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Thomas & Betts CTL1-38 Cu Tp 1Hl Lug Shrtbrl 1 3/8B Grn \|Abb Thomas & Betts CTL1-38
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	CTL1-38	Bulk			20	1 - 10 - 100 $12.97 1000 $12.97 10000 $12.97	Buy Now
Master Electronics	CTL1-38					1 - 10 - 100 $10.71 1000 $9.72 10000 $9.72	Buy Now
Thomas & Betts ATL1-38 1 Al Tp Comp Lug 1Hl 3/8In Gold; \|Abb Thomas & Betts ATL1-38
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	ATL1-38	Bulk			1	1 $18.20 10 $17.55 100 $16.90 1000 $16.90 10000 $16.90	Buy Now
Master Electronics	ATL1-38					1 $24.87 10 $22.19 100 $19.76 1000 $19.23 10000 $19.23	Buy Now
GW Instek GTL-138 C1/C2/C3 Cable Kit Fro Asr-002; \|Gw Instek GTL-138
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GTL-138	Bulk			1	1 $175.00 10 $175.00 100 $175.00 1000 $175.00 10000 $175.00	Buy Now
Color-Keyed CTL1-38 COPPER ONE-HOLE LUG, 35KV, 1 STR. WIRE, 3/8 BOLT, TIN PLATED, DIE COLOR GREEN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	CTL1-38	Bulk			20	1 - 10 - 100 $10.88 1000 $9.46 10000 $9.46	Get Quote
Color-Keyed ATL1-38 LUG, 1 AL TP COMP LUG 1HL 3/8IN GOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ATL1-38	Bulk		4 Weeks	1	1 $29.38 10 $27.91 100 $27.03 1000 $27.03 10000 $27.03	Get Quote

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TL138 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4 tl205 +8tl2322 ro4350 tl233 tl241 587-1818-2-nd c201 017 c202 tl147	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +10h-34288-6 tl249 tl2472 tl244 transistor tl131 tl251 tl239 ptfb182503 tl250 tl242	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	ptva035002ev h-36275-4 a035002 50stances +4lm7805ach-nd tl174 tl173 ptva035002ev v1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +2c109 ceramic capacitor tl235	PDF
TRANSISTOR tl131 Abstract: tl239 Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	ptfb082817fh h-34288-4/2 transistor tl131 tl239	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 tl272 +9tl184 tl181 tl271 tl308 tl187 transistor tl274 tl293 tl193 tl148	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 tl145 tl245 +3transistor c111 c216 tl152	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	ptfb182503el ptfb182503fl 240-watt transistor tl131 +8ptfb192503 tl134 tl105b tl231 ptfb192503el v1 c103 transistor ro4350 tl117	PDF
TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt transistor tl131 +8tl134 tl127 tl234 tl107 tl117 atc100b6r2 tl227 c103 transistor data	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
PTFB212503FL Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
Contextual Info: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input	Original	ptfb182503el ptfb182503fl 240-watt h-33288-6 +1h-34288-4/2	PDF
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4	PDF
ATC100B6R2CT500X Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	ptfb213208fv ptfb213208sv 320-watt h-34275g-6/2 +10atc100b6r2ct500x tl230 tl235 tl156 tl247 c20210 atc100b100fw500x tl140 tl251 tl126	PDF

IC801 Abstract: transistor Q801 TRANSISTOR tl131 PTFB212503 cq801 PTFB212503FL TL239 q801 A157 TRANSISTOR c104 Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	ptfb212503el ptfb212503fl 240-watt h-33288-6 +10h-34288-6 ic801 transistor q801 transistor tl131 ptfb212503 cq801 tl239 q801 a157 transistor c104	PDF
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's	Original	ptfc260202fc 10-watt h-37248-4	PDF
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	ptfc260202fc 10-watt h-37248-4	PDF
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	ptfb183404e ptfb183404f 340-watt h-36275-8 +5h-37275-6/2 tl139 tl205 ptfb183404 transistor tl131	PDF
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 ptfb093608 tl2272 +7ptfb09360 tl258 tl103 application note tl131 transistor c104 tl249 tl145	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	ptfb201402fc h-37248-4 17ubstances tl272 +9tl271 tl274 5228 voltage regulator tl279 tl246 c221 transistor tl-250 tl2741 hd 1077 o	PDF
TL2012 Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221 Contextual Info: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier	Original	ptfb211503el ptfb211503fl 150-watt tl2012 +9transistor tl131 c801 c802 c803 r250 8c802 tl1252 tl1-16 atc 221	PDF
Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	ptfb183408sv 340-watt	PDF
TL235 Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081 Contextual Info: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz	Original	ptfb091507fh h-34288-4/2 16ubstances tl235 +6lm78l05acm-nd lm78l05acmnd ptfb091507 tl230 atc100b330jw500xb tl1081	PDF
TL244 Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	ptva035002ev h-36275-4 tl244 cw 7805 +8lm7805ach-nd tl173 tl235 tl138 tl251 tl148 tl170 tl134	PDF

TL138 Search Results

TL138 Price and Stock

Thomas & Betts CTL1-38

Thomas & Betts ATL1-38

GW Instek GTL-138

Color-Keyed CTL1-38

Color-Keyed ATL1-38

TL138 Datasheets Context Search

TL205

tl249

LM7805ACH-ND

C109 ceramic capacitor

TRANSISTOR tl131

TL272

TL145

TRANSISTOR tl131

TRANSISTOR tl131

TL139

PTFB212503FL

ATC100B6R2CT500X

IC801

TL139

PTFB093608

TL272

TL2012

TL235

TL244