ATC100B2R7BW500X Search Results

ATC100B2R7BW500X Price and Stock

Filter by Manufacturer

Kyocera AVX Components


Kyocera AVX Components 100B2R7BW500XT Silicon RF Capacitors / Thin Film 500volts 2.7pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100B2R7BW500XT	Reel			500	1 - 10 - 100 - 1000 $2.98 10000 $2.94	Buy Now

ATC100B2R7BW500X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152	PDF
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145	PDF
TL250 Abstract: TL239 Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239	PDF
Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PTFB093608FV PTFB093608FV H-34275G-6/2	PDF
PTFB093608 Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143 Contextual Info: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608SV PTFB093608SV H-34275G-6/2 PTFB093608 32c216 c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143	PDF