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    PTFB191501E Search Results

    PTFB191501E Datasheets (5)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFB191501E
    Infineon Technologies 1800 MHz to 2000 MHz; Package: PG: H-36248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P1dB (typ): 150.0 W; Supply Voltage: 30.0 V Original PDF 289.43KB 15
    PTFB191501EV1
    Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 150W H36248-2 Original PDF 15
    PTFB191501EV1R250
    Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 150W H36248-2 Original PDF 15
    PTFB191501EV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 150W H36248-2 Original PDF 332.42KB
    PTFB191501EV1XWSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 150W H36248-2 Original PDF 332.42KB

    PTFB191501E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C205

    Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original
    ptfb191501eptfb191501f150-watth-36248-2+2h-37248-2c205 PDF

    tl2272

    Abstract: TL239 c104 TRANSISTOR MM380 tl241 445-1411-2-ND 3224W-202ECT-ND amplifier circuit diagram 20000 watt TL243 TRANSISTOR c104
    Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


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    ptfb191501eptfb191501f150-watth-36248-2+11h-37248-2tl2272tl239c104 transistormm380tl241445-1411-2-nd3224w-202ect-ndamplifier circuit diagram 20000 watttl243transistor c104 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original
    ptfa041501eptfa041501fptfa070601epg-dso-20-63+13pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2h-36260-2ptfa142401elptfa070601fptfa071701eptfa071701fptfa072401elptfa072401flptfa080551e PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original
    ptfa041501eptfa041501fptfa070601e725-7452fl+13pg-dso-20-63pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2ptfa220121mptfb241402fptfa070601fptfa071701eptfa071701fptfa072401elptfa072401fl PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original
    ptfa041501eptfa041501fpg-dso-20-63pg-rfp-10+15h-33265-8h-34265-8h-30260-2h-36260-2h-30265-2h-30248-2ptfb182503flptfa08150rf power transistorsptfa081501eptfa092213elptfbptfa211801eptfb182503ptfb192503 PDF