DS120119 Search Results

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFVC9753 RFVC9753Low Phase Noise Voltage Controlled Oscillator 1680MHz to 1740MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1680MHz TO 1740MHz Package: MCM, 20-Pin, 6mm x 6mm Frequency and Power versus Voltage Control 1820 3.0 1800 -125dBc/Hz Typical at 100 kHz

LA1018

Contextual Info: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER Frequency Range 1850MHz to 2050MHz GND 2 Internally Matched to 50 on All RF Ports SCN 3 Analog Voltage Variable Attenuator with 3.3V Control

4G lte RF Transceiver

Abstract: RF transceiver LTE
Contextual Info: RFVC9753 RFVC9753Low Phase Noise Voltage Controlled Oscillator 1680MHz to 1740MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1680MHz TO 1740MHz Package: MCM, 20-Pin, 6mm x 6mm Frequency and Power versus Voltage Control 1820 3.0 1800 POUT 0dBm Typical 