C216 Search Results

C2162PX2

Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
Contextual Info: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply

c2166

Abstract: RGEF250
Contextual Info: PRODUCT: RGEF250 PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com DOCUMENT: SCD 25191 PCN: C21663 REV LETTER: C REV DATE: JULY 16, 2007 PAGE NO.: 1 OF 1 Overcurrent Protection Device Raychem Circuit Protection Products

scintillator

Abstract: "x-ray scanner" 16 Photodiode-Array common cathode photodiode 9 ELEMENT photoDIODE ARRAY c216 PDB-C216-S
Contextual Info: PHOTONIC X-RAY, Silicon Photodiode Array, Photoconductive with scintillation screen Type PDB-C216-S DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] C L CL ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 .373 [9.47] .062 [1.57] COMMON CATHODE

Contextual Info: 3 L □ 20 ns Worst-Case M ultiply Time □ Low Power CMOS Technology □ Replaces TRW M PY016/TM C216, Cypress CY7C516, IDT 7216L, and AM D Am29516 □ Tw o's Complement, Unsigned, or Mixed Operands □ Three-State Outputs □ DESC SM D No. 5962-86873 □ Available 100% Screened to

C1100H

Abstract: 2N929 2N1613 bc107 transistor c240 Transistor BC107 2N918 BC107 BCY70 C1100L
Contextual Info: Unencapsulated Chip Transistors PNP and IMPN 'C h ip ' Transistors fo r M icro c ircu it Assemblies T ype C h aracte ristics @ 2 5 ° C M a x im u m R atings Discrete fa m ily B V CSO V bv ceo V C1100L C1100H C1200L C1200H C2160 C2180L C2180H C2300L C 2300H

C2162PX2

Abstract: SMPS SOT23-6 C2161PX2 Primary Sensing SMPS Controller PWM controller sot23-6 offline smps Cambridge Semiconductor DS-2918-0906 C2161 "SMPS Controller"
Contextual Info: C2161PX2 and C2162PX2 Datasheet Primary Sensing SMPS Controller For Offline Applications ADVANTAGES •       Low cost bipolar primary switch Tight tolerance CV/CC operation Low component count High efficiency Energy Star 2.0 compliance with margin

Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: RGEF250 DOCUMENT: SCD 25191 PCN: C21663 REV LETTER: B REV DATE: JUNE 29, 2005 PAGE NO.: 1 OF 1

Contextual Info: Blue Enhanced Linear Array Silicon Photodiode PDB-C216 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .997 [25.32] .987 [25.07] .800 [20.32] .062 [1.57] 16X ANODE 4 6 8 10 I 13 15 17 .0625 [1.588] 12 14 16 18X .025 [0.64] SQUARE .300 [7.62] 18 .143 [3.63]

c216

Abstract: tr c216 PDB-C216
Contextual Info: PDB-C216 Blue Enhanced Linear Array Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .997 [25.32] .987 [25.07] .800 [20.32] .062 [1.57] 16X ANODE 4 6 8 10 I 13 15 17 .0625 [1.588] 12 14 16 18X .025 [0.64] SQUARE .300 [7.62] 18 .143 [3.63]

trw 016h

Abstract: 16D 213 B H 16D 213 A O 16D 213 B A R2IR22
Contextual Info: L M U 1 6/2 1 6 16 x 1 6-b it Pa rallel M u l t i p l i e r DESCRIPTION FEATURES □ 20 n s W orst-C ase M ultip ly T im e □ L ow P ow er CM OS T echnology □ R eplaces TRW M PY 016/TM C216, C y p re ss CY7C516, IDT 7216L, a n d A M D Am29516 □ T w o 's C om p lem en t, U nsigned, or

C216

Abstract: C175
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. IF L -L X 3 8 7 A REV. E.C.N. NUMBER AND REVISION COMMENTS A E.C.N. #11146. DATE 0 4 .1 0 .0 7 _ ELECTRO-OPTICAL SPEC in CATIONS_ 6,35 <,250 MAX, DESIGN VOLTAGE VAC OR VDC: 5,50 C216) 2 S .0 CURRENT DRAW DESIGN VOLTS: 40 mA

optocoupler 8178

Abstract: RCC Ringing Choke Converter Ringing Choke Converter switching controller sot23-6 sot23 Flyback Converter c2160 camsemi C2152PX2 C2150 C2472PX2 C2470
Contextual Info: Choosing the correct CamSemi controller for your application C2470 family overview C2150 & C2160 family overview The C2470 series of controllers offers a novel approach for offline power conversion. They replace linear-type power supplies with a low cost switchmode solution, using a topology called the Resonant

MOD-LTR501ALS

Contextual Info: 3.3V This hardware design by Olimex LTD is licensed under a Creative Commons Attribution-ShareAlike 3.0 Unported License. 3.3V 3V3 IR LTE-C216R-14 L1 CL470nH/0805/1.76R/250mA R1 10k R2 NA R3 NA R4 33R U1 1 3 4 2 VDD NC NC GND SDA SCL #INT LDR 8 7 6 5 SDA SCL

BTNA06N3

Abstract: MARKING 1G TRANSISTOR
Contextual Info: Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application.

