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original
    PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1 PDF

    TL107 linear

    Abstract: TRANSISTOR tl131
    Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original
    PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131 PDF

    PTFB212503FL

    Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original
    PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-4/2 PDF

    TRANSISTOR tl131

    Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original
    PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131 PDF

    Contextual Info: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original
    PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2 PDF

    PTFB211501E

    Abstract: PTFB211501F R250 H-36248-2
    Contextual Info: Preliminary PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETS designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include


    Original
    PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, PTFB211501F* H-37248-2 R250 H-36248-2 PDF