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P03A
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Apex Microtechnology
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POWER OPERATIONAL AMPLIFIER |
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JMTP080P03A
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Jiangsu JieJie Microelectronics Co Ltd
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JMTP080P03A is a -30V, -15A P-channel enhancement mode power MOSFET in SOP-8 package, featuring RDS(ON) less than 9mΩ at VGS = -10V, advanced trench technology, low gate charge, and 100% UIS tested. |
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JMTK340P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTK340P03A in TO-252-3L package with -30V drain-source voltage, -20A continuous drain current, and low on-resistance of 26.8mΩ at VGS = -10V. |
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JMTK050P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -100A continuous drain current, and RDS(on) less than 5.3mΩ at VGS = -10V, available in TO-252-4R package. |
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JMTG060P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -75A continuous drain current, and RDS(on) less than 5.4mΩ at VGS=-10V, available in PDFN5x6-8L package. |
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JMTQ100P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -40A continuous drain current, and RDS(on) less than 9.4mΩ at VGS=-10V, available in PDFN3x3-8L package. |
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JMTV200P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTV200P03A in DFN2020-6L package, -30V drain-source voltage, -11A continuous drain current, RDS(ON) less than 17.7mΩ at VGS -10V, lead-free and 100% UIS tested. |
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JMTQ160P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -15A continuous drain current, and RDS(ON) less than 14mΩ at VGS=-10V, available in PDFN3x3-8L package. |
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JMTP250P03A
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Jiangsu JieJie Microelectronics Co Ltd
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JMTP250P03A is a -30V, -9A P-channel enhancement mode power MOSFET in SOP-8 package with RDS(on) less than 25mΩ at VGS=-10V, featuring advanced trench technology for efficient power management and load switching applications. |
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JMTK080P03A
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Jiangsu JieJie Microelectronics Co Ltd
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JMTK080P03A P-channel enhancement mode power MOSFET with -30V drain-source voltage, -60A continuous drain current, 6.5mΩ RDS(ON) at VGS = -10V, and TO-252-3L package. |
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JMTQ080P03A
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Jiangsu JieJie Microelectronics Co Ltd
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-30V, -45A P-channel Enhancement Mode Power MOSFET in PDFN3x3-8L package with RDS(ON) < 7.4mΩ at VGS = -10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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SKQ35P03AD
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Shikues Semiconductor
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30V P-Channel MOSFET, VDSS -30V, ID -35A, RDS(ON) 20mΩ, TJ -55 to 150°C. |
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JMTG050P03A
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Jiangsu JieJie Microelectronics Co Ltd
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-30V, -80A, 5.2mΩ P-channel Power Trench MOSFET in PDFN5x6-8L package with low on-resistance, excellent RDS(ON), and low gate charge, suitable for load switch, PWM, and power management applications. |
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JMTG080P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTG080P03A with -30V drain-source voltage, -50A continuous drain current, 7mΩ RDS(ON) at VGS = -10V, in PDFN5x6-8L package. |
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JMTK50P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTK50P03A with -30V drain-source voltage, -50A continuous drain current, and low on-resistance of 9.2mΩ at VGS = -10V, housed in a TO-252-3L package. |
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JMTI080P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTI080P03A with -30V drain-source voltage, -60A continuous drain current, and RDS(on) less than 7.5mΩ at VGS = -10V, available in TO-251-4R package. |
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JMTK060P03A
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Jiangsu JieJie Microelectronics Co Ltd
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-30V, -90A, 4.2mΩ P-channel Power Trench MOSFET in TO-252-3L package with low on-resistance and gate charge, suitable for load switch and power management applications. |
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SKQ50P03AD
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Shikues Semiconductor
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30V P-Channel MOSFET, -50A, -200A, -55 to 150°C, RDS(ON) 7.1mΩ, PDFN5060. |
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JMTK160P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTK160P03A with -30V drain-source voltage, -45A continuous drain current, and RDS(on) less than 14mΩ at VGS=-10V, available in TO-252-3L package. |
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JMTK100P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -55A continuous drain current, RDS(on) less than 10mΩ at VGS = -10V, and low gate charge, suitable for power management and load switch applications. |
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JMTP080P03A