220 ac to 24 dc SMPS charger circuit diagram

Abstract: SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS 5V SMPS charger circuit diagram 220 ac voltage regulator SMPS without transformer C2162DX2 MJE130 PTXX SMPS SOT23-6 sot23-6 marking code C2161DX2
Contextual Info: C2161DX2 and C2162DX2 Datasheet Primary Sensing SMPS Controller For 5* USB Charging Applications ADVANTAGES • • • • • • • • Suitable for applications with or without cable such as USB chargers Can meet USB OMTP undershoot requirement < 30 mW no-load power consumption 5* rating

Contextual Info: Silicon Photodiode Array, Photoconductive 16 element Type PDB-C216 PACKAGE DIMENSIONS INCH [mm] CL C L ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 .305 [7.75] .062 [1.57] COMMON CATHODE .800 [20.32] 16X ANODE 3 5 7 9 11 13 15 17 CL .145 [3.69]

1204 5a

Abstract: CYStech Electronics BTNA06N3
Contextual Info: Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application.

tr c216

Abstract: photodiode linear array 16 Photodiode-Array c216 PDB-C216
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 16 element Type PDB-C216 PACKAGE DIMENSIONS INCH [mm] CL C L ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 .305 [7.75] .062 [1.57] COMMON CATHODE .800 [20.32] 16X ANODE 3 5 7 9 11 13 15 17

C2163

Abstract: coev transformer
Contextual Info: C2163 Product Description REV B ADSL Line Coupling Transformer, 1mH, 2 : 1 Line : IC Meets requirements of IEC60950 for supplementary insulation, 250V working voltage EIA date code and lot code 0.700 MAX [17.78 MAX] COEV C2163 XXXXX 15.40±0.15 .606±.006

LMU16DM55

Abstract: LMU16GC65
Contextual Info: L M U 1 6 / 2 1 6 16 x 16-bit Parallel Multiplier DEVICES INCORPORATED FEATURES DESCRIPTION □ 20 ns Worst-Case Multiply Time □ Low Power CMOS Technology □ Replaces TRW M PY016/TM C216, Cypress CY7C516, IDT 7216L, and AMD Am29516 □ Two's Complement, Unsigned, or

tr c216

Abstract: scintillator c216 PDB-C216-C 9 ELEMENT photoDIODE ARRAY PDB-C216C
Contextual Info: PHOTONIC X-RAY, Silicon Photodiode Array, Photoconductive DETECTORS INC. with CsI(Ti scintillation crystals)Type PDB-C216-C PACKAGE DIMENSIONS INCH [mm] CL CL ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 3 .373 [9.47] .062 [1.57] .800 [20.32]

D2092

Abstract: EL17-21USRC D209 D2041 D2082 EL17-21USOC ATmega644-20AU D2072 xc200 SW200
Contextual Info: Q7' Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 LATCH R202 10K GND 1 GND 2 3 GND Programming for all on-board AVRs. 10N_16V_X7R GND 10N_16V_X7R C219 2 1 10N_16V_X7R C218 2 1 10N_16V_X7R C217 2 1 C216 1 10N_16V_X7R GND 10N_16V_X7R 1 V3P3 2 BLM21AG102SN1D C221 1 2 L200 GND B GND

Contextual Info: aTCA-9300 Intel Xeon® E3 Quad-Core 10 Gigabit Ethernet AdvancedTCA® Processor Blade Features AdvancedTCA Intel® Xeon® E3 Quad-Core or Core i3 Dual-Core Uniprocessor DDR3 1600/ECC memory up to 32 GB maximum capacity Intel® C216 chipset Single AMC.0 Mid-size bays

BC5468

Abstract: diode l 0607 2SA979 2SA958Y IN4I48 VR601 VR802 BC639-BC640 VR602 2SA1386AY
Contextual Info: W IRING DIAGRAM »OWER LAM P - 4 - ft J SPK TML f I 0Í VI CIRCUIT DIAGRAM 0627 06»! Q61S 0639 0643 2SC 3S19AYX 2 2>C216BY g.n» & 9 RGP10D 0607 NOTE: •CD 1 A l l RESISTOR ARE IN OHM 1/4W i 5V. CARBON UNLESS OTHERWISE SPECIFIED 1i86AYX2V 0603 2SA9 79 2 CAPACITANCE ARE IN pF UNLESS OTHERWISE SPECIFIED