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PTFB093608 Datasheets (8)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFB093608FVV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	813.57KB
PTFB093608FVV2S250XTMA1		Infineon Technologies	IC FET RF LDMOS H-362620-2	Original	PDF	377.62KB	3
PTFB093608FVV2XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	813.57KB
PTFB093608FV-V3-R0		Wolfspeed	FET RF 2CH 65V 960MHZ H-37275G-6	Original	PDF	377.62KB	3
PTFB093608FVV3R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 960MHZ H-37275G-6	Original	PDF	813.57KB
PTFB093608FV-V3-R2		Wolfspeed	FET RF 2CH 65V 960MHZ H-37275G-6	Original	PDF	377.62KB	3
PTFB093608FVV3R2XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 960MHZ H-37275G-6	Original	PDF	813.57KB
PTFB093608SVV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS	Original	PDF	847.59KB

PTFB093608 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 tl145 tl245 +3transistor c111 c216 tl152	PDF
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608fv h-37275-6/2 ptfb093608 tl2272 +7ptfb09360 tl258 tl103 application note tl131 transistor c104 tl249 tl145	PDF
TL250 Abstract: TL239 Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	ptfb093608fv h-34275g-6/2 tl250 tl239	PDF
Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	ptfb093608fv h-34275g-6/2	PDF
PTFB093608 Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143 Contextual Info: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	ptfb093608sv h-34275g-6/2 ptfb093608 32c216 +6c221 transistor tl251 tl250 transistor tl120 atc100b2r7bw500x tl143	PDF
PTFB090901EA Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	ptva093002tc 960mhz 758mhz pxac201602fc +62025mhz h-49248h-4 h-37248-4 400mhz 2700mhz ptfb090901ea	PDF